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Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologies

Research Project

Project/Area Number 23246058
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

TAKAGI Shinichi  東京大学, 工学(系)研究科(研究院), 教授 (30372402)

Co-Investigator(Renkei-kenkyūsha) TAKENAKA Mitsuru  東京大学, 大学院工学系研究科, 准教授 (20451792)
Project Period (FY) 2011-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥49,140,000 (Direct Cost: ¥37,800,000、Indirect Cost: ¥11,340,000)
Fiscal Year 2013: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2012: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2011: ¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
KeywordsMOSFET / ゲルマニウム / 移動度 / 反転層 / サブバンド
Research Abstract

We have clarified from comparison between effective and Hall mobility of Ge MOSFETs that inversion-layer carriers are trapped into interface states locating inside the conduction and valence bands, leading to the reduction in the effective mobility. Also, atomic deuterium annealing is fond to reduce the interface states and to increase the effective mobility. Also, HfO2/Al2O3/GeOx/Ge MOSFETs with EOT of 0.76 nm, realized by ECR plasma oxidation, exhibited peak electron and hole mobility of 690 and 550 cm2/Vs, respectively. The surface orientation dependence of the effective mobility has also been revealed. In addition, we demonstrated GOI n- and p-MOSFETs with GOI thinner than 20 nm, fabricated by the Ge condensation and Ge wafer bonding, and evaluated the mobility behaviors.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • Research Products

    (115 results)

All 2014 2013 2012 2011 Other

All Journal Article (26 results) (of which Peer Reviewed: 13 results) Presentation (83 results) (of which Invited: 29 results) Book (4 results) Remarks (2 results)

  • [Journal Article] Impact of plasma postoxidation temperature on the electrical properties of Al_2O_3/GeO_X/Ge pMOSFETs and nMOSFETs2014

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka, S. Takagi
    • Journal Title

      IEEE Transaction on Electron Devices

      Volume: 61 Issue: 2 Pages: 416-422

    • DOI

      10.1109/ted.2013.2295822

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Invited : Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies2013

    • Author(s)
      S. Takagi, Rui Zhang, S. -H. Kim, M. Yokoyama, and M. Takenaka
    • Journal Title

      ECS Trans.

      Volume: VOL. 59 Issue: 9 Pages: 137-148

    • DOI

      10.1149/05809.0137ecst

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2013

    • Author(s)
      S. Takagi, S. -H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka
    • Journal Title

      Solid Stale Electronics

      Volume: 88 Pages: 2-8

    • DOI

      10.1016/j.sse.2013.04.020

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Invited : III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices2013

    • Author(s)
      S. Takagi and M. Takenaka
    • Journal Title

      ECS Trans.

      Volume: VOL. 54 Issue: 1 Pages: 39-54

    • DOI

      10.1149/05401.0039ecst

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013

    • Author(s)
      S.Takagi, R.Zhang, and M.Takenaka
    • Journal Title

      Micoroelectron. Eng.

      Volume: 109 Pages: 389-395

    • DOI

      10.1016/j.mee.2013.04.034

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces2013

    • Author(s)
      R. Zhang, J. C. Lin, X. Yu, M. Takenaka, S. Takagi
    • Journal Title

      Microelectron. Eng.

      Volume: 109 Pages: 97-100

    • DOI

      10.1016/j.mee.2013.03.034

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs2013

    • Author(s)
      S.Takagi, M.S.-H.Kim, R.Zhang, N.Taoka, Yokoyama and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 53(3) Issue: 3 Pages: 97-105

    • DOI

      10.1149/05303.0003ecst

    • Related Report
      2013 Final Research Report
  • [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications2013

    • Author(s)
      S.Takagi, M.Yokoyama, S.-H.Kim, R.Suzuki, R.Zhang, N.Taoka and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 53(3) Issue: 3 Pages: 85-96

    • DOI

      10.1149/05303.0085ecst

    • Related Report
      2013 Final Research Report
  • [Journal Article] High Mobility Ge p- and n-MOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2013

    • Author(s)
      R.Zhang, P.-C.Huang, J.-C.Lin, N.Taoka, M.Takenaka and S.Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: vol.60, no.3 Issue: 2 Pages: 927-934

    • DOI

      10.1109/ted.2011.2176495

    • Related Report
      2013 Final Research Report 2012 Annual Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures2013

