Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologies

• Project/Area Number: 23246058
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: TAKAGI Shinichi 東京大学, 工学(系)研究科(研究院), 教授 (30372402)
• Co-Investigator(Renkei-kenkyūsha): TAKENAKA Mitsuru 東京大学, 大学院工学系研究科, 准教授 (20451792)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥49,140,000 (Direct Cost: ¥37,800,000、Indirect Cost: ¥11,340,000); Fiscal Year 2013: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000); Fiscal Year 2012: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000); Fiscal Year 2011: ¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
• Keywords: MOSFET / ゲルマニウム / 移動度 / 反転層 / サブバンド

Research Abstract

We have clarified from comparison between effective and Hall mobility of Ge MOSFETs that inversion-layer carriers are trapped into interface states locating inside the conduction and valence bands, leading to the reduction in the effective mobility. Also, atomic deuterium annealing is fond to reduce the interface states and to increase the effective mobility. Also, HfO2/Al2O3/GeOx/Ge MOSFETs with EOT of 0.76 nm, realized by ECR plasma oxidation, exhibited peak electron and hole mobility of 690 and 550 cm2/Vs, respectively. The surface orientation dependence of the effective mobility has also been revealed. In addition, we demonstrated GOI n- and p-MOSFETs with GOI thinner than 20 nm, fabricated by the Ge condensation and Ge wafer bonding, and evaluated the mobility behaviors.

Research Products

• [Journal Article] Impact of plasma postoxidation temperature on the electrical properties of Al_2O_3/GeO_X/Ge pMOSFETs and nMOSFETs (2014)
  • Author(s): R. Zhang, J-C. Lin, X. Yu, M. Takenaka, S. Takagi
  • Journal Title: IEEE Transaction on Electron Devices Volume: 61 Issue: 2 Pages: 416-422
  • DOI: 10.1109/ted.2013.2295822
  • Peer Reviewed
• [Journal Article] Invited : Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies (2013)
  • Author(s): S. Takagi, Rui Zhang, S. -H. Kim, M. Yokoyama, and M. Takenaka
  • Journal Title: ECS Trans. Volume: VOL. 59 Issue: 9 Pages: 137-148
  • DOI: 10.1149/05809.0137ecst
  • Peer Reviewed
• [Journal Article] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform (2013)
  • Author(s): S. Takagi, S. -H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka
  • Journal Title: Solid Stale Electronics Volume: 88 Pages: 2-8
  • DOI: 10.1016/j.sse.2013.04.020
  • Peer Reviewed
• [Journal Article] Invited : III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices (2013)
  • Author(s): S. Takagi and M. Takenaka
  • Journal Title: ECS Trans. Volume: VOL. 54 Issue: 1 Pages: 39-54
  • DOI: 10.1149/05401.0039ecst
  • Peer Reviewed
• [Journal Article] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties (2013)
  • Author(s): S.Takagi, R.Zhang, and M.Takenaka
  • Journal Title: Micoroelectron. Eng. Volume: 109 Pages: 389-395
  • DOI: 10.1016/j.mee.2013.04.034
  • Peer Reviewed
• [Journal Article] Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces (2013)
  • Author(s): R. Zhang, J. C. Lin, X. Yu, M. Takenaka, S. Takagi
  • Journal Title: Microelectron. Eng. Volume: 109 Pages: 97-100
  • DOI: 10.1016/j.mee.2013.03.034
  • Peer Reviewed
• [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs (2013)
  • Author(s): S.Takagi, M.S.-H.Kim, R.Zhang, N.Taoka, Yokoyama and M.Takenaka
  • Journal Title: ECS Trans. Volume: 53(3) Issue: 3 Pages: 97-105
  • DOI: 10.1149/05303.0003ecst
• [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications (2013)
  • Author(s): S.Takagi, M.Yokoyama, S.-H.Kim, R.Suzuki, R.Zhang, N.Taoka and M.Takenaka
  • Journal Title: ECS Trans. Volume: 53(3) Issue: 3 Pages: 85-96
  • DOI: 10.1149/05303.0085ecst
• [Journal Article] High Mobility Ge p- and n-MOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation (2013)
  • Author(s): R.Zhang, P.-C.Huang, J.-C.Lin, N.Taoka, M.Takenaka and S.Takagi
  • Journal Title: IEEE Trans. Electron Devices Volume: vol.60, no.3 Issue: 2 Pages: 927-934
  • DOI: 10.1109/ted.2011.2176495
  • Peer Reviewed
• [Journal Article] Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures (2013)
  • Author(s): R. Zhang, P.-C. Huang, J.-C. Lin, M. Takenaka and S. Takagi
  • Journal Title: Appl. Phys. Lett. Volume: 102 Issue: 8 Pages: 81603-81603
