Sensoron: Fusing Memory and Computing into Spintronics-based Sensors
Project/Area Number |
22H01538
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Review Section |
Basic Section 21060:Electron device and electronic equipment-related
|
Research Institution | Tohoku University |
Principal Investigator |
アルマダウィ ミフタ 東北大学, 先端スピントロニクス研究開発センター, 助教 (90729576)
|
Co-Investigator(Kenkyū-buntansha) |
大兼 幹彦 東北大学, 工学研究科, 教授 (50396454)
野崎 友大 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員 (10610644)
|
Project Period (FY) |
2022-04-01 – 2025-03-31
|
Project Status |
Granted (Fiscal Year 2023)
|
Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2023: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2022: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
|
Keywords | スピントロニクス / センサ / spintronics / sensor / memory / Spintronics / Sensing / Computing |
Outline of Research at the Start |
New information processing techniques are needed for Internet-of-Things (IoT) applications. The spintronic-based reservoir computing (RC) have many merits compared to other PRC systems: the compatibility with semiconductor large-scale integration, long endurance, and sensing capability. State variables of ferro- and antiferro-magnetism in spintronic devices offer a strong advantage for nonlinear dynamics, non-volatility, and low-power operation. Additionally, magnetic spintronic sensors can directly interface with many applications from automotive to biomedical domains.
|
Outline of Annual Research Achievements |
We investigated possibilities of Reservoir Computing in the physical systems of: ① ferro-magnetic magnetic tunnel junction (MTJ) sensors, and ② magneto-electric (ME) memories. In topic ①, we developed the measurements for the response of MTJ sensors using a novel method for hybrid VSM/ac susceptometer. Also we developed large-scale simulations for characterizing the dynamics of collective MTJ sensors. In topic ②, we developed world-leading quality of Pt/Cr2O3 thin-film devices. Also, we demonstrated a large anomalous Hall effect signal, which opens the way for reading the internal memory state of Cr2O3 antiferromagnetic domains.
|
Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
A lot of time and resources were spent on preparing the requirements of research. The challenges were: time to acquire deposition targets, Cr2O3 sample preparation requires a long time, optimizing growth conditions, and long simulation time. We are planning on upgrading our capacity to increase the progress speed. We working on more streamlined simulations and sample preparations. We are also outsourcing the circuit board fabrication to an external manufacturer, which will make us focus on design and evaluation.
|
Strategy for Future Research Activity |
In the FY2023, we will start investigating the short-term memory and nonlinear operation of MTJ and ME memories. We will test using external and internal feedback to implement the short-term memory. In the MTJ Sensoron branch, We will continue on demonstrating the memory storing capacity in MTJ sensor dot arrays. We will combine energy-storing elements, such as coils and capacitors, in the feedback loop, to investigate nonlinear dynamics. We will also investigate the memory dynamics of other topological features in MTJ sensors, the vortex state and vortex-antivortex pairs. In the ME Sensoron branch, we will investigate the electric-modulation of ME states using spin-orbit torque (SOT) control. We will challenge if our devices can separate between similar temporal patterns.
|
Report
(1 results)
Research Products
(1 results)