| Budget Amount *help |
¥48,620,000 (Direct Cost: ¥37,400,000、Indirect Cost: ¥11,220,000)
Fiscal Year 2013: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2012: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2011: ¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
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| Research Abstract |
The improvement of substrate quality is important to apply SiC materials to high-performance power device. The purpose of this study is to achieve "ultra-high quality" crystal grown by solution growth method. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes by macrosteps advancing and the converted defects are swept from the crystal during growth process. In addition, the converted ratio depends on the height and microstructure of the macrosteps. Utilizing this conversion phenomenon, we have demonstrated the ultra-high quality growth of SiC.
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