• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Realization of non-dislocation SiC crystal

Research Project

Project/Area Number 23246004
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionNagoya University

Principal Investigator

UJIHARA Toru  名古屋大学, 工学(系)研究科(研究院), 教授 (60312641)

Co-Investigator(Kenkyū-buntansha) HARADA Shunta  名古屋大学, 工学研究科, 助教 (30612460)
SASAKI Katsuhiro  名古屋大学, 工学研究科, 准教授 (00211938)
KATO Masashi  名古屋工業大学, 工学研究科, 准教授 (80362317)
Project Period (FY) 2011-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥48,620,000 (Direct Cost: ¥37,400,000、Indirect Cost: ¥11,220,000)
Fiscal Year 2013: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2012: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2011: ¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
Keywords結晶成長 / シリコンカーバイド / 転位 / SiC / 溶液成長 / 結晶欠陥 / SiC
Research Abstract

The improvement of substrate quality is important to apply SiC materials to high-performance power device. The purpose of this study is to achieve "ultra-high quality" crystal grown by solution growth method. In our research, it has been revealed that threading dislocations are converted to other defects in the basal planes by macrosteps advancing and the converted defects are swept from the crystal during growth process. In addition, the converted ratio depends on the height and microstructure of the macrosteps. Utilizing this conversion phenomenon, we have demonstrated the ultra-high quality growth of SiC.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • Research Products

    (68 results)

All 2014 2013 2012

All Journal Article (14 results) (of which Peer Reviewed: 14 results) Presentation (52 results) (of which Invited: 4 results) Book (2 results)

  • [Journal Article] Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4HSiC Using Al-Si Solvent2014

    • Author(s)
      S.Harada, Y.Yamamoto, S.Y.Xiao, M.Tagawa, T.Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 778-780 Pages: 67-70

    • DOI

      10.4028/www.scientific.net/msf.778-780.67

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth2013

    • Author(s)
      K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 740-742 Pages: 15-18

    • DOI

      10.4028/www.scientific.net/msf.740-742.15

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4HSiC2013

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, T.Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 740-742 Pages: 189-192

    • DOI

      10.4028/www.scientific.net/msf.740-742.189

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC2013

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, M.Tagawa, T.Ujihara
    • Journal Title

      APL Mater.

      Volume: 1(2) Issue: 2 Pages: 22109-22109

    • DOI

      10.1063/1.4818357

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth"2013

    • Author(s)
      K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 740-742 Pages: 15-18

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC"2013

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 740-742 Pages: 189-192

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth2012

    • Author(s)
      Y.Yamamoto, K.Seki, S.Kozawa, Alexander, S.Harada, T.Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 53-56

    • DOI

      10.4028/www.scientific.net/msf.717-720.53

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth2012

    • Author(s)
      T.Ujihara, S.Kozawa, K.Seki, Alexander, Y.Yamamoto, S.Harada
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 351-354

    • DOI

      10.4028/www.scientific.net/msf.717-720.351

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during Sic Solution Growth2012

    • Author(s)
      S. Harada, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka and T. Ujihara
    • Journal Title

      Crystal Growth & Design

      Volume: 12 Issue: 6 Pages: 3209-3214

    • DOI

      10.1021/cg300360h

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth2012

    • Author(s)
      Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Journal Title

      Appl. Phys. Express

      Volume: 5 Issue: 11 Pages: 115501-115501

    • DOI

      10.1143/apex.5.115501

    • NAID

      10031126459

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] "High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth"2012

    • Author(s)
      Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
    • Journal Title

      Appl. Phys. Express

      Volume: 5

    • NAID

      10031126459

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth"2012

    • Author(s)
      Y. Yamamoto, K. Seki, S. Kozawa, Alexander, S. Harada, T. Ujihara
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 53-56

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth"2012

    • Author(s)
      T. Ujihara, S. Kozawa, K. Seki, Alexander, Y. Yamamoto, S. Harada
    • Journal Title

