Atomic structure elucidation and modulation for Al2O3/diamond interface

• Project/Area Number: 22K14287
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Kanazawa University
• Principal Investigator: 張 旭芳 金沢大学, ナノマテリアル研究所, 特任助教 (30857404)
• Project Period (FY): 2022-04-01 – 2023-03-31
• Project Status: Discontinued (Fiscal Year 2022)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2024: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2023: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2022: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: diamond / Al2O3 / interface / Interface

Outline of Research at the Start

I will explore Al2O3/diamond interface atomic structure by XPS and ESR measurements, combining with first-principles calculation. Then, I will develop surface treatments and PDA techniques to modulate interface atomic structures, and to reduce Dit and enhance channel mobility of diamond MOSFETs.

Outline of Annual Research Achievements

We focused on the Al2O3/diamond interface by modulating the pre-wet treatment times before the ALD process. We found that the sample without wet annealing treatment shows large Dit, in the order of 1012~1013 cm－2eV－1. Dit is reduced by one order of magnitude lower when wet annealing treatments were performed. Dit has no significant change with increasing wet annealing treatments. The sample with annealing for 3h shows lower Dit in the relatively deep energy position.

Research Products

• [Presentation] Impact of wet annealing treatments on Al2O3/diamond MOS interface (2022)
  • Author(s): X. Zhang, T. Matsumoto , M. Sometani, M. Ogura, T. Makino, D. Takeuchi, C.E. Nebel, T. Inokuma, S. Yamasaki, and N. Tokuda
  • Organizer: New Diamond and Nano Carbons 2022
  • Int'l Joint Research
• [Presentation] Recent Progress in Electrical Characterization of Al2O3/Diamond Interface (2022)
  • Author(s): X. Zhang, T. Matsumoto , M. Sometani, M. Ogura, T. Makino, D. Takeuchi, C.E. Nebel, T. Inokuma, S. Yamasaki, and N. Tokuda
  • Organizer: 14th Topical Workshop on Heterostructure Microelectronics
  • Int'l Joint Research / Invited
• [Presentation] Electrical characterization of Al2O3/diamond MOS interface under various wet-annealing times (2022)
  • Author(s): X. Zhang, T. Matsumoto , M. Sometani, M. Ogura, T. Makino, D. Takeuchi, C.E. Nebel, T. Inokuma, S. Yamasaki, and N. Tokuda
  • Organizer: The 83rd JSAP Autumn Meeting 2022