| Project/Area Number |
22KF0070
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| Project/Area Number (Other) |
21F21364 (2021-2022)
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Multi-year Fund (2023)
Single-year Grants (2021-2022) |
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| Section | 外国 |
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| Review Section |
Basic Section 19020:Thermal engineering-related
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| Research Institution | The University of Tokyo |
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Principal Investigator |
丸山 茂夫 東京大学, 大学院工学系研究科(工学部), 教授 (90209700)
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| Co-Investigator(Kenkyū-buntansha) |
FENG YA 東京大学, 大学院工学系研究科(工学部), 外国人特別研究員
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| Project Period (FY) |
2023-03-08 – 2024-03-31
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| Project Status |
Completed (Fiscal Year 2023)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2023: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2022: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2021: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | SWCNTs / BNNT / 1D vdW heterostructure / TEM / thermal transport / Raman spectroscopy / tensile strain / Raman / 1D heterostructures |
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| Outline of Research at the Start |
Optimization of the special substrate fabrication and the material growth conditions to produce the three-layer van der Waals heterostructure nanotubes for device applications. Examining the fine structure and properties of the target nanotubes by TEM and Raman spectroscopy. Studying their working mechanism in opto/electronic applications.
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| Outline of Annual Research Achievements |
To form the individual heterostructure nanotube, we found that the CVD process could induce tensile strain in the suspended SWCNT, and resultantly the thermal conductivity of the SWCNT was enhanced by this uniaxial strain enabled by BNNT anchoring, which is the first experimental study to show the relation of the axial strain and the thermal conductivity of SWCNT. This implies that thermal-conductivity adjustable SWCNT materials could be fabricated making the best of this property. Besides, the efficiency of boron nitride coating on macroscopic SWCNT thin film has been evaluated by various optical spectroscopy, to provide important information about the heterostructure nanotubes. The electronic device applications of the heterostructure nanotubes are studies expensively, and the results will be published in the future. Therefore, the primary goals of the research plan are fulfilled as expected.
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