      Mater. Sci. Forum

      Volume: 717-720 Pages: 351-354

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth"2012

    • Author(s)
      S. Harada, Alexander, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka, and T. Ujihara
    • Journal Title

      Crystal Growth & Design

      Volume: 12, (6) Pages: 3209-3214

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal2014

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      2012 MRS Spring Meeting & Exhibit
    • Place of Presentation
      California, USA
    • Year and Date
      2014-04-10
    • Related Report
      2013 Final Research Report
  • [Presentation] Ultra-high quality SiC crystal grown by solution method2014

    • Author(s)
      T.Ujihara
    • Organizer
      ICSEM 2014 (International Conference on Science and Engineering of Materials)
    • Place of Presentation
      Sharda University, Greater Noida, India
    • Year and Date
      2014-01-08
    • Related Report
      2013 Final Research Report
  • [Presentation] "Ultra-high quality SiC crystal grown by solution method"2014

    • Author(s)
      T.Ujihara
    • Organizer
      ICSEM 2014 (International Conference on Science and Engineering of Materials
    • Place of Presentation
      Sharda University, Greater Noida, India
    • Related Report
      2013 Annual Research Report
  • [Presentation] Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth2013

    • Author(s)
      S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
    • Organizer
      ISETS '13
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2013-12-14
    • Related Report
      2013 Final Research Report
  • [Presentation] SiC 溶液成長過程における基底面転位の形成2013

    • Author(s)
      肖世玉, 原田俊太, 宇治原徹
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Year and Date
      2013-12-09
    • Related Report
      2013 Final Research Report
  • [Presentation] 4H-SiC 溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関2013

    • Author(s)
      原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
    • Organizer
      SiC 及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館
    • Year and Date
      2013-12-09
    • Related Report
      2013 Final Research Report
  • [Presentation] 4H-SiC 溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関2013

    • Author(s)
      原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
    • Organizer
      日本結晶成長学会 第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Year and Date
      2013-11-07
    • Related Report
      2013 Final Research Report
  • [Presentation] SiC 溶液法による低密度ステップ構造の形成2013

    • Author(s)
      武藤拓也
    • Organizer
      日本金属学会・日本鉄鋼協会東海支部 第23回学生による材料フォーラム
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-11-01
    • Related Report
      2013 Final Research Report
  • [Presentation] Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure2013

    • Author(s)
      S.Harada, Y.Yamamoto, S.Xiao, A.Horio, M.Tagawa, T.Ujihara
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2013-09-30
    • Related Report
      2013 Final Research Report
  • [Presentation] Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC2013

    • Author(s)
      T.Umezaki, D.Koike, S.Harada, T.Ujihara
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2013-09-30
    • Related Report
      2013 Final Research Report
  • [Presentation] SiC溶液成長過程における基底面転位の形成2013

    • Author(s)
      肖世玉, 朱燦, 原田俊太, 宇治原徹
    • Organizer
      2013年第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Year and Date
      2013-09-18
    • Related Report
      2013 Final Research Report
  • [Presentation] SiC 溶液成長過程における貫通転位変換と成長表面のステップ構造2013

    • Author(s)
      原田俊太, 山本祐治, 肖世玉, 堀尾篤史, 田川美穂, 宇治原徹
    • Organizer
      2013年第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Year and Date
      2013-09-18
    • Related Report
      2013 Final Research Report
  • [Presentation] Evolution of threading screw dislocation conversion during solution growth of 4H-SiC2013

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, M.Tagawa, T.Ujihara
    • Organizer
      ICCGE-17
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2013-08-15
    • Related Report
      2013 Final Research Report
  • [Presentation] Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects2013

    • Author(s)
      T.Ujihara, Y.Yamamoto, S.Harada, S.Xiao, K.Seki
    • Organizer
      ICCGE-17
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2013-08-12
    • Related Report
      2013 Final Research Report
  • [Presentation] 高品質SiC 溶液成長2013