  • DOI: 10.1063/1.4794013
  • Peer Reviewed
• [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications (invited) (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
  • Journal Title: ECS Transactions Volume: 53 (3) Pages: 85-96
• [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs (2013)
  • Author(s): S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
  • Journal Title: ECS Transactions Volume: 53 (3) Pages: 97-105
• [Journal Article] III-V/Ge MOS Transistor Technologies for Future ULSI (invited) (2013)
  • Author(s): S. Takagi and M. Takenaka
  • Journal Title: ECS Transactions Volume: 54 (1) Pages: 39-54
• [Journal Article] Performance Enhancement Technologies in III-V/Ge MOSFETs (invited) (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
  • Journal Title: ECS Transactions Volume: 58(9) Pages: 137-148
• [Journal Article] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3 (2012)
  • Author(s): R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
  • Journal Title: ECS Trans. Volume: 50(9) Issue: 9 Pages: 699-706
  • DOI: 10.1149/05009.0699ecst
• [Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks (2012)
  • Author(s): S.Takagi, R.Zhang, R.Suzuki N.Taoka, M.Yokoyama and M.Takenaka
  • Journal Title: ECS Trans. Volume: 50(4) Issue: 4 Pages: 107-122
  • DOI: 10.1149/05004.0107ecst
• [Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks (2012)
  • Author(s): S. Takagi
  • Journal Title: ECS Transaction Volume: 50 (4) Pages: 107-122
• [Journal Article] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3 (2012)
  • Author(s): R. Zhang
  • Journal Title: ECS Transaction Volume: 50 (9) Pages: 699-706
• [Journal Article] Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates (2011)
  • Author(s): J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi
  • Journal Title: Appl. Phys. Lett. Volume: 99 Issue: 14 Pages: 142108-142108
  • DOI: 10.1063/1.3647631
  • Peer Reviewed
• [Journal Article] Device and integration technologies of III-V/Ge channel CMOS (2011)
  • Author(s): S.Takagi, M.Yokoyama, Y.-H.Kim and M.Takenaka
  • Journal Title: ECS Trans. Volume: 41(7) Issue: 7 Pages: 203-218
  • DOI: 10.1149/1.3633300
• [Journal Article] MOS interface control technologies for III-V/Ge channel MOSFETs (2011)
  • Author(s): S.Takagi, R.Zhang, T.Hoshii and M.Takenaka
  • Journal Title: ECS Trans. Volume: 41(3) Issue: 3 Pages: 3-20
  • DOI: 10.1149/1.3633015
• [Journal Article] Suppression of ALD-induced degradation of Ge MOS interface properties by low power plasma nitridation of GeO2 (2011)
  • Author(s): R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi
  • Journal Title: J. Electrochem. Soc. Volume: 158 Issue: 8 Pages: G178-G178
  • DOI: 10.1149/1.3599065
  • Peer Reviewed
• [Journal Article] Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties (2011)
  • Author(s): R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
  • Journal Title: Microelecton. Engineering Volume: 88 Issue: 7 Pages: 1533-1536
  • DOI: 10.1016/j.mee.2011.03.130
  • Peer Reviewed
• [Journal Article] Prospective and critical issues of III-V/Ge CMOS on Si platform (2011)
  • Author(s): S.Takagi and M.Takenaka
  • Journal Title: ECS Trans. Volume: 35(3) Issue: 3 Pages: 279-298
  • DOI: 10.1149/1.3569921
• [Journal Article] Al2O3/GeOx/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Post Oxidation (2011)
  • Author(s): R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
  • Journal Title: Appl. Phys. Lett. Volume: vol.98 Issue: 11 Pages: 112902-112902
  • DOI: 10.1063/1.3564902
  • Peer Reviewed
• [Journal Article] High Mobility Ge-based CMOS Device Technologies (2011)
  • Author(s): S.Takagi, S.Dissanayake and M.Takenaka
  • Journal Title: Key Engineering Materials Volume: Vol.470 Pages: 1-7
  • DOI: 10.4028/www.scientific.net/kem.470.1
  • Peer Reviewed
• [Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs (2014)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: 7th International SiGe Technology and Device Meeting (ISTDM)
  • Place of Presentation: Swissotel Merchant Court, Singapore, Singapore
• [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates (2014)
  • Author(s): X.Yu, R.Zhang, J.Kang, T.Osada, M.Hata, M.Takenaka and S.Takagi
