Application of the inverse current induced magnetization switching phenomena for novel electronics device

• Project/Area Number: 22810021
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Microdevices/Nanodevices
• Research Institution: Fukushima National College of Technology
• Principal Investigator: ISOGAMI Shinji 福島工業高等専門学校, 一般教科, 准教授 (10586853)
• Project Period (FY): 2010 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥3,003,000 (Direct Cost: ¥2,310,000、Indirect Cost: ¥693,000); Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2010: ¥1,573,000 (Direct Cost: ¥1,210,000、Indirect Cost: ¥363,000)
• Keywords: 窒化鉄 / スピン / 磁性 / 電流誘起磁化反転 / 磁気抵抗効果 / 磁気緩和 / 強磁性共鳴 / スピントロニクス / インバース電流誘起磁化反転 / スピントルクトランスファー / 強磁性トンネル接合膜

Research Abstract

Inverse current induced magnetization switching phenomena is not fully understood by conventional spin torque theory showing that the spin torque direction is determined by the spin polarization of the pinned layer. It might be due to the spin polarization of the free layer as well. Using ferro-magnetic resonance technique, the damping factor of Fe4N thin film is found to be 0.007.Using the same technique, the spin pumping effect of Fe_4N system is enhanced comparing to that of Fe system. It is concluded that such the enhancement reflects the minority-spin conduction in Fe_4N film.

Research Products

• [Journal Article] Soft X-ray Magnetic Circular Dichroism of a CoFe/MnIr Exchange Bias Film under Pulsed High Magnetic Field (2011)
  • Author(s): Tetsuya Nakamura, Yasuo Narumi, Toko Hirono, Misaki Hayashi, Kenji Kodama, Masakiyo Tsunoda, Shinji Isogami, Hirokazu Takahashi, Toyohiko Kinoshita, Koichi Kindo, Hiroyuki Nojiri
  • Journal Title: Applied Physics Express Volume: 4 Issue: 6 Pages: 066602-066602
  • DOI: 10.1143/apex.4.066602
  • Peer Reviewed
• [Journal Article] Inverse current induced magnetization switching in magnetic tunnel junction with Fe_4N free layer (2010)
  • Author(s): Shinji Isogami, Masakiyo Tsunoda, Yousuke Komasaki, Akimasa Sakuma, and Migaku Takahashi
  • Journal Title: Applied Physics Express Volume: 3 Issue: 10 Pages: 103002-103002
  • DOI: 10.1143/apex.3.103002
  • NAID: 10027441315
• [Journal Article] Fe_4Nフリー層を有する強磁性トンネル接合のインバース電流誘起磁化反転 (2010)
  • Author(s): 磯上慎二
  • Journal Title: Applied Physics Express誌(応用物理学会) Volume: 3
  • Peer Reviewed
• [Presentation] 負のスピン分極率を有するFe4N薄膜の磁気緩和定数 (2012)
  • Author(s): 磯上慎二,角田匡清,大兼幹彦,佐久間昭正,高橋研
  • Organizer: 第2回共同プロジェクト研究会
  • Place of Presentation: 東北大学電気通信研究所
  • Year and Date: 2012-02-21
• [Presentation] 負のスピン分極率を有するγ'-Fe_4N薄膜の磁気緩和定数 (2011)
  • Author(s): 磯上慎二, ら
  • Organizer: 日本磁気学会
  • Place of Presentation: 朱鷺メッセ(新潟市)
  • Year and Date: 2011-09-28
• [Presentation] 負のスピン分極率を有するFe4N薄膜の磁気緩和定数 (2011)
  • Author(s): 磯上慎二,角田匡清,大兼幹彦,佐久間昭正,高橋研
  • Organizer: 第35回日本磁気学会学術講演会
  • Place of Presentation: 新潟
  • Year and Date: 2011-09-27
• [Presentation] γ'-Fe4N強磁性電極を有する強磁性トンネル接合のインバース電流誘起磁化反転 (2010)
  • Author(s): 磯上慎二,角田匡清,駒崎洋亮,佐久間昭正,高橋研
  • Organizer: 東北大学電気通信研究所第1回共同プロジェクト研究会
  • Place of Presentation: 仙台
  • Year and Date: 2010-09-29
• [Presentation] Fe4N/MgO/CoFeB-MTJのインバース電流誘起磁化反転 (2010)
  • Author(s): 磯上慎二,角田匡清,駒崎洋亮,佐久間昭正,高橋研
  • Organizer: 第34回日本磁気学会学術講演会
  • Place of Presentation: つくば
  • Year and Date: 2010-09-04
• [Presentation] γ'-Fe_4N強磁性電極を有する強磁性トンネル接合のインバース電流誘起磁化反転 (2010)
  • Author(s): 磯上慎二
  • Organizer: 日本磁気学会
  • Place of Presentation: つくば国際会議場(茨城県)
  • Year and Date: 2010-09-04