    • Author(s)
      R. Zhang, P.-C. Huang, J.-C. Lin, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102 Issue: 8 Pages: 81603-81603

    • DOI

      10.1063/1.4794013

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] III-V/Ge CMOS device technologies for high performance logic applications (invited)2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 53 (3) Pages: 85-96

    • Related Report
      2013 Annual Research Report
  • [Journal Article] Limiting factors of channel mobility in III-V/Ge MOSFETs2013

    • Author(s)
      S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 53 (3) Pages: 97-105

    • Related Report
      2013 Annual Research Report
  • [Journal Article] III-V/Ge MOS Transistor Technologies for Future ULSI (invited)2013

    • Author(s)
      S. Takagi and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 54 (1) Pages: 39-54

    • Related Report
      2013 Annual Research Report
  • [Journal Article] Performance Enhancement Technologies in III-V/Ge MOSFETs (invited)2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 58(9) Pages: 137-148

    • Related Report
      2013 Annual Research Report
  • [Journal Article] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
    • Journal Title

      ECS Trans.

      Volume: 50(9) Issue: 9 Pages: 699-706

    • DOI

      10.1149/05009.0699ecst

    • Related Report
      2013 Final Research Report
  • [Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012

    • Author(s)
      S.Takagi, R.Zhang, R.Suzuki N.Taoka, M.Yokoyama and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 50(4) Issue: 4 Pages: 107-122

    • DOI

      10.1149/05004.0107ecst

    • Related Report
      2013 Final Research Report
  • [Journal Article] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012

    • Author(s)
      S. Takagi
    • Journal Title

      ECS Transaction

      Volume: 50 (4) Pages: 107-122

    • Related Report
      2012 Annual Research Report
  • [Journal Article] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R. Zhang
    • Journal Title

      ECS Transaction

      Volume: 50 (9) Pages: 699-706

    • Related Report
      2012 Annual Research Report
  • [Journal Article] Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates2011

    • Author(s)
      J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 99 Issue: 14 Pages: 142108-142108

    • DOI

      10.1063/1.3647631

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Device and integration technologies of III-V/Ge channel CMOS2011

    • Author(s)
      S.Takagi, M.Yokoyama, Y.-H.Kim and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 41(7) Issue: 7 Pages: 203-218

    • DOI

      10.1149/1.3633300

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
  • [Journal Article] MOS interface control technologies for III-V/Ge channel MOSFETs2011

    • Author(s)
      S.Takagi, R.Zhang, T.Hoshii and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 41(3) Issue: 3 Pages: 3-20

    • DOI

      10.1149/1.3633015

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
  • [Journal Article] Suppression of ALD-induced degradation of Ge MOS interface properties by low power plasma nitridation of GeO22011

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi
    • Journal Title

      J. Electrochem. Soc.

      Volume: 158 Issue: 8 Pages: G178-G178

    • DOI

      10.1149/1.3599065

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties2011

    • Author(s)
      R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi
    • Journal Title

      Microelecton. Engineering

      Volume: 88 Issue: 7 Pages: 1533-1536

    • DOI

      10.1016/j.mee.2011.03.130

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Prospective and critical issues of III-V/Ge CMOS on Si platform2011

    • Author(s)
      S.Takagi and M.Takenaka
    • Journal Title

      ECS Trans.

      Volume: 35(3) Issue: 3 Pages: 279-298

    • DOI

      10.1149/1.3569921

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
  • [Journal Article] Al2O3/GeOx/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: vol.98 Issue: 11 Pages: 112902-112902

    • DOI

      10.1063/1.3564902

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Mobility Ge-based CMOS Device Technologies2011

    • Author(s)
      S.Takagi, S.Dissanayake and M.Takenaka
    • Journal Title

      Key Engineering Materials

      Volume: Vol.470 Pages: 1-7

    • DOI

      10.4028/www.scientific.net/kem.470.1

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] III-V/Ge CMOS Device Technologies for Future Logic LSIs2014

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      7th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Swissotel Merchant Court, Singapore, Singapore
    • Related Report
      2013 Final Research Report
  • [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014

    • Author(s)
      X.Yu, R.Zhang, J.Kang, T.Osada, M.Hata, M.Takenaka and S.Takagi
    • Organizer
      21st International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel Hsinchu, Hsinchu, Taiwan
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
  • [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks2014

    • Author(s)
      R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt and S. Takagi
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates2014

    • Author(s)
      X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka and S. Takagi
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET2014