  • Organizer: 21st International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
  • Place of Presentation: Ambassador Hotel Hsinchu, Hsinchu, Taiwan
• [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks (2014)
  • Author(s): R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt and S. Takagi
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates (2014)
  • Author(s): X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET (2014)
  • Author(s): 金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] 容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価 (2014)
  • Author(s): 田中克久，張睿，竹中充，高木信一
  • Organizer: 2014年第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] III-V and Germanium FET Technologies on Si platform (2014)
  • Author(s): S. Takagi
  • Organizer: Compound Semiconductor International Conference
  • Place of Presentation: Sheraton Frankfurt Airport Hotel, Frankfurt, Germany
  • Invited
• [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation (2013)
  • Author(s): R.Zhang, W.Chern, X.Yu, M.Takenaka, J.L.Hoyt and S.Takagi
  • Organizer: International Electron Device Meeting (IEDM)
  • Place of Presentation: Washington Hilton, Washington, DC, USA
• [Presentation] Ultra-thin body MOS device technologies using high mobility channel materials (2013)
  • Author(s): S.Takagi, S.-H.Kim, M.Yokoyama, W.-K.Kim, R.Zhang and M.Takenaka
  • Organizer: IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
  • Place of Presentation: Hyatt Regency Monterey Hotel and Spa, Monterey, USA
  • Invited
• [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels (2013)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: IEEE Nanotechnology Materials and Devices Conference (NMDC)
  • Place of Presentation: National Cheng Kung University, Tainan, Taiwan
  • Invited
• [Presentation] III-V/Ge MOS Interface Control Using and High k Films (2013)
  • Author(s): S.Takagi, R.Zhang, R.Suzuki, C.-Y.Chang, N.Taoka, S.-H.Kim, M.Yokoyama and M.Takenaka
  • Organizer: 15th Asian Chemical Congress (15ACC)
  • Place of Presentation: Resorts World Sentosa, Singapore, Singapore
  • Invited
• [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI (2013)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • Place of Presentation: Grand Hotel de Paris, Villard de Lans, France
  • Invited
• [Presentation] Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces (2013)
  • Author(s): R.Zhang, Ju-Chin Lin, X.Yu, M.Takenaka and S.Takagi
  • Organizer: 18th Conference of "Insulating Films on Semiconductors" (INFOS)
  • Place of Presentation: The Jagiellonian University, Cracow, Poland
• [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties (2013)
  • Author(s): S.Takagi, R.Zhang and M.Takenaka
  • Organizer: 18th Conference of "Insulating Films on Semiconductors" (INFOS)
  • Place of Presentation: The Jagiellonian University, Cracow, Poland (plenary)
• [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing (2013)
  • Author(s): R.Zhang, J-C.Lin, X.Yu, M.Takenaka and S.Takagi
  • Organizer: 2013 Symposia on VLSI Technology
  • Place of Presentation: リーガロイヤルホテル京都(京都府京都市)
• [Presentation] III-V/Ge CMOS device technologies (2013)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: 20th Symposium on Nano Device Technology (SNDT)
  • Place of Presentation: International Conference Hall of Nano Device Laboratory, Hsinchu, Taiwan
  • Invited
• [Presentation] MOS interface engineering for high-mobility Ge CMOS (2013)
  • Author(s): M.Takenaka, R.Zhang, and S.Takagi
  • Organizer: International Reliability Physics Symposium (IRPS)
  • Place of Presentation: Hyatt Regency Monterey, Monterey, USA
  • Invited
• [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance (2013)
  • Author(s): S.Takagi, R.Zhang, N.Taoka, R.Suzuki, S.-H.Kim, M.Yokoyama, and M.Takenaka
  • Organizer: 2013 MRS (Material Research Society) Spring Meeting, Symposium CC "Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory"
  • Place of Presentation: Moscone Center, San Francisco, USA
  • Invited
• [Presentation] MOS interface control of high mobility channel materials for advanced CMOS applications (2013)
  • Author(s): S.Takagi, R.Zhang, R.Suzuki, N.Taoka, M.Yokoyama and M.Takenaka
