| Budget Amount *help |
¥212,160,000 (Direct Cost: ¥163,200,000、Indirect Cost: ¥48,960,000)
Fiscal Year 2015: ¥22,100,000 (Direct Cost: ¥17,000,000、Indirect Cost: ¥5,100,000)
Fiscal Year 2014: ¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2013: ¥40,560,000 (Direct Cost: ¥31,200,000、Indirect Cost: ¥9,360,000)
Fiscal Year 2012: ¥56,550,000 (Direct Cost: ¥43,500,000、Indirect Cost: ¥13,050,000)
Fiscal Year 2011: ¥66,690,000 (Direct Cost: ¥51,300,000、Indirect Cost: ¥15,390,000)
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| Outline of Final Research Achievements |
A selective growth method for semiconductor nanowires by using electron beam lithography and metal organic vapor phase epitaxy has been established. The crystal phase transition mechanism and the nanowire growth on graphene were clarified. The crystal structure and optical properties of GaAs and InP nanowires grown were characterized by electron microscopy and photoluminescence. Light emitting diodes, solar cells and transistors using hetero-structure/p-n junction nanowires were fabricated to investigate the device characteristics, which showed promise for application to future nano-electronics.
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