Synthesis of high purity hBN crystals and realization for their new functions

• Project/Area Number: 23246116
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: TANIGUCHI Takashi 独立行政法人物質・材料研究機構, 先端材料プロセスユニット, グループリーダー (80354413)
• Co-Investigator(Kenkyū-buntansha): WATANABE Kenji 物質・材料研究機構, 光・電子材料ユニット 光電機能グループ, 主席研究員 (20343840) ; KAWAMURA Fumio 物質・材料研究機構, 先端材料プロセスユニット 超高圧グループ, 主任研究員 (80448092) ; MIYAKAWA Masashi 物質・材料研究機構, 超伝導物性ユニット強相関物質探索グループ, 主任研究員 (40552667) ; OBA Fumiyasu 京都大学, 大学院工学研究科 材料工学専攻, 准教授 (90378795) ; YAMADA Takatoshi (独)産業技術総合研究所, ナノチューブ応用研究センター, 主任研究員 (30306500) ; NAKAYAMA Atsuko 新潟大学, 研究推進機構 超域学術院, 准教授 (50399383)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥49,530,000 (Direct Cost: ¥38,100,000、Indirect Cost: ¥11,430,000); Fiscal Year 2013: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000); Fiscal Year 2012: ¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000); Fiscal Year 2011: ¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
• Keywords: 六方晶窒化ホウ素単結晶 / 遠紫外線発光 / グラフェン基板 / 六方晶窒化ホウ素 / 高圧合成 / グラフェンデバイス用基板 / フラックス法 / 結晶成長 / 反応性溶媒

Research Abstract

Purposes of this study are synthesis of high purity hBN crystals and realization for their new functions. Band gap of hBN crystal and effect of carbon impurity on intense band edge far-ultraviolet emission of hBN were experimentally clarified. For applications as substrates for graphene, function of hBN graphene layered structure as well as hBN MoS2 structures were investigated on the basis with international collaborations. Fundamental research to understand doping mechanism of large size mismatch system were carried out in the system of Ce doped cBN and AlN.

