| Budget Amount *help |
¥539,110,000 (Direct Cost: ¥414,700,000、Indirect Cost: ¥124,410,000)
Fiscal Year 2015: ¥53,040,000 (Direct Cost: ¥40,800,000、Indirect Cost: ¥12,240,000)
Fiscal Year 2014: ¥90,870,000 (Direct Cost: ¥69,900,000、Indirect Cost: ¥20,970,000)
Fiscal Year 2013: ¥101,140,000 (Direct Cost: ¥77,800,000、Indirect Cost: ¥23,340,000)
Fiscal Year 2012: ¥160,420,000 (Direct Cost: ¥123,400,000、Indirect Cost: ¥37,020,000)
Fiscal Year 2011: ¥133,640,000 (Direct Cost: ¥102,800,000、Indirect Cost: ¥30,840,000)
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| Outline of Final Research Achievements |
By introducing magnetic atoms and materials into semiconductor materials and devices, we have successfully created new ferromagnetic semiconductors and ferromagnet/semiconductor hybrid structures to utilize not only charge transport of carriers but also spin degrees of freedom, and have realized a variety of new functionalities. Using these materials, we have designed and fabricated new semiconductor spintronics devices, in particular spin transistors, with spin-related functions, and have proved their device operation principles. Our results pave the way to the applications to non-volatile memory and reconfigurable logic circuitry.
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