| Project/Area Number |
22KJ2092
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| Project/Area Number (Other) |
21J22520 (2021-2022)
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Multi-year Fund (2023)
Single-year Grants (2021-2022) |
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| Section | 国内 |
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| Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
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| Research Institution | Osaka University |
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Principal Investigator |
Harfah Halimah 大阪大学, 基礎工学研究科, 特別研究員(DC1)
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| Project Period (FY) |
2023-03-08 – 2024-03-31
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| Project Status |
Completed (Fiscal Year 2023)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2023: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2022: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2021: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | magnetic tunnel junction / 2D materials / monoatomic vacancy / spintronics / hexagonal boron nitride / graphene (Gr) / localized state / spin coupling / vacancy / magnetic proximity / neuromorphic device / magnetoresistance (MR) / proximity effect / optical-based MTJ / new MTJ mechanism |
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| Outline of Research at the Start |
Research on exploring and designing a neuromorphic device based on 2D materials magnetic tunnel junction is proposed. The 2D materials such as graphene and hBN have unique physical and chemical properties when doping or a vacancy occur. One of the example is the appearance of localized state. A neuromorphic device by utilizing and controlling the localized state of the doped or defected 2D materials to create a multi-level memory state are expected to be the the outcome. This result will be an insight to create in-materio synapses weight based on 2D materials based MTJ.
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| Outline of Annual Research Achievements |
The study on vacancies in 2D materials impacting magnetic tunnel junction (MTJ) device performance has progressed significantly. Utilizing density functional theory (DFT), monoatomic vacancies in hexagonal boron nitride (hBN) and graphene layers were investigated. Vacancies were found to create distinct transmission channels for spin-majority and spin-minority channels, influenced by the proximity effect and vacancy layer's localized state.
A novel van der Waals-based MTJ design was proposed, comprising hBN(VB)/Graphene(Gr)/hBN(VB) with strategically positioned monoatomic vacancies. Non-equilibrium Green's function (NEGF) simulations, coupled with DFT data, showed a TMR ratio of approximately 400%, marking a significant advancement in thin structure MTJs. This design underscores the potential of defective 2D materials in enhancing magnetic random-access memory (MRAM) devices and optimizing neuromorphic devices.
The research reveals the intricate relationship between vacancies in 2D materials and MTJ device performance, offering new avenues for device optimization. The proposed MTJ design with monoatomic vacancies demonstrates remarkable potential for improving TMR ratios and advancing MRAM devices, highlighting the importance of defective 2D materials in next-generation electronic and magnetic devices. Furthermore, the engineering of the vacancy opens up the possible application of 2D materials MTJ as a potential neuromorphic device.
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