Research Products

• [Journal Article] Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state (2014)
  • Author(s): A.F.Young, J.D.Sanchez-Yamagishi, B.Hunt, S.H.Choi, K.Watanabe, T.Taniguchi, R.C.Ashoori, and P.Jarillo-Herrero
  • Journal Title: Nature Volume: 505 Issue: 7484 Pages: 528-532
  • DOI: 10.1038/nature12800
  • Peer Reviewed
• [Journal Article] Tunable Phonon Polaritons in Atomically Thin van der Waals Crystals of Boron Nitride (2014)
  • Author(s): S.Dai, Z.Fei, Q.Ma, A.S.Rodin, M.Wagner, A.S.McLeod, M.K.Liu, W.Gannett, W.Regan, K.Watanabe, T.Taniguchi, M.Thiemens, G.Dominguez, A.H.C.Neto, A.Zettl, F.Keilmann, P.Jarillo-Herrero, M.M.Fogler, and D.N.Basov
  • Journal Title: Science Volume: 343 Issue: 6175 Pages: 1125-1129
  • DOI: 10.1126/science.1246833
  • Peer Reviewed
• [Journal Article] Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal (2014)
  • Author(s): R.Ishikawa, A.R.Lupini, F.Oba, S.D.Findlay, N.Shibata, T.Taniguchi, K.Watanabe, H.Hayashi, T.Sakai, I.Tanaka, Y.Ikuhara, and S.J.Pennycook
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 3778-3778
  • DOI: 10.1038/srep03778
  • Peer Reviewed / Open Access
• [Journal Article] Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels (2014)
  • Author(s): A.Luican-Mayer, M.Kharitonov, G.Li, C.-P.Lu, I.Skachko, A.-M.B.Goncalves, K.Watanabe, T.Taniguchi, and E.Y.Andrei
  • Journal Title: Phys. Rev. Lett Volume: 112 Issue: 3 Pages: 36804-36804
  • DOI: 10.1103/physrevlett.112.036804
  • Peer Reviewed
• [Journal Article] Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films (2014)
  • Author(s): S.Sutar, P.Agnihotri, E.Comfort, T.Taniguchi, K.Watanabe, and L.Ung, Ji
  • Journal Title: Appl. Phys. Lett Volume: 104 Issue: 12 Pages: 122104-122104
  • DOI: 10.1063/1.4870067
  • Peer Reviewed
• [Journal Article] Local environment of silicon in cubic boron nitride (2013)
  • Author(s): H. Murata, T. Taniguchi, S. Hishita, T. Yamamoto, F. Oba and I. Tanaka
  • Journal Title: J. Appl. Phys. Volume: 114 Issue: 23 Pages: 233502-233502
  • DOI: 10.1063/1.4849015
  • Peer Reviewed
• [Journal Article] Functional Complex Point-Defect Structure in a Huge-Size-Mismatch System (2013)
  • Author(s): R. Ishikawa, N. Shibata, F. Oba, T. Taniguchi, SD. Findlay, I. Tanaka, Y. Ikuhara
  • Journal Title: Physical Review Letters Volume: 110[6] Issue: 6 Pages: 65504-65504
  • DOI: 10.1103/physrevlett.110.065504
  • Peer Reviewed
• [Journal Article] Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride (2013)
  • Author(s): I.Jo, M.T.Pettes, J.Kim, K.Watanabe, T.Taniguchi, Z.Yao, and L.Shi
  • Journal Title: Nano Letters Volume: 13 Issue: 2 Pages: 550-554
  • DOI: 10.1021/nl304060g
  • Peer Reviewed
• [Journal Article] Photovoltaic infrared photoresponse of the high-mobility graphene quan turn Hall system due to cyclotron resonance (2013)
  • Author(s): S. Masubuchi, M. Onuki, M. Arai, T. Yamaguchi, K. Watanabe, T. Taniguchi, T. Machida
  • Journal Title: Physical Review B Volume: 88 Issue: 12 Pages: 121402-121402
  • DOI: 10.1103/physrevb.88.121402
  • Peer Reviewed
• [Journal Article] Electrically tunable transverse magnetic focusing in graphene (2013)
  • Author(s): T.Taychatanapat, K.Watanabe, T.Taniguchi, P.Jarillo-Herrero
  • Journal Title: Nat. Phys Volume: 9[4] Issue: 4 Pages: 225-229
  • DOI: 10.1038/nphys2549
  • Peer Reviewed
• [Journal Article] One-dimensional electrical contact to a two-dimensional material (2013)
  • Author(s): L.Wang, I.Meric, P.Huang, Q.Gao, Y.Gao, H.Tran, T.Taniguchi, K.Watanabe, L.M.Campos, D.Muller, J.Guo, P.Kim, J.Hone, K.Shepard, C.Dean
  • Journal Title: Science Volume: 342 Issue: 6158 Pages: 614-617
  • DOI: 10.1126/science.1244358
  • Peer Reviewed
• [Journal Article] Massive Dirac Fermions and Hofstadter Butterfly in a van der Waals Heterostructure (2013)
  • Author(s): B.Hunt, J.D.Sanchez-Yamagishi, A.F.Young, M.Yankowitz, B.J.LeRoy, K.Watanabe, T.Taniguchi, P.Moon, M.Koshino, P.Jarillo-Herrero, and R.C.Ashoori
  • Journal Title: Science Volume: 340 Issue: 6139 Pages: 1427-1430
  • DOI: 10.1126/science.1237240
  • Peer Reviewed