  • Organizer: 3rd Molecular Materials Meeting (M3)
  • Place of Presentation: Singapore, Singapore
  • Invited
• [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance (2013)
  • Author(s): S. Takagi, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
  • Organizer: 2013 MRS (Material Research Society) Spring Meeting, Symposium CC “Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory”
  • Place of Presentation: Moscone Center, San Francisco, USA
  • Invited
• [Presentation] III-V/Ge CMOS device technologies for high performance logic applications (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
  • Organizer: 223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
  • Place of Presentation: The Sheraton Centre Toronto Hotel, Toronto, Canada
  • Invited
• [Presentation] Limiting factors of channel mobility in III-V/Ge MOSFETs (2013)
  • Author(s): S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
  • Organizer: 223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
  • Place of Presentation: The Sheraton Centre Toronto Hotel, Toronto, Canada
• [Presentation] Characterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures (2013)
  • Author(s): J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
  • Organizer: 6th International Symposium on Control of Semiconductor Interfaces (ISCSI)
  • Place of Presentation: 九州大学医学部百年講堂（福岡県福岡市）
• [Presentation] High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation (2013)
  • Author(s): S. Takagi, R. Zhang and M. Takenaka
  • Organizer: JSPS Core-to-Core Program Seminar, “Atomically Controlled Processing for Ultralarge Scale Integration”
  • Place of Presentation: 九州大学医学部百年講堂（福岡県福岡市）
  • Invited
• [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing (2013)
  • Author(s): R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
  • Organizer: 2013 Symposia on VLSI Technology
  • Place of Presentation: リーガロイヤルホテル京都（京都府京都市）
• [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties (2013)
  • Author(s): S. Takagi, R. Zhang and M. Takenaka
  • Organizer: 18th Conference of "Insulating Films on Semiconductors" (INFOS)
  • Place of Presentation: The Jagiellonian University, Cracow, Poland
  • Invited
• [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI (2013)
  • Author(s): S. Takagi and M. Takenaka
  • Organizer: International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • Place of Presentation: Grand Hôtel de Paris, Villard de Lans, France
  • Invited
• [Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術 (2013)
  • Author(s): 竹中充, 高木信一
  • Organizer: 第77回半導体・集積回路技術シンポジウム
  • Place of Presentation: 東京工業大学蔵前会館（東京都目黒区）
  • Invited
• [Presentation] Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures (2013)
  • Author(s): J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
• [Presentation] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing (2013)
  • Author(s): R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
• [Presentation] 酸化濃縮基板へのSbドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs (2013)
  • Author(s): 金佑彊, 忻宇飛, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
  • Organizer: 2013年秋季第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
• [Presentation] High Mobility Channel CMOS Technology (2013)
  • Author(s): S. Takagi
  • Organizer: 2013 International Conference on Solid State Devices and Materials (SSDM) Short Course, A. Fundamentals on Advanced CMOS/Memory technologies
  • Place of Presentation: ヒルトン福岡シーホーク（福岡県福岡市）
  • Invited
• [Presentation] Performance Enhancement Technologies in III-V/Ge MOSFETs (2013)
  • Author(s): S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
  • Organizer: 224th Fall meeting of the Electrochemical Society, ULSI Process Integration 8
  • Place of Presentation: The Hilton San Francisco Hotel, San Francisco, USA
  • Invited
• [Presentation] 低消費電力CMOSのため高移動度チャネルトランジスタ技術 (2013)
  • Author(s): 高木信一
  • Organizer: 第29回 (2013) 京都賞記念ワークショップ 先端技術部門「集積回路の発展50年とその未来－超高集積メモリ・省電力LSI に向けてー」
  • Place of Presentation: 国立京都際会館（京都府京都市）
  • Invited
• [Presentation] III-V/Ge device engineering for CMOS photonics (2013)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: 8th international conference on processing and manufacturing of advanced materials (THERMEC2013)