    • Author(s)
      金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価2014

    • Author(s)
      田中克久,張睿,竹中充,高木信一
    • Organizer
      2014年第61回 応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(神奈川県相模原市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] III-V and Germanium FET Technologies on Si platform2014

    • Author(s)
      S. Takagi
    • Organizer
      Compound Semiconductor International Conference
    • Place of Presentation
      Sheraton Frankfurt Airport Hotel, Frankfurt, Germany
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation2013

    • Author(s)
      R.Zhang, W.Chern, X.Yu, M.Takenaka, J.L.Hoyt and S.Takagi
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      Washington Hilton, Washington, DC, USA
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
  • [Presentation] Ultra-thin body MOS device technologies using high mobility channel materials2013

    • Author(s)
      S.Takagi, S.-H.Kim, M.Yokoyama, W.-K.Kim, R.Zhang and M.Takenaka
    • Organizer
      IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Place of Presentation
      Hyatt Regency Monterey Hotel and Spa, Monterey, USA
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Invited
  • [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels2013

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference (NMDC)
    • Place of Presentation
      National Cheng Kung University, Tainan, Taiwan
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Invited
  • [Presentation] III-V/Ge MOS Interface Control Using and High k Films2013

    • Author(s)
      S.Takagi, R.Zhang, R.Suzuki, C.-Y.Chang, N.Taoka, S.-H.Kim, M.Yokoyama and M.Takenaka
    • Organizer
      15th Asian Chemical Congress (15ACC)
    • Place of Presentation
      Resorts World Sentosa, Singapore, Singapore
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Invited
  • [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI2013

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
    • Place of Presentation
      Grand Hotel de Paris, Villard de Lans, France
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces2013

    • Author(s)
      R.Zhang, Ju-Chin Lin, X.Yu, M.Takenaka and S.Takagi
    • Organizer
      18th Conference of "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      The Jagiellonian University, Cracow, Poland
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
  • [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013

    • Author(s)
      S.Takagi, R.Zhang and M.Takenaka
    • Organizer
      18th Conference of "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      The Jagiellonian University, Cracow, Poland (plenary)
    • Related Report
      2013 Final Research Report
  • [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing2013

    • Author(s)
      R.Zhang, J-C.Lin, X.Yu, M.Takenaka and S.Takagi
    • Organizer
      2013 Symposia on VLSI Technology
    • Place of Presentation
      リーガロイヤルホテル京都(京都府京都市)
    • Related Report
      2013 Final Research Report
  • [Presentation] III-V/Ge CMOS device technologies2013

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      20th Symposium on Nano Device Technology (SNDT)
    • Place of Presentation
      International Conference Hall of Nano Device Laboratory, Hsinchu, Taiwan
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Invited
  • [Presentation] MOS interface engineering for high-mobility Ge CMOS2013

    • Author(s)
      M.Takenaka, R.Zhang, and S.Takagi
    • Organizer
      International Reliability Physics Symposium (IRPS)
    • Place of Presentation
      Hyatt Regency Monterey, Monterey, USA
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Invited
  • [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance2013

    • Author(s)
      S.Takagi, R.Zhang, N.Taoka, R.Suzuki, S.-H.Kim, M.Yokoyama, and M.Takenaka
    • Organizer
      2013 MRS (Material Research Society) Spring Meeting, Symposium CC "Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory"
    • Place of Presentation
      Moscone Center, San Francisco, USA
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] MOS interface control of high mobility channel materials for advanced CMOS applications2013

    • Author(s)
      S.Takagi, R.Zhang, R.Suzuki, N.Taoka, M.Yokoyama and M.Takenaka
    • Organizer
      3rd Molecular Materials Meeting (M3)
    • Place of Presentation
      Singapore, Singapore
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Invited
  • [Presentation] MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance2013

    • Author(s)
      S. Takagi, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
    • Organizer
      2013 MRS (Material Research Society) Spring Meeting, Symposium CC “Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory”
    • Place of Presentation
      Moscone Center, San Francisco, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] III-V/Ge CMOS device technologies for high performance logic applications2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Zhang, N. Taoka, and M. Takenaka
    • Organizer
      223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
    • Place of Presentation
      The Sheraton Centre Toronto Hotel, Toronto, Canada
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Limiting factors of channel mobility in III-V/Ge MOSFETs2013