    • Author(s)
      宇治原徹, 原田俊太
    • Organizer
      資源・素材学会 平成25年度春季大会
    • Place of Presentation
      千葉工業大学
    • Year and Date
      2013-03-30
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] 4H-SiC 溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造2013

    • Author(s)
      原田俊太, 國松亮太, 田川美穂, 山本悠太, 荒井重勇, 田中信夫, 宇治原徹
    • Organizer
      応用物理学会 2012年春季 第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-28
    • Related Report
      2013 Final Research Report
  • [Presentation] "Ultra-high quality SiC crystal grown by solution method utilizing the conversion from threading dislocations to basal plane defects"2013

    • Author(s)
      T. Ujihara, Y. Yamamoto, S. Harada, S. Xiao, K. Seki
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy(ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Related Report
      2013 Annual Research Report
  • [Presentation] "Evolution of threading screw dislocation conversion during solution growth of 4H-SiC"2013

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, T. Ujihara
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      University of Warsaw, Warsaw, Poland
    • Related Report
      2013 Annual Research Report
  • [Presentation] “SiC溶液成長過程における基底面転位の形成”2013

    • Author(s)
      肖世玉,朱燦,原田俊太,宇治原徹
    • Organizer
      2013年 第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] “SiC溶液成長過程における貫通転位変換と成長表面のステップ構造”2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹
    • Organizer
      2013年 第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス, 京都府
    • Related Report
      2013 Annual Research Report
  • [Presentation] "Control of Dislocation Conversion during Solution Growth by Changing Surface Step Structure"2013

    • Author(s)
      S. Harada, Y. Yamamoto, S. Xiao, A. Horio, M. Tagawa, T. Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
    • Place of Presentation
      Phoenix Seagaia Resort, Miyazaki, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] "Increase in the Growth Rate by Rotating the Seed Crystal at a High Speed during the Solution Growth of SiC"2013

    • Author(s)
      T. Umezaki, D. Koike, S. Harada, T. Ujihara
    • Organizer
      the International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
    • Place of Presentation
      Phoenix Seagaia Resort, Miyazaki, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] “SiC溶液法による低密度ステップ構造の形成”2013

    • Author(s)
      武藤拓也
    • Organizer
      日本金属学会・日本鉄鋼協会東海支部 第23回学生による材料フォーラム
    • Place of Presentation
      豊田講堂, 愛知県
    • Related Report
      2013 Annual Research Report
  • [Presentation] “4H-SiC溶液成長過程における貫通転位変換挙動と成長表面モフォロジーの相関”2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史, 田川美穂,宇治原徹
    • Organizer
      日本結晶成長学会 第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター (TOiGO内), 長野県
    • Related Report
      2013 Annual Research Report
  • [Presentation] “SiC溶液成長過程における基底面転位の形成”2013

    • Author(s)
      肖 世玉,原田俊太,宇治原徹
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館,埼玉県
    • Related Report
      2013 Annual Research Report
  • [Presentation] “4H-SiC溶液成長における成長表面のステップ構造と貫通転位変換挙動の相関”2013

    • Author(s)
      原田俊太,山本祐治,肖世玉,堀尾篤史,田川美穂,宇治原徹
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      埼玉会館,埼玉県
    • Related Report
      2013 Annual Research Report
  • [Presentation] "Structure of basal plane defects formed by threading screw dislocation conversion during high quality SiC solution growth"2013

    • Author(s)
      S.Harada, R.Kunimatsu, Xiao Shiyu, Y.Yamamoto, M.Tagawa, Y.Yamamoto, S.Arai, N.Tanaka, T.Ujihara
    • Organizer
      ISETS '13
    • Place of Presentation
      Nagoya University, Nagoya
    • Related Report
      2013 Annual Research Report
  • [Presentation] “高品質SiC溶液成長”2013

    • Author(s)
      宇治原徹, 原田俊太
    • Organizer
      一般社団法人資源・素材学会 平成25年度春季大会
    • Place of Presentation
      千葉工業大学津田沼キャンパス, 千葉県
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] “4H-SiC溶液成長過程における貫通らせん転位変換により形成する欠陥の微細構造”2013