  • Place of Presentation: Rio Hotel, Las Vegas, USA
  • Invited
• [Presentation] Ge Oxide Growth by Plasma Oxidation of Ge substrates through Al2O3 Layers (2013)
  • Author(s): R. Zhang
  • Organizer: 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
  • Place of Presentation: 名古屋大学、愛知県
• [Presentation] Ge p- and n-MOSFETの高電界領域での移動度劣化機構の解析 と原子層平坦GeOx/Ge界面による移動度の向上 (2013)
  • Author(s): 張睿
  • Organizer: 応用物理学会シリコンテクノロジー分科会第154回研究集会/電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 機械振興会館、東京都
  • Invited
• [Presentation] High Mobility Ge MOSFETs using 0.7 nm EOT HfO2/Al2O3/GeOx/Ge Gate Stacks (2013)
  • Author(s): S. Takagi
  • Organizer: 6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar - Atomically Controlled Processing for Ultralarge Scale Integration
  • Place of Presentation: 東北大学、宮城県
  • Invited
• [Presentation] High Mobility Ge CMOS devices with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation (2013)
  • Author(s): R. Zhang
  • Organizer: 2013年第60回 応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川県
  • Invited
• [Presentation] Improvement of High Ns Mobility of Ge MOSFETs by Reducing GeOx/Ge Interface Roughness (2013)
  • Author(s): R. Zhang
  • Organizer: 2013年第60回 応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川県
• [Presentation] Mobility Degradation of Ge MOSFETs in High Ns Region due to Interface States inside Conduction and Valence Bands of Ge (2013)
  • Author(s): R. Zhang
  • Organizer: 2013年第60回 応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川県
• [Presentation] 酸化濃縮法Ge-On-Insulator層の薄膜化がMOS界面正孔移動度に与える効果 (2013)
  • Author(s): 忻宇飛
  • Organizer: 2013年第60回 応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川県
• [Presentation] 異種材料(Si/Ge/化合物半導体)集積化技術 (2012)
  • Author(s): 高木信一
  • Organizer: Electronic Journal第984回Technical Seminar
  • Place of Presentation: 東京
  • Year and Date: 2012-01-30
• [Presentation] Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces (2012)
  • Author(s): R.Zhang, P.-C.Huang, J.-C.Lin, M.Takenaka and S.Takagi
  • Organizer: 2012 International Electron Devices Meeting (IEDM)
  • Place of Presentation: San Francisco, USA
• [Presentation] MOS interface and channel engineering for high-mobility Ge/III-V CMOS (2012)
  • Author(s): S.Takagi, R.Zhang, S.-H Kim, N.Taoka, M.Yokoyama, J.-K.Suh, R.Suzuki, Y.Asakura, C.Zota and M.Takenaka
  • Organizer: 2012 International Electron Devices Meeting (IEDM)
  • Place of Presentation: San Francisco, USA
  • Invited
• [Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3 (2012)
  • Author(s): R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
  • Organizer: Symposium on 5th International SiGe, Ge, & Related Compounds : Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting
  • Place of Presentation: Honolulu, USA
• [Presentation] III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS (2012)
  • Author(s): S.Takagi, S,-H, Kim, R.Zhang, M.Yokoyama, N.Taoka and M.Takenaka
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM 2011)
  • Place of Presentation: 国立京都国際会館、京都府
  • Invited
• [Presentation] High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation (2012)
  • Author(s): R.Zhang, P.C.Huang, N.Taoka, M.Takenaka and S.Takagi
  • Organizer: Symposium on VLSI technology
  • Place of Presentation: Honolulu, USA
• [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform (2012)
  • Author(s): S.Takagi and M.Takenaka
  • Organizer: 13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
  • Place of Presentation: Grenoble, France
• [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits (2012)
  • Author(s): M. Takenaka
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: 沖縄青年会館、沖縄県
  • Invited
• [Presentation] 高移動度チャネルCMOSデバイス (2012)
  • Author(s): 高木信一
  • Organizer: 応用物理学会シリコンテクノロジー分科会第152回研究集会
  • Place of Presentation: 産業技術総合研究所、東京都
  • Invited
• [Presentation] High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks (2012)
  • Author(s): R. Zhang
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学、愛媛県
• [Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3 (2012)
  • Author(s): R. Zhang
  • Organizer: Symposium on 5th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting
  • Place of Presentation: Honolulu, USA
