Encapsulated free-standing-like silicene: towards next generation two-dimensional silicon-based electronics
| Project/Area Number |
22K18940
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| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
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| Allocation Type | Multi-year Fund |
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| Review Section |
Medium-sized Section 28:Nano/micro science and related fields
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)
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| Project Period (FY) |
2022-06-30 – 2025-03-31
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| Project Status |
Granted (Fiscal Year 2022)
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| Budget Amount *help |
¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2024: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2023: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2022: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
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| Keywords | silicene / exfoliation / h-BN / free-standing / teflon tape |
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| Outline of Research at the Start |
The different steps of the research project are as follow:
1. Verifying the possibilty of growing good quality intercalated silicene sheets on zirconium diboride thin films on SOI.
2. Transferring the h-BN/silicene/ZrB2 sandwiches from SOI to a flexible substrate such as scotch tape.
3. Removing the ZrB2 thin film below silicene and replacing it by a h-BN terminated flexible plastic film.
4. Verifying that the structural quality of the silicene sheet is preserved. The possiblity of patterning electrodes in the ZrB2 thin films by means of e-beam lithography will also be determined.
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| Outline of Annual Research Achievements |
The patterning of zirconium diboride thin film by e-beam lithography was investigated by means of various techniques.
These characterizations pointed out that phosphoric acid (H3PO4) is a suitable etchant compared to other usual etchants like HF. However etching
at room temperature was found to be slow and to give rise to overetching below the edges of the photoresist. This investigation demonstrates that good quality silicene can be produced after this process. It gives precious
insights into the dimensions and the aspect ratio of the silicene pieces that can be produced by this proposed electron beam-based lithography method.
The investigations of methods for the exfoliation and the transfer of SOI membranes from tape to tape without causing contamination were also succesfully conducted.
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| Current Status of Research Progress |
Current Status of Research Progress
3: Progress in research has been slightly delayed.
Reason
The project did not progress as initially planned, though this will have no consequence on the realization of the project. I had to give priority to the finalization of previous research projects and to job hunting. My contract in my current affiliation will eventually come to an end and the success of the project implies finding a position in a research institution.
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| Strategy for Future Research Activity |
The objective of the next year is to establish the conditions permitting the fabrication of silicene sheets sandwiched between two h-BN sheets.
This includes the implementation of the nitrogen plasma source on the ultra high vacuum system dedicated to the growth of zirconium diboride thin films in order to realize large scale h-BN-encapsulated silicene sheets that can be transfered to tape.
Etching conditions of the silicon membrane of SOI substrates and of the ZrB2 thin films grown on the membranes will also be investigated next year. These two steps are required to chemically exfoliate h-BN-encapsulated silicene sheets grown on ZrB2.
Commercial h-BN sheets on cupper foils will be purchased, and their exfoliation in a vacuum glove box through taping on teflon tape will be attempted.
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Report
(1 results)
Research Products
(1 results)