    • Author(s)
      S. Takagi, M. S.-H. Kim, R. Zhang, N. Taoka, Yokoyama and M. Takenaka
    • Organizer
      223rd Spring Meeting of Electrochemical Society, E5 Symposium on Silicon compatible materials, processes and technologies for Advanced Integrated Circuits and Emerging Applications 3
    • Place of Presentation
      The Sheraton Centre Toronto Hotel, Toronto, Canada
    • Related Report
      2013 Annual Research Report
  • [Presentation] Characterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures2013

    • Author(s)
      J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
    • Organizer
      6th International Symposium on Control of Semiconductor Interfaces (ISCSI)
    • Place of Presentation
      九州大学医学部百年講堂(福岡県福岡市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation2013

    • Author(s)
      S. Takagi, R. Zhang and M. Takenaka
    • Organizer
      JSPS Core-to-Core Program Seminar, “Atomically Controlled Processing for Ultralarge Scale Integration”
    • Place of Presentation
      九州大学医学部百年講堂(福岡県福岡市)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Examination of Physical Origins Limiting Effective Mobility of Ge MOSFETs and the Improvement by Atomic Deuterium Annealing2013

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      2013 Symposia on VLSI Technology
    • Place of Presentation
      リーガロイヤルホテル京都(京都府京都市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties2013

    • Author(s)
      S. Takagi, R. Zhang and M. Takenaka
    • Organizer
      18th Conference of "Insulating Films on Semiconductors" (INFOS)
    • Place of Presentation
      The Jagiellonian University, Cracow, Poland
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] III-V/Ge MOS Transistor Technologies for Future ULSI2013

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
    • Place of Presentation
      Grand Hôtel de Paris, Villard de Lans, France
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術2013

    • Author(s)
      竹中充, 高木信一
    • Organizer
      第77回半導体・集積回路技術シンポジウム
    • Place of Presentation
      東京工業大学蔵前会館(東京都目黒区)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures2013

    • Author(s)
      J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka and S. Takagi
    • Organizer
      2013年秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing2013

    • Author(s)
      R. Zhang, J-C. Lin, X. Yu, M. Takenaka and S. Takagi
    • Organizer
      2013年秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 酸化濃縮基板へのSbドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs2013

    • Author(s)
      金佑彊, 忻宇飛, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
    • Organizer
      2013年秋季第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都府京田辺市)
    • Related Report
      2013 Annual Research Report
  • [Presentation] High Mobility Channel CMOS Technology2013

    • Author(s)
      S. Takagi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM) Short Course, A. Fundamentals on Advanced CMOS/Memory technologies
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡県福岡市)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Performance Enhancement Technologies in III-V/Ge MOSFETs2013

    • Author(s)
      S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang and M. Takenaka
    • Organizer
      224th Fall meeting of the Electrochemical Society, ULSI Process Integration 8
    • Place of Presentation
      The Hilton San Francisco Hotel, San Francisco, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 低消費電力CMOSのため高移動度チャネルトランジスタ技術2013

    • Author(s)
      高木信一
    • Organizer
      第29回 (2013) 京都賞記念ワークショップ 先端技術部門「集積回路の発展50年とその未来-超高集積メモリ・省電力LSI に向けてー」
    • Place of Presentation
      国立京都際会館(京都府京都市)
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] III-V/Ge device engineering for CMOS photonics2013

    • Author(s)
      M. Takenaka and S. Takagi
    • Organizer
      8th international conference on processing and manufacturing of advanced materials (THERMEC2013)
    • Place of Presentation
      Rio Hotel, Las Vegas, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Ge Oxide Growth by Plasma Oxidation of Ge substrates through Al2O3 Layers2013

    • Author(s)
      R. Zhang
    • Organizer
      5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
    • Place of Presentation
      名古屋大学、愛知県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Ge p- and n-MOSFETの高電界領域での移動度劣化機構の解析 と原子層平坦GeOx/Ge界面による移動度の向上2013

    • Author(s)
      張睿
    • Organizer
      応用物理学会シリコンテクノロジー分科会第154回研究集会/電子情報通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      機械振興会館、東京都
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] High Mobility Ge MOSFETs using 0.7 nm EOT HfO2/Al2O3/GeOx/Ge Gate Stacks2013

    • Author(s)
      S. Takagi
    • Organizer
      6th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar - Atomically Controlled Processing for Ultralarge Scale Integration
    • Place of Presentation
      東北大学、宮城県
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] High Mobility Ge CMOS devices with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2013

