Realization of non-dislocation SiC crystal
Project/Area Number |
23246004
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Nagoya University |
Principal Investigator |
UJIHARA Toru 名古屋大学, 工学(系)研究科(研究院), 教授 (60312641)
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Co-Investigator(Kenkyū-buntansha) |
HARADA Shunta 名古屋大学, 工学研究科, 助教 (30612460)
SASAKI Katsuhiro 名古屋大学, 工学研究科, 准教授 (00211938)
KATO Masashi 名古屋工業大学, 工学研究科, 准教授 (80362317)
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Project Period (FY) |
2011-04-01 – 2014-03-31
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Project Status |
Completed (Fiscal Year 2013)
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Budget Amount *help |
¥48,620,000 (Direct Cost: ¥37,400,000、Indirect Cost: ¥11,220,000)
Fiscal Year 2013: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2012: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2011: ¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
|
Keywords | 結晶成長 / シリコンカーバイド / 転位 / SiC / 溶液成長 / 結晶欠陥 / SiC |
Research Abstract |
The improvement of substrate quality is important to apply SiC materials to high-performance power device. The purpose of this study is to achieve "ultra-high quality" crystal grown by solution growth method. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes by macrosteps advancing and the converted defects are swept from the crystal during growth process. In addition, the converted ratio depends on the height and microstructure of the macrosteps. Utilizing this conversion phenomenon, we have demonstrated the ultra-high quality growth of SiC.
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Report
(4 results)
Research Products
(68 results)
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[Journal Article] "Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth"2012
Author(s)
S. Harada, Alexander, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka, and T. Ujihara
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Journal Title
Crystal Growth & Design
Volume: 12, (6)
Pages: 3209-3214
Related Report
Peer Reviewed
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[Presentation] 高品質SiC 溶液成長2013
Author(s)
宇治原徹, 原田俊太
Organizer
資源・素材学会 平成25年度春季大会
Place of Presentation
千葉工業大学
Year and Date
2013-03-30
Related Report
Invited
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