Project/Area Number |
22KJ0239
|
Project/Area Number (Other) |
22J11167 (2022)
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Research Category |
Grant-in-Aid for JSPS Fellows
|
Allocation Type | Multi-year Fund (2023) Single-year Grants (2022) |
Section | 国内 |
Review Section |
Basic Section 21060:Electron device and electronic equipment-related
|
Research Institution | Tohoku University |
Principal Investigator |
LIU ZHEN 東北大学, 工学研究科, 特別研究員(DC2)
|
Project Period (FY) |
2023-03-08 – 2024-03-31
|
Project Status |
Completed (Fiscal Year 2023)
|
Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2023: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2022: ¥900,000 (Direct Cost: ¥900,000)
|
Keywords | Energy harvesting / optical retenna / MIM diode / High rectification / Optical rectenna / Tunnel diode / Nanoparticles / Electric field |
Outline of Research at the Start |
The mid-infrared and terahertz range is still an unexplored area for energy harvesting technology. Optical rectenna, comprising a specially designed rectenna and a tunneling diode, has demonstrated potential for infrared energy conversion. This research’s goal is to create a high performance tunnel diode for optical rectenna, and then integrates with the novel deigned antenna to absorb the infrared light for practical power generations.
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Outline of Annual Research Achievements |
The target of this study is to create a high-performance metal-insulator-metal (MIM) diode for optical rectenna system to realize infrared radiation energy harvesting. During this study, the progress mainly included 3 parts:
1. Establish a design framework for materials combination of MIM diode based on photon-assisted-tunneling. Aiming to achieve the most effective energy harvesting and maximize the utilization of photon energy. 2. Development of rectification performance improved 231 times MIM diode with nanoparticles (NPs) for near infrared thermal radiation. Design and fabricate the MIM diode with metallic NPs to achieve the electrical field concentration effect in tunneling layer. 3. Establish a detailed analytical model for electron tunneling with MIM diode by considering comprehensive effect including materials properties and geometric changes.
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