gas-surface reaction in sputtering process for transparent conductive oxide
| Project/Area Number |
22760561
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | Meijo University (2011)
Wakayama University (2010) |
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Principal Investigator |
OHTA Takayuki 名城大学, 理工学部, 准教授 (10379612)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | プラズマ / スパッタリング / 透明導電膜 / 吸収分光 / 表面反応 |
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| Research Abstract |
Sputtering processes have been widely used as thin film deposition in various fields. In this study, we focused on Indium-zinc-oxide(IZO) and Gallium doped zinc-oxide(GZO) as transparent conductive oxide and investigated gas phase. surface reaction. We monitored In and Zn densities and clarified the relation between radical composition, film composition, and electrical property such as resistivity, carrier density and mobility.
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Report
(3 results)
Research Products
(25 results)
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[Journal Article] Line-Profiles and Translational Temperatures of Pb Atoms in Multi-micro Hollow Cathode Lamp Measured by Diode Laser Absorption Spectroscopy2012
Author(s)
Mari Inoue, Takayuki Ohta, Naoki Takota, Shigeki Tsuchitani, Masafumi Ito, Seigo Takashima, Hiroyuki Kano, Koji Yamakawa, Keigo Takeda, and Masaru Hori
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Journal Title
Jpn. J, Appl. Phys
Volume: (印刷中)
NAID
Related Report
Peer Reviewed
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