| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Research Abstract |
The mechanism of voltage-induced resistance switching observed in transition metal oxides has been studied. To evaluate changes in the chemical state of the switching material, we fabricated a transition metal nanowire device, which enables us to probe the chemical state using various surface analysis methods. 3D nano-ESCA experiments revealed that the redox reactions of transition metal-e.g., the oxidation of Ni to NiO and the re-reduction to Ni-give rise to the reversible alternation of the resistance state.The resistance switching device may therefore be considered as an electrochemical phase change memory.
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