    • Author(s)
      R. Zhang
    • Organizer
      2013年第60回 応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学、神奈川県
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Improvement of High Ns Mobility of Ge MOSFETs by Reducing GeOx/Ge Interface Roughness2013

    • Author(s)
      R. Zhang
    • Organizer
      2013年第60回 応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学、神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Mobility Degradation of Ge MOSFETs in High Ns Region due to Interface States inside Conduction and Valence Bands of Ge2013

    • Author(s)
      R. Zhang
    • Organizer
      2013年第60回 応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学、神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 酸化濃縮法Ge-On-Insulator層の薄膜化がMOS界面正孔移動度に与える効果2013

    • Author(s)
      忻宇飛
    • Organizer
      2013年第60回 応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学、神奈川県
    • Related Report
      2012 Annual Research Report
  • [Presentation] 異種材料(Si/Ge/化合物半導体)集積化技術2012

    • Author(s)
      高木信一
    • Organizer
      Electronic Journal第984回Technical Seminar
    • Place of Presentation
      東京
    • Year and Date
      2012-01-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces2012

    • Author(s)
      R.Zhang, P.-C.Huang, J.-C.Lin, M.Takenaka and S.Takagi
    • Organizer
      2012 International Electron Devices Meeting (IEDM)
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
  • [Presentation] MOS interface and channel engineering for high-mobility Ge/III-V CMOS2012

    • Author(s)
      S.Takagi, R.Zhang, S.-H Kim, N.Taoka, M.Yokoyama, J.-K.Suh, R.Suzuki, Y.Asakura, C.Zota and M.Takenaka
    • Organizer
      2012 International Electron Devices Meeting (IEDM)
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Invited
  • [Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R.Zhang, P.-C.Huang, M.Takenaka and S.Takagi
    • Organizer
      Symposium on 5th International SiGe, Ge, & Related Compounds : Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Honolulu, USA
    • Related Report
      2013 Final Research Report
  • [Presentation] III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS2012

    • Author(s)
      S.Takagi, S,-H, Kim, R.Zhang, M.Yokoyama, N.Taoka and M.Takenaka
    • Organizer
      2011 International Conference on Solid State Devices and Materials (SSDM 2011)
    • Place of Presentation
      国立京都国際会館、京都府
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Invited
  • [Presentation] High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2012

    • Author(s)
      R.Zhang, P.C.Huang, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      Symposium on VLSI technology
    • Place of Presentation
      Honolulu, USA
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
  • [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2012

    • Author(s)
      S.Takagi and M.Takenaka
    • Organizer
      13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
    • Place of Presentation
      Grenoble, France
    • Related Report
      2013 Final Research Report
  • [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits2012

    • Author(s)
      M. Takenaka
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
    • Place of Presentation
      沖縄青年会館、沖縄県
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 高移動度チャネルCMOSデバイス2012

    • Author(s)
      高木信一
    • Organizer
      応用物理学会シリコンテクノロジー分科会第152回研究集会
    • Place of Presentation
      産業技術総合研究所、東京都
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks2012

    • Author(s)
      R. Zhang
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学、愛媛県
    • Related Report
      2012 Annual Research Report
  • [Presentation] Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O32012

    • Author(s)
      R. Zhang
    • Organizer
      Symposium on 5th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Honolulu, USA
    • Related Report
      2012 Annual Research Report
  • [Presentation] MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks2012

    • Author(s)
      S. Takagi
    • Organizer
      Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics 10, Symposium E4 of the 222nd Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Honolulu, USA
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] High Mobility Channel CMOS Transistors - Beyond Silicon2012

    • Author(s)
      S. Takagi
    • Organizer
      2012 International Electron Devices Meeting (IEDM) tutorial
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Advanced Nano CMOS Platform using High Mobility Channel Materials2012

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      International Symposium on Secure-Life Electronics-Advanced Electronics and Information Systems for Quality Life and Society-
    • Place of Presentation
      東京
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Mobility CMOS Technologies using III-V/Ge Channels on Si platform2012

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      13th International Conference on Ultimate Integration on Silicon (ULIS 2012)
    • Place of Presentation
      Grenoble, France(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Mobility Ge n- and p-MOSFETs with 1nm EOT Al2O3/GeOx/Ge Gate stacks2012

