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Lowering strong coercive electric field of ferroelectric nitrides through utilization of the charged interfaces

Research Project

Project/Area Number 22K20427
Research Category

Grant-in-Aid for Research Activity Start-up

Allocation TypeMulti-year Fund
Review Section 0302:Electrical and electronic engineering and related fields
Research InstitutionTokyo Institute of Technology

Principal Investigator

Okamoto Kazuki  東京工業大学, 物質理工学院, 助教 (60965937)

Project Period (FY) 2022-08-31 – 2024-03-31
Project Status Completed (Fiscal Year 2023)
Budget Amount *help
¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2023: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2022: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywords強誘電体 / 窒化物 / 分極反転 / 積層膜 / 薄膜 / 積層構造
Outline of Research at the Start

本研究の目的は極性界面に誘起・促進された動力学的な分極反転により窒化物強誘電体の「強固な抗電界を低減」を実現することである。すでに圧電材料として社会実装されているAlN基強誘電体の低電圧駆動可能な次世代強誘電体メモリ材料としての可能性を開拓及び発展を目指す。AlN基窒化物強誘電体を用いて積層構造を作製し、人工的な極性界面の制御と通して分極反転の動力学的過程・反転挙動の理解を深める。

Outline of Final Research Achievements

Epitaxially grown single layer films and multiple layer stacked films were fabricated and their polarization switching behaviours were characterized to achieve lowering high coercive electric field in ferroelectric nitrides. It was revealed that the average compositional ratio of dopant Sc in multiple layer stacked films played an important role in polarization switching behaviour. The study provides important insight of polarization switching behaviour of ferroelectric nitrides.

Academic Significance and Societal Importance of the Research Achievements

現在、AlN基窒化物強誘電体はすでに圧電材料として社会実装されており、強誘電体メモリに用いる候補材料として特に注目されているウルツ構造型窒化物強誘電体の一つである。AlN基窒化物強誘電体は高い残留分極値を示す一方で高い強固な抗電界Ecを示し、これが課題となっている。本研究では、単層膜と積層膜の分極反転挙動の調査を行い、それらの設計指針として重要な分極反転過程の理解を深める知見を得ることができた。

Report

(3 results)
  • 2023 Annual Research Report   Final Research Report ( PDF )
  • 2022 Research-status Report
  • Research Products

    (12 results)

All 2024 2023 2022

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (10 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] Scalable ferroelectricity of 20?nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes2023

    • Author(s)
      Ota Reika、Yasuoka Shinnosuke、Mizutani Ryoichi、Shiraishi Takahisa、Okamoto Kazuki、Kakushima Kuniyuki、Koganezawa Tomoyuki、Sakata Osami、Funakubo Hiroshi
    • Journal Title

      Journal of Applied Physics

      Volume: 134 Issue: 21 Pages: 214103-214103

    • DOI

      10.1063/5.0166288

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature2023

    • Author(s)
      Yasuoka Shinnosuke、Mizutani Ryoichi、Ota Reika、Shiraishi Takahisa、Shimizu Takao、Okamoto Kazuki、Uehara Masato、Yamada Hiroshi、Akiyama Morito、Funakubo Hiroshi
    • Journal Title

      Applied Physics Letters

      Volume: 123 Issue: 20 Pages: 202902-202902

    • DOI

      10.1063/5.0171108

    • Related Report
      2023 Annual Research Report
    • Peer Reviewed
  • [Presentation] Effect of gas annealing on the ferroelectric property of (Al0.8Sc0.2)N thin film2024

    • Author(s)
      Nana Sun,Kazuki Okamoto,Shinnosuke Yasuoka,Naoko Matsui,Toshikazu Irisawa,Koji Tsunekawa,Hiroshi Funakubo
    • Organizer
      第62回セラミックス基礎科学討論会
    • Related Report
      2023 Annual Research Report
  • [Presentation] High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films2024

    • Author(s)
      Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Soshun Doko and Hiroshi Funakubo
    • Organizer
      第71回応用物理学会春季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Ga添加によるAlNへのSc固溶量の増加とその強誘電性および圧電性への影響2024

    • Author(s)
      大田怜佳、安岡慎之介、中村美子、岡本一輝、原浩之、正能大起、上岡義弘、召田雅実、舟窪浩
    • Organizer
      第71回応用物理学会春季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] 種々の組成の(Al, Sc)N多層膜のスイッチング特性評価2023

    • Author(s)
      安岡慎之介、岡本一輝、清水荘雄、松井尚子、入澤寿和、恒川孝二、舟窪浩
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Related Report
      2023 Annual Research Report
  • [Presentation] Crystal structure and electrical properties of (Al, Ga, Sc)N temary thin films prepared by RF sputtering2023

    • Author(s)
      Kazuki Okamoto, Reika Ota, Shinnosuke Yasuoka, Yoshihiro Ueoka, Yoshiro Kususe, Masami Mesuda, and Hiroshi Funakubo
    • Organizer
      36th International Microprocesses and Nanotechnology Conference
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ferroelectric Property Improvement of (Al1-x-yGaxScy)N Ternary Thin Films2023

    • Author(s)
      Reika Ota, Shinnosuke Yasuoka, Kazuki Okamoto, Yoshihiro Ueoka, Yoshiro Kususe, Masami Mesuda, Hiroshi Funakubo
    • Organizer
      2023 MRS Fall Meeting & Exhibit
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of Ferroelectric Switching Properties for (Al,Sc)N Films with Various Composition2023

    • Author(s)
      Shinnosuke Yasuoka, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo
    • Organizer
      2023 MRS Fall Meeting & Exhibit
    • Related Report
      2023 Annual Research Report
    • Int'l Joint Research
  • [Presentation] NbN電極上に作製したエピタキシャル(Al,Sc)N膜の電気特性評価2023

    • Author(s)
      安岡慎之介, 大田怜佳, 岡本一輝, 石濱圭佑, 清水荘雄, 舟窪浩
    • Organizer
      第70回応用物理学会 春季学術講演会
    • Related Report
      2022 Research-status Report
  • [Presentation] 水素ガス熱処理が(Al,Sc)N薄膜の強誘電特性へ及ぼす影響2022

    • Author(s)
      岡本一輝, 安岡慎之介, 大田怜佳, 舟窪浩, 松井尚子, 入澤寿和, 恒川孝二
    • Organizer
      第83回応用物理学会 秋季学術講演会
    • Related Report
      2022 Research-status Report
  • [Presentation] メモリ応用に向けた(Al,Sc)N 膜の薄膜化の検討2022

    • Author(s)
      安岡慎之介, 大田怜佳, 岡本一輝, 石濱圭佑, 清水荘雄, 角嶋邦之, 上原雅人, 山田浩志, 秋山守人, 小金澤智之, L. S. Kumara, O. Seo, 坂田修身, 舟窪浩
    • Organizer
      第83回応用物理学会 秋季学術講演会
    • Related Report
      2022 Research-status Report

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Published: 2022-09-01   Modified: 2025-01-30  

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