Metal-insulator transition in strongly correlated diluted electron systems of high-mobility zinc oxide two-dimensional interfaces
| Project/Area Number |
22840004
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics I
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KOZUKA Yusuke 東京大学, 大学院・工学系研究科, 助教 (70580372)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2011: ¥1,495,000 (Direct Cost: ¥1,150,000、Indirect Cost: ¥345,000)
Fiscal Year 2010: ¥1,625,000 (Direct Cost: ¥1,250,000、Indirect Cost: ¥375,000)
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| Keywords | 酸化物薄膜 / 金属絶縁体転移 / 量子ホール効果 / 強相関電子 / 強相関電子系 |
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| Research Abstract |
Our aim is to observe a metal-insulator transition in two-dimensional electrons in zinc oxide by measuring electrical resistance. At ultralow temperature, by applying high magnetic field, we observed an abrupt increase in the electrical resistance, suggesting a metal-insulator transition. However, Hall resistance, which reflects carrier density, remains normal across the resistance increase. Thus, we found that a characteristic state in high-mobility diluted carrier systems is realized, which is called quantum Hall insulator
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Report
(3 results)
Research Products
(19 results)