    • Author(s)
      R.Zhang, N.Taoka, P.-C.Huang, M.Takenaka, S.Takagi
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      東京(受賞講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Non-Si Channel MOS Device Technologies in Nano-CMOS era2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      2011 Tsukuba Nanotechnology Symposium (TNS' 11)
    • Place of Presentation
      つくば、茨城(invited)
    • Year and Date
      2011-12-15
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Mobility Materials : III-V/Ge FETs (IEDM short course)2011

    • Author(s)
      S.Takagi
    • Organizer
      ternational Electron Devices Meeting (IEDM)
    • Place of Presentation
      Washington DC, USA(invite)
    • Year and Date
      2011-12-04
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Mobility Channel MOS Device Technologies toward Nano-CMOS era2011

    • Author(s)
      S.Takagi
    • Organizer
      IEEE Nanotechnology Materials and Device Conference (NMDC)
    • Place of Presentation
      Jeju, Korea (plenary)
    • Year and Date
      2011-10-21
    • Related Report
      2013 Final Research Report
  • [Presentation] High Mobility Channel MOS Device Technologies toward Nano-CMOS era (plenary talk)2011

    • Author(s)
      S.Takagi
    • Organizer
      IEEE Nanotechnology Materials and Device Conference (NMDC)
    • Place of Presentation
      Jeju, Korea(invited)
    • Year and Date
      2011-10-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] Channel Engineering for Advanced CMOS Devices (SSDM short course)2011

    • Author(s)
      S.Takagi
    • Organizer
      2011 International Conference on Solid state Devices and Materials (SSDM 2011)
    • Place of Presentation
      名古屋(invited)
    • Year and Date
      2011-09-27
    • Related Report
      2011 Annual Research Report
  • [Presentation] Non-Si材料チャネルMOSトランジスタの研究開発動向2011

    • Author(s)
      高木信一, 竹中充
    • Organizer
      日本学術振興会ナノプローブテクノロジー第167委員会第63回研究会
    • Place of Presentation
      神奈川(招待講演)
    • Year and Date
      2011-07-28
    • Related Report
      2011 Annual Research Report
  • [Presentation] プラスマ後酸化法による1 nm EOT Al2O3/GeOx/Geゲートスタックを用いた高移動度Ge pMOSFET2011

    • Author(s)
      張睿, 岩崎敬志, 田岡紀之, 竹中充, 高木信一
    • Organizer
      応用物理学会シリコンテクノロジー分科会第139回研究集会
    • Place of Presentation
      東京(招待講演)
    • Year and Date
      2011-07-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, N.Taoka, P.Huang, M.Takenaka and S.Takagi
    • Organizer
      International Electron Devices Meeting (IEDM)
    • Place of Presentation
      Washington DC., USA
    • Related Report
      2013 Final Research Report
  • [Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance2011

    • Author(s)
      S.Takagi, R.Zhang, N.Taoka and M.Takenaka
    • Organizer
      41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
    • Place of Presentation
      Arlington, VA, USA
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011

    • Author(s)
      J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      37th Device Research Conference (DRC)
    • Place of Presentation
      Santa Barbara, USA
    • Related Report
      2013 Final Research Report
  • [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge MOS interface Properties2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      17th Conference on "Insulating Films on Semiconductors"
    • Place of Presentation
      Grenoble, France
    • Related Report
      2013 Final Research Report
  • [Presentation] High Mobility Ge pMOSFETs with ~ 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka and S.Takagi
    • Organizer
      VLSI symp.
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Final Research Report
  • [Presentation] Advanced CMOS Technologies using III-V/Ge Channels2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      11th International Symposium on VLSI Technology, System and Applications (VLSI-TSA)
    • Place of Presentation
      Hsinchu, Taiwan(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Prospective and critical issues of III-V/Ge CMOS on Si platform2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      219th Electrochemical Society Meeting, Symposium E3 : International Symposiu on Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications -3
    • Place of Presentation
      Montreal, Canada(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Mobility Material Channel CMOS Technologies based on Heterogeneous Integration (Keynote Speech)2011

    • Author(s)
      S.Takagi, M.Takenaka
    • Organizer
      11th International Workshop on Junction Technology (IWJT2011)
    • Place of Presentation
      Kyoto, Japan(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Mobility Ge pMOSFETs with 1nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      Symposium on VLSI technology
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2011 Annual Research Report
  • [Presentation] Impact of GeOx Interfacial Layer Thickness of Al2O3/Ge HOS interface Properties2011

