Studies on Electric Field Induced Resistance Switching in Binary Transition Metal Oxides
| Project/Area Number |
22760519
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Osaka University (2011-2012)
The Institute of Physical and Chemical Research (2010) |
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Principal Investigator |
FUJIWARA Kohei 大阪大学, 産業科学研究所, 助教 (50525855)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 酸化物エレクトロニクス / 抵抗変化メモリー / 酸化還元 / 酸化物デバイス / ナノワイヤ / 光電子分光 / 電荷秩序 / 遷移金属酸化物 / 半導体物性 |
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| Research Abstract |
The mechanism of voltage-induced resistance switching observed in transition metal oxides has been studied. To evaluate changes in the chemical state of the switching material, we fabricated a transition metal nanowire device, which enables us to probe the chemical state using various surface analysis methods. 3D nano-ESCA experiments revealed that the redox reactions of transition metal-e.g., the oxidation of Ni to NiO and the re-reduction to Ni-give rise to the reversible alternation of the resistance state.The resistance switching device may therefore be considered as an electrochemical phase change memory.
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Report
(4 results)
Research Products
(29 results)