• [Presentation] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks (2012)
  • Author(s): S. Takagi
  • Organizer: Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics 10, Symposium E4 of the 222nd Electrochemical Society (ECS) Meeting
  • Place of Presentation: Honolulu, USA
  • Invited
• [Presentation] High Mobility Channel CMOS Transistors - Beyond Silicon (2012)
  • Author(s): S. Takagi
  • Organizer: 2012 International Electron Devices Meeting (IEDM) tutorial
  • Place of Presentation: San Francisco, USA
  • Invited
• [Presentation] Advanced Nano CMOS Platform using High Mobility Channel Materials (2012)
  • Author(s): S.Takagi, M.Takenaka
  • Organizer: International Symposium on Secure-Life Electronics-Advanced Electronics and Information Systems for Quality Life and Society-
  • Place of Presentation: 東京
• [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform (2012)
  • Author(s): S.Takagi, M.Takenaka
  • Organizer: 13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
  • Place of Presentation: Grenoble, France(invited)
• [Presentation] High Mobility Ge n- and p-MOSFETs with 1nm EOT Al2O3/GeOx/Ge Gate stacks (2012)
  • Author(s): R.Zhang, N.Taoka, P.-C.Huang, M.Takenaka, S.Takagi
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京(受賞講演)
• [Presentation] Non-Si Channel MOS Device Technologies in Nano-CMOS era (2011)
  • Author(s): S.Takagi, M.Takenaka
  • Organizer: 2011 Tsukuba Nanotechnology Symposium (TNS' 11)
  • Place of Presentation: つくば、茨城(invited)
  • Year and Date: 2011-12-15
• [Presentation] High Mobility Materials : III-V/Ge FETs (IEDM short course) (2011)
  • Author(s): S.Takagi
  • Organizer: ternational Electron Devices Meeting (IEDM)
  • Place of Presentation: Washington DC, USA(invite)
  • Year and Date: 2011-12-04
• [Presentation] High Mobility Channel MOS Device Technologies toward Nano-CMOS era (2011)
  • Author(s): S.Takagi
  • Organizer: IEEE Nanotechnology Materials and Device Conference (NMDC)
  • Place of Presentation: Jeju, Korea (plenary)
  • Year and Date: 2011-10-21
• [Presentation] High Mobility Channel MOS Device Technologies toward Nano-CMOS era (plenary talk) (2011)
  • Author(s): S.Takagi
  • Organizer: IEEE Nanotechnology Materials and Device Conference (NMDC)
  • Place of Presentation: Jeju, Korea(invited)
  • Year and Date: 2011-10-21
• [Presentation] Channel Engineering for Advanced CMOS Devices (SSDM short course) (2011)
  • Author(s): S.Takagi
  • Organizer: 2011 International Conference on Solid state Devices and Materials (SSDM 2011)
  • Place of Presentation: 名古屋(invited)
  • Year and Date: 2011-09-27
• [Presentation] Non-Si材料チャネルMOSトランジスタの研究開発動向 (2011)
  • Author(s): 高木信一, 竹中充
  • Organizer: 日本学術振興会ナノプローブテクノロジー第167委員会第63回研究会
  • Place of Presentation: 神奈川(招待講演)
  • Year and Date: 2011-07-28
• [Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFET (2011)
  • Author(s): 張睿, 岩崎敬志, 田岡紀之, 竹中充, 高木信一
  • Organizer: 応用物理学会シリコンテクノロジー分科会第139回研究集会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2011-07-21
• [Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation (2011)
  • Author(s): R.Zhang, N.Taoka, P.Huang, M.Takenaka and S.Takagi
  • Organizer: International Electron Devices Meeting (IEDM)
  • Place of Presentation: Washington DC., USA
• [Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance (2011)
  • Author(s): S.Takagi, R.Zhang, N.Taoka and M.Takenaka
  • Organizer: 41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
  • Place of Presentation: Arlington, VA, USA
  • Invited
• [Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates (2011)
  • Author(s): J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka and S.Takagi
  • Organizer: 37th Device Research Conference (DRC)
  • Place of Presentation: Santa Barbara, USA
• [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge MOS interface Properties (2011)
  • Author(s): R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
  • Organizer: 17th Conference on "Insulating Films on Semiconductors"
  • Place of Presentation: Grenoble, France
• [Presentation] High Mobility Ge pMOSFETs with ~ 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation (2011)
  • Author(s): R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
  • Organizer: VLSI symp.