    • Author(s)
      原田俊太,國松亮太,田川美穂,山本悠太,荒井重勇,田中信夫,宇治原徹
    • Organizer
      公益社団法人応用物理学会 2012年春季 第60回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学, 神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Si-C-X溶媒を用いたSiC 溶液成長における結晶化多形の熱力学的考察2012

    • Author(s)
      堀尾篤史, 原田俊太, 宇治原徹
    • Organizer
      SiC 及び関連ワイドギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂
    • Year and Date
      2012-11-19
    • Related Report
      2013 Final Research Report
  • [Presentation] 一方向の溶液流れ下におけるSiC のステップバンチングの挙動2012

    • Author(s)
      朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Year and Date
      2012-11-10
    • Related Report
      2013 Final Research Report
  • [Presentation] 溶液成長過程における貫通転位変換を利用した高品質4H-SiC の実現2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹
    • Organizer
      SiC 及び関連ワイドギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂
    • Year and Date
      2012-11-09
    • Related Report
      2013 Final Research Report
  • [Presentation] 溶液法による高品質SiC 結晶成長メカニズム2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Year and Date
      2012-11-09
    • Related Report
      2013 Final Research Report
  • [Presentation] Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      IUMRS-ICEM2012
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2012-09-25
    • Related Report
      2013 Final Research Report
  • [Presentation] Evolution of Threading Edge Dislocation During Solution Growth of SiC2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      SSDM2012
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2012-09-25
    • Related Report
      2013 Final Research Report
  • [Presentation] 溶液法による超高品質SiC 結晶成長2012

    • Author(s)
      宇治原徹, 原田俊太, 山本祐治, 関和明
    • Organizer
      日本セラミックス協会 第25回秋季シンポジウム
    • Place of Presentation
      名古屋大学
    • Year and Date
      2012-09-19
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] 4H-SiC 溶液成長における貫通刃状転位の選択的変換2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 宇治原徹
    • Organizer
      応用物理学会 2012年秋季 第73回応用物理学関係連合講演会
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-12
    • Related Report
      2013 Final Research Report
  • [Presentation] Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, T.Ujihara
    • Organizer
      ECSCRM-2012
    • Place of Presentation
      Saint-Petersburg, Russia
    • Year and Date
      2012-09-04
    • Related Report
      2013 Final Research Report
  • [Presentation] Possibility for elimination of dislocations in SiC crystal : conversion of threading edge dislocations by solution growth2012

    • Author(s)
      S.Harada, Y.Yamamoto, K.Seki, A.Horio, T.Mitsuhashi, C.Zhu, M.Tagawa, T.Ujihara
    • Organizer
      ECSCRM-2012
    • Place of Presentation
      Saint-Petersburg, Russia
    • Year and Date
      2012-09-04
    • Related Report
      2013 Final Research Report
  • [Presentation] Effect of surface polarity on the conversion of threading dislocations in solution growth2012

    • Author(s)
      Y.Yamamoto, S.Harada, K.Seki, A.Horio, T.Mitsuhashi, T.Ujihara
    • Organizer
      ECSCRM-2012
    • Place of Presentation
      Saint-Petersburg, Russia
    • Year and Date
      2012-09-04
    • Related Report
      2013 Final Research Report
  • [Presentation] "Direct Observation of Defect Evolution during Solution Growth of SiC by Synchrotron X-ray Topography"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
    • Organizer
      International Union of Materials Research Societies International Conference on Electronic Materials (IUMRS-ICEM2012)
    • Place of Presentation
      PACIFICO YOKOHAMA, Yokohama, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] "Evolution of Threading Edge Dislocation During Solution Growth of SiC"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM2012)
    • Place of Presentation
      Kyoto International Conference Center, Kyoto, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] "Reduction of threading screw dislocation density utilizing defect conversion during solution growth of 4H-SiC"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, T. Ujihara
    • Organizer
      The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
    • Place of Presentation
      Hotel Saint Petersburg, Saint-Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] "Possibility for elimination of dislocations in SiC crystal: conversion of threading edge dislocations by solution growth"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, C. Zhu, M. Tagawa, T. Ujihara
    • Organizer
      The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
    • Place of Presentation
      Hotel Saint Petersburg, Saint-Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] "Effect of surface polarity on the conversion of threading dislocations in solution growth"2012

