Control and detection of spin dynamics in semiconductor/ferromagent hybrid structures
| Project/Area Number |
23246002
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Tsukuba (2012-2013)
Tohoku University (2011) |
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Principal Investigator |
OHNO Yuzo 筑波大学, 数理物質系, 教授 (00282012)
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| Co-Investigator(Kenkyū-buntansha) |
YAMANOUCHI Michihiko 東北大学, 電気通信研究所, 助教 (40590899)
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| Project Period (FY) |
2011-11-18 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000)
Fiscal Year 2013: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
Fiscal Year 2012: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
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| Keywords | スピントロニクス / GaAs / スピン注入 / Hanle効果 / 顕微Kerr測定 / 顕微カー効果測定 / トンネル磁気接合 / 顕微カー回転測定 / スピン流 / スピン軌道相互作用 / トンネル接合 / トンネル磁気抵抗 / 電流誘起スピン分極 |
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| Research Abstract |
We fabricated three-terminal devices which have a CoFeB/MgO/GaAs magnetic tunnel junction with perpendicular magnetization, and performed magnetotransport and Kerr microscopy measurements to clarify the generation and detection of spin accumulation in GaAs semiconductors. In magnetotransport measurements, we observed typical Hanle effect. However, in Kerr microscopy measurements, the Kerr rotation signal remains even in high in-plane magnetic fields : Bx =+/- 2.0 T. The results suggest that the interface between MgO and GaAs plays crucial role for perpendicular spin injection.
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Report
(4 results)
Research Products
(19 results)
