|Budget Amount *help
¥49,010,000 (Direct Cost: ¥37,700,000、Indirect Cost: ¥11,310,000)
Fiscal Year 2014: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Fiscal Year 2013: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Fiscal Year 2012: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Fiscal Year 2011: ¥14,690,000 (Direct Cost: ¥11,300,000、Indirect Cost: ¥3,390,000)
|Outline of Final Research Achievements
We have investigated and developed to control of structural/material properties of InN/GaN quasi-ternary alloys and apply them to III-Nitride solar cells, based on high structural perfection of “1-monolayer-InN”/GaN and its unique self-organized deposition process at remarkably high temperatures.
The coherent (InN)1/(GaN)4 short-period superlattices with continuum electronic band states were successfully realized by MBE structural control. These pave the way to practical band engineering in the InN/GaN quasi-ternary alloys. Furthermore, InGaN/pn-GaN solar cells were grown by MOVPE, where InGaN active layers were designed as InN/GaN quasi-ternary alloys and grown based on the developed MBE process. The junction properties of solar cells were drastically improved, and the record junction-resistance-values higher than 20 MΩ・cm2, or detection limit, were demonstrated.