| Budget Amount *help |
¥210,340,000 (Direct Cost: ¥161,800,000、Indirect Cost: ¥48,540,000)
Fiscal Year 2015: ¥26,130,000 (Direct Cost: ¥20,100,000、Indirect Cost: ¥6,030,000)
Fiscal Year 2014: ¥32,760,000 (Direct Cost: ¥25,200,000、Indirect Cost: ¥7,560,000)
Fiscal Year 2013: ¥34,580,000 (Direct Cost: ¥26,600,000、Indirect Cost: ¥7,980,000)
Fiscal Year 2012: ¥41,080,000 (Direct Cost: ¥31,600,000、Indirect Cost: ¥9,480,000)
Fiscal Year 2011: ¥75,790,000 (Direct Cost: ¥58,300,000、Indirect Cost: ¥17,490,000)
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| Outline of Final Research Achievements |
New SNDM family method, which measures not only dC/dV term but also higher order differentiation terms, has been developed. Using this method, we can obtain much more precise physical information of materials and devices. We name this technique super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). We can easily reconstruct C-V curve at each pixel with this method. As a result, the analysis ability is drastically improved.Next, we have developed scanning nonlinear dielectric potentiometory (SNDP) which can measure dipole moment induced surface potential with atomic resolution. Using this method, we simultaneously measured topography and surface potential of mono layer graphene formed on the 4H-SiC(0001) substrate. Finally, memory density of 3.4Tbit/inch2 were achieved using the hard-disk-drive (HDD)-type ferroelectric data storage system.
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