    • Author(s)
      Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
    • Organizer
      The 9th European Conference on Silicon Carbide & Related Materials (ECSCRM-2012)
    • Place of Presentation
      Hotel Saint Petersburg, Saint-Petersburg, Russia
    • Related Report
      2012 Annual Research Report
  • [Presentation] “溶液成長過程における貫通転位変換を利用した高品質4H-SiCの実現”2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 田川美穂, 宇治原徹
    • Organizer
      SiC及び関連ワイド ギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂, 大阪府
    • Related Report
      2012 Annual Research Report
  • [Presentation] “Si-C-X溶媒を用いたSiC溶液成長における結晶化多形の熱力学的考察”2012

    • Author(s)
      堀尾篤史, 原田俊太,宇治原徹
    • Organizer
      SiC及び関連ワイド ギャップ半導体研究会 第21回講演会
    • Place of Presentation
      大阪市中央公会堂, 大阪府
    • Related Report
      2012 Annual Research Report
  • [Presentation] “一方向の溶液流れ下におけるSiCのステップバンチングの挙動”2012

    • Author(s)
      朱燦, 原田俊太, 関和明, 新家寛正, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議 (NCCG-42)
    • Place of Presentation
      九州大学, 福岡県
    • Related Report
      2012 Annual Research Report
  • [Presentation] “溶液法による高品質SiC結晶成長メカニズム”2012

    • Author(s)
      原田俊太, 山本祐治, 関和明, 堀尾篤史, 三橋貴仁, 田川美穂, 宇治原徹
    • Organizer
      第42回結晶成長国内会議 (NCCG-42)
    • Place of Presentation
      九州大学, 福岡県
    • Related Report
      2012 Annual Research Report
  • [Presentation] "Efficient Process for Ultrahigh Quality 4H-SiC Crystal Utilizing Solution Growth on Off-axis Seed Crystal"2012

    • Author(s)
      S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, T. Ujihara
    • Organizer
      2012 MRS Spring Meeting & Exhibit
    • Place of Presentation
      Moscone West Convention Center Martiott Marquis San Francisco, California, USA
    • Related Report
      2011 Annual Research Report
  • [Presentation] “4H-SiC溶液成長における貫通刃状転位の選択的変換”2012

    • Author(s)
      原田俊太, 山本祐治, 関 和明, 堀尾篤史, 三橋貴仁, 宇治原徹
    • Organizer
      公益社団法人 応用物理学会 2012年秋季 第73回 応用物理学関係連合講演会
    • Place of Presentation
      愛媛大学城北地区, 愛媛県
    • Related Report
      2011 Annual Research Report
  • [Presentation] “溶液法による超高品質SiC結晶成長”2012

    • Author(s)
      宇治原徹, 原田俊太,山本祐治, 関 和明
    • Organizer
      公益社団法人日本セラミックス協 会 第25回秋季シンポジウム
    • Place of Presentation
      名古屋大学, 愛知県
    • Related Report
      2011 Annual Research Report
    • Invited
  • [Book] SiC パワーデバイスの開発と最新動向―普及に向けたデバイスプロセスと実装技術―2012

    • Author(s)
      宇治原徹, 他
    • Total Pages
      361
    • Publisher
      S&T出版
    • Related Report
      2013 Final Research Report
  • [Book] 「SiCパワーデバイスの開発と最新動向―普及に向けたデバイスプロセスと実装技術―」2012

    • Author(s)
      宇治原徹
    • Total Pages
      361
    • Publisher
      S&T出版
    • Related Report
      2012 Annual Research Report

URL: 

Published: 2011-04-06   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi