ウルツ鉱型半導体の力学特性に及ぼす光環境効果の実験的計測とメカニズム解明
| Project/Area Number |
22K14143
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 18010:Mechanics of materials and materials-related
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| Research Institution | Osaka University |
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Principal Investigator |
LI YAN 大阪大学, 大学院基礎工学研究科, 助教 (70930171)
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| Project Period (FY) |
2022-04-01 – 2024-03-31
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| Project Status |
Granted (Fiscal Year 2022)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2023: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2022: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | Photoindentation / compound semiconductors / oxides / crystal plasticity / dislocations / ウルツ鉱型結晶 / 力学特性 / 転位 |
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| Outline of Research at the Start |
The influence of light illumination on the mechanical properties of semiconductors has drawn increasing attention recently. Research on ZnS has demonstrated large plasticity in complete darkness. Extending research to other materials will open up the possibility of tuning material properties by controlling the light environment. In this research, we will study the effects of light on different slip systems in wurtzite crystals, which will greatly contribute to innovating the processing methods for modifying the plasticity of brittle materials.
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| Outline of Annual Research Achievements |
This project aims to elucidate how light affects the mechanical properties of wurtzite semiconductors. Many advanced semiconductor compounds, such as GaN and ZnO, possess wurtzite structure, which consists of two individual hexagonal close-packed sublattices. In FY2022, our studies mainly focused on wurtzite ZnO, a representative third-generation semiconductor material. Photoindentation technique, i.e., in-situ nanoindentation experiments with a controllable light illumination system, was adopted to evaluate the mechanical responses at the nanoscale under different light conditions. Three types of photoindentation experiments were applied on two ZnO single crystals with different orientations. Low-load indentation pop-in tests were performed to investigate the light effects on dislocation nucleation. Middle-load quasi-indentation tests were conducted to verify the photo-hardening effects of different orientations. High-load indentation creep tests were carried out to study the influence of light on dislocation multiplication and motion along different slip planes. It was found that light only shows a slight influence on the dislocation nucleation event, but significantly affects dislocation motion.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
So far, we have studied the influence of light on different slip system in wurtzite ZnO single crystals at the nanoscale using photoindentation technique. Related results have been published in journals and reported at domestic and international conferences. Therefore, we think the project is progressing rather smoothly.
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| Strategy for Future Research Activity |
In FY2023, we will continue to evaluate the effects of light on different slip systems in wurtzite semiconductors. Transmission electron microscopy will be adopted to visualize the light influence on dislocation behaviors. Meanwhile, we will prepare papers on the research results of FY2022, and submit them in mid FY2023.
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Report
(1 results)
Research Products
(5 results)
