| Project/Area Number |
22K04885
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 28030:Nanomaterials-related
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
J. Wipakorn 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主任研究員 (40748216)
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| Project Period (FY) |
2022-04-01 – 2025-03-31
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| Project Status |
Granted (Fiscal Year 2023)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2024: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2023: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2022: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | Nanowire / Nanostructure / Vapor-liquid-solid / CVD / Aluminum / Silicon / Nanowires / Germanium / Heterojunction |
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| Outline of Research at the Start |
The study of hole-gas accumulation for HEMT applications on Si/Ge core-shell NW heterostructures using Al as a catalyst for core SiNW synthesis is the main research purpose. The bottom-up approach of the VLS growth using a CVD system is a key research method. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs suggest the major advantages for the application of vertical SiNW-based HEMT devices. The hole gas accumulation in core-shell NWs will be examined by Raman measurement and the fitting to the Fano equation.
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| Outline of Annual Research Achievements |
Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were continuously investigated.
The vertically aligned Al-catalyzed SiNWs with smooth surfaces and single crystalline properties while addressing the issue of metal catalyst contamination have successfully proven the notable advantage of Si/Ge heteroarchitectures in their ability to enhance hole gas accumulation through bandgap engineering design. Various p-Si/i-Ge core-shell heterostructures with the addition of intermediate or/and outermost B-doped p+-Si shell were investigated to maximize hole gas accumulation in the Ge channel layer, with a focus on monitoring their core-shell structures, interfaces, and crystalline properties.
Exploring the physical and optical properties of nanodots at both room and low temperatures for photovoltaic applications has contributed to a deeper understanding of functionalization techniques aimed at enhancing SiNW-based solar cells.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
The studies on exploring the functionality of Al-catalyzed SiNWs were well-progressed as explained in the research achievement part. The experiments on sample preparations and characterizations could smoothly proceed following the research plan. The laboratory consumables and facilities could be provided without any trouble.
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| Strategy for Future Research Activity |
In this fiscal year, the experimental results will be continuously presented. More manuscripts will be submitted for publication. Extended investigation on Al-catalyzed SiNW size and position controls including the interface passivation for double-hetero Si/Ge core-shell NW structures and their effects on hole-gas accumulation will be elucidated. Various nanodots for photovoltaic applications will be observed in their physical and optical properties to enhance Al-catalyzed SiNW-based solar cells.
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