  • Place of Presentation: Kyoto, Japan
• [Presentation] Advanced CMOS Technologies using III-V/Ge Channels (2011)
  • Author(s): S.Takagi, M.Takenaka
  • Organizer: 11th International Symposium on VLSI Technology, System and Applications (VLSI-TSA)
  • Place of Presentation: Hsinchu, Taiwan(invited)
• [Presentation] Prospective and critical issues of III-V/Ge CMOS on Si platform (2011)
  • Author(s): S.Takagi, M.Takenaka
  • Organizer: 219th Electrochemical Society Meeting, Symposium E3 : International Symposiu on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications -3
  • Place of Presentation: Montreal, Canada(invited)
• [Presentation] High Mobility Material Channel CMOS Technologies based on Heterogeneous Integration (Keynote Speech) (2011)
  • Author(s): S.Takagi, M.Takenaka
  • Organizer: 11th International Workshop on Junction Technology (IWJT2011)
  • Place of Presentation: Kyoto, Japan(invited)
• [Presentation] High Mobility Ge pMOSFETs with 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation (2011)
  • Author(s): R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
  • Organizer: Symposium on VLSI technology
  • Place of Presentation: Kyoto, Japan
• [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge HOS interface Properties (2011)
  • Author(s): R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
  • Organizer: 7th Conference on Insulating Films on Semiconductor
  • Place of Presentation: Grenoble, France
• [Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates (2011)
  • Author(s): J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
  • Organizer: 37th Device Research Conference (DRC)
  • Place of Presentation: Santa Barbara, CA, USA
• [Presentation] Mobility Enhancement of Strained-SGOI p-Channel MOSFETs by Applying Ge Condensation Technique to Strained-SOI Substrates (2011)
  • Author(s): J.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
  • Organizer: 第72回応用物理学関係連合講演会
  • Place of Presentation: 山形
• [Presentation] High Nobility Ge pMOSFETs with 1nm Thin EOT Al2O3/GeOx/Ge Gate stacks (2011)
  • Author(s): R.Zhang, N.Taoka, T.Iwasaki, M.Takenaka, S.Takagi
  • Organizer: 第72回応用物理学関係連合講演会
  • Place of Presentation: 山形
• [Presentation] (III-V/Ge)-On-Insulator CMOS Technology (2011)
  • Author(s): S.Takagi
  • Organizer: 37th IEEE International SOI Conference
  • Place of Presentation: Tempe, Arizona, USA(invited)
• [Presentation] MOS interface control technologies for III-V/Ge channel MOSFETs (2011)
  • Author(s): S.Takagi, R.Zhang, T.Hoshii, M.Takenaka
  • Organizer: Symposium on High Dielectric Constant and other Dielectric Materials for Nanoeleectronics and Photonics 9, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
  • Place of Presentation: Boston, Massachusetts, USA(invited)
• [Presentation] Device and integration technologies of III-V/Ge channel CMOS (2011)
  • Author(s): S.Takagi, M.Yokoyama, Y.-H.Kim, M.Takenaka
  • Organizer: Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
  • Place of Presentation: Boston, Massachusetts, USA(invited)
• [Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance (2011)
  • Author(s): S.Takagi, R.Zhang, N.Taoka, M.Takenaka
  • Organizer: 41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
  • Place of Presentation: Arlington, VA, USA(invited)
• [Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation (2011)
  • Author(s): R.Zhang, N.Taoka, P.Huang, M.Takenaka, S.Takagi
  • Organizer: International Electron Devices Meeting (IEDM)
  • Place of Presentation: Washington DC, DSA
• [Book] 2. III-V/Ge デバイス構造, 先端LSI 技術大系(GNC Tech. Vol.2)、第3章 将来技術 (2012)
  • Author(s): 高木信一
  • Publisher: グローバルネット株式会社
• [Book] 2. III-V/Ge デバイス構造”, 先端LSI技術大系（GNC Tech. Vol. 2）、第3章 将来技術 (2012)
  • Author(s): 高木信一
  • Total Pages: 9
  • Publisher: グローバルネット株式会社
• [Book] Silicon-germanium (SiGe) nanostructures -Production, properties and applications in electronics (chapter 19) (2011)
  • Author(s): Shinichi Takagi
  • Total Pages: 29
  • Publisher: Woodhead Publishing Limited
• [Book] Silicon-germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies, Silicon-germanium (SiGe) nanostructures -Production, properties and applications in electronics, chapter 19
  • Author(s): S.Takagi
• [Remarks]
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/
• [Remarks] 高木・竹中研究室
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/