    • Author(s)
      R.Zhang, T.Iwasaki, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      7th Conference on Insulating Films on Semiconductor
    • Place of Presentation
      Grenoble, France
    • Related Report
      2011 Annual Research Report
  • [Presentation] Highly-Strained SGOI p-Channel MOSFETs Fabricated by Applying Ge Condensation Technique to Strained-SOI Substrates2011

    • Author(s)
      J.-K.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      37th Device Research Conference (DRC)
    • Place of Presentation
      Santa Barbara, CA, USA
    • Related Report
      2011 Annual Research Report
  • [Presentation] Mobility Enhancement of Strained-SGOI p-Channel MOSFETs by Applying Ge Condensation Technique to Strained-SOI Substrates2011

    • Author(s)
      J.Suh, R.Nakane, N.Taoka, M.Takenaka, S.Takagi
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形
    • Related Report
      2011 Annual Research Report
  • [Presentation] High Nobility Ge pMOSFETs with 1nm Thin EOT Al2O3/GeOx/Ge Gate stacks2011

    • Author(s)
      R.Zhang, N.Taoka, T.Iwasaki, M.Takenaka, S.Takagi
    • Organizer
      第72回応用物理学関係連合講演会
    • Place of Presentation
      山形
    • Related Report
      2011 Annual Research Report
  • [Presentation] (III-V/Ge)-On-Insulator CMOS Technology2011

    • Author(s)
      S.Takagi
    • Organizer
      37th IEEE International SOI Conference
    • Place of Presentation
      Tempe, Arizona, USA(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOS interface control technologies for III-V/Ge channel MOSFETs2011

    • Author(s)
      S.Takagi, R.Zhang, T.Hoshii, M.Takenaka
    • Organizer
      Symposium on High Dielectric Constant and other Dielectric Materials for Nanoeleectronics and Photonics 9, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Boston, Massachusetts, USA(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Device and integration technologies of III-V/Ge channel CMOS2011

    • Author(s)
      S.Takagi, M.Yokoyama, Y.-H.Kim, M.Takenaka
    • Organizer
      Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting
    • Place of Presentation
      Boston, Massachusetts, USA(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOS Interface Properties of Ge Gate Stacks based on Ge oxides and the Impact on MOS Device Performance2011

    • Author(s)
      S.Takagi, R.Zhang, N.Taoka, M.Takenaka
    • Organizer
      41th IEEE Semiconductor Interface Specialists Conference (SISC 2011)
    • Place of Presentation
      Arlington, VA, USA(invited)
    • Related Report
      2011 Annual Research Report
  • [Presentation] 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation2011

    • Author(s)
      R.Zhang, N.Taoka, P.Huang, M.Takenaka, S.Takagi
    • Organizer
      International Electron Devices Meeting (IEDM)
    • Place of Presentation
      Washington DC, DSA
    • Related Report
      2011 Annual Research Report
  • [Book] 2. III-V/Ge デバイス構造, 先端LSI 技術大系(GNC Tech. Vol.2)、第3章 将来技術2012

    • Author(s)
      高木信一
    • Publisher
      グローバルネット株式会社
    • Related Report
      2013 Final Research Report
  • [Book] 2. III-V/Ge デバイス構造”, 先端LSI技術大系(GNC Tech. Vol. 2)、第3章 将来技術2012

    • Author(s)
      高木信一
    • Total Pages
      9
    • Publisher
      グローバルネット株式会社
    • Related Report
      2012 Annual Research Report
  • [Book] Silicon-germanium (SiGe) nanostructures -Production, properties and applications in electronics (chapter 19)2011

    • Author(s)
      Shinichi Takagi
    • Total Pages
      29
    • Publisher
      Woodhead Publishing Limited
    • Related Report
      2011 Annual Research Report
  • [Book] Silicon-germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies, Silicon-germanium (SiGe) nanostructures -Production, properties and applications in electronics, chapter 19

    • Author(s)
      S.Takagi
    • Related Report
      2013 Final Research Report
  • [Remarks]

    • URL

      http://www.mosfet.k.u-tokyo.ac.jp/

    • Related Report
      2013 Final Research Report
  • [Remarks] 高木・竹中研究室

    • URL

      http://www.mosfet.k.u-tokyo.ac.jp/

    • Related Report
      2013 Annual Research Report

URL: 

Published: 2011-04-06   Modified: 2019-07-29  

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