• [Journal Article] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices (2013)
  • Author(s): C.R.Dean, L.Wang, P.Maher, C.Forsythe, F.Ghahari, Y.Gao, J.Katoch, M.Ishigami, P.Moon, M.Koshino, T.Taniguchi, K.Watanabe, K.L.Shepard, J.Hone, and P.Kim
  • Journal Title: Nature Volume: 497 Issue: 7451 Pages: 598-602
  • DOI: 10.1038/nature12186
  • Peer Reviewed
• [Journal Article] Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride (2013)
  • Author(s): F. Forster, A. Molina-Sanchez, S. Engels, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, and C. Stampfer
  • Journal Title: Phys. Rev. B Volume: 88 Issue: 8 Pages: 85419-85419
  • DOI: 10.1103/physrevb.88.085419
  • Peer Reviewed
• [Journal Article] Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride (2013)
  • Author(s): T. Yamaguchi, Y. Inoue, S. Masubuchi, S. Morikawa, M. Onuki, K. Watanabe, T. Taniguchi, R. Moriya, and T. Machida
  • Journal Title: Applied Physics Express Volume: 6 Issue: 7 Pages: 73001-73001
  • DOI: 10.7567/apex.6.073001
  • Peer Reviewed
• [Journal Article] Epitaxial growth of single-domain graphene on hexagonal boron nitride (2013)
  • Author(s): W. Yang, G. Chen, Z. Shi, C.-C. Liu, L. Zhang, G. Xie, M. Cheng, D. Wang, R. Yang, D. Shi, K. Watanabe, T. Taniguchi, Y. Yao, Y. Zhang, and G. Zhang
  • Journal Title: Nat. Mater Volume: 12 Issue: 9 Pages: 792-797
  • DOI: 10.1038/nmat3695
  • Peer Reviewed
• [Journal Article] Etched graphene quantum dots on hexagonal boron nitride, (2013)
  • Author(s): S. Engels, A. Epping, C. Volk, S. Korte, B. Voigtlander, K. Watanabe, T. Taniguchi, S. Trellenkamp, and C. Stampfer
  • Journal Title: Appl. Phys. Lett. Volume: 103 Issue: 7 Pages: 73113-73113
  • DOI: 10.1063/1.4818627
  • Peer Reviewed
• [Journal Article] Fabrication and Characterization of High-Mobility Graphene p--n--p Junctions Encapsulated by Hexagonal Boron Nitride (2013)
  • Author(s): S. Masubuchi, S. Morikawa, M. Onuki, K. Iguchi, K. Watanabe, T. Taniguchi, and T. Machida,
  • Journal Title: Jpn. J. Appl. Phys Volume: 52 Issue: 11R Pages: 110105-110105
  • DOI: 10.7567/jjap.52.110105
  • NAID: 210000143026
  • Peer Reviewed
• [Journal Article] Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure (2013)
  • Author(s): B. Hunt, J. D. Sanchez-Yamagishi, A. F. Young, T. Taniguchi, K. Watanabe, P. Moon, M. Koshino, P.Jarillo-Herrero, R. C. Ashoori
  • Journal Title: Science Volume: in press
  • Peer Reviewed
• [Journal Article] Fractal quantum Hall effect: Hofstadter’s butterfly in moir´e superlattices (2013)
  • Author(s): C. R. Dean, K.Watanabe, T.Taniguchi, P.Kim, et.al.,
  • Journal Title: Nature Volume: in press
  • Peer Reviewed
• [Journal Article] Quantum Hall Effect Screening and Layer-Polarized Insulating States in Twisted Bilayer Graphene (2012)
  • Author(s): J.Sanchez-Yamagishi, T.Taychatanapat, K.Watanabe, T.Taniguchi, A.Yacoby and P.Jarillo-Herrero
  • Journal Title: Phys. Rev. Lett Volume: 108[7] Issue: 7 Pages: 76601-1
  • DOI: 10.1103/physrevlett.108.076601
  • Peer Reviewed
• [Journal Article] Long-Wavelength Local Density of States Oscillations Near Graphene Step Edges (2012)
  • Author(s): J.Xue, J.Sanchez-Yamagishi, K.Watanabe, T.Taniguchi, P.Jarillo-Herrero and B.LeRoy
  • Journal Title: Phys. Rev. Lett Volume: 108[1] Issue: 1 Pages: 16801-1
  • DOI: 10.1103/physrevlett.108.016801
  • Peer Reviewed
• [Journal Article] Recombinant E8 fragments of human laminin isoforms support long-term culture of human pluripotent stem cells under defined and xeno-free culture conditions. (2012)
  • Author(s): Miyazaki, T., Futaki, S., Suemori, H., Taniguchi,Y., Kawasaki, M., Hayashi, M., Kumagai,H., Nakatsuji, N., Sekiguchi, K. and Kawase, E
  • Journal Title: Nature Communications Volume: 13 Issue: 1 Pages: 1236-1236
  • DOI: 10.1038/ncomms2243
  • Peer Reviewed
• [Journal Article] Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices (2012)
  • Author(s): A. Gustavo F.Garcia, M.Neumann, F.Amet, J.R.Williams, K.Watanabe, T.Taniguchi,
  • Journal Title: Nano Lett Volume: 12 Issue: 9 Pages: 4449-4454
  • DOI: 10.1021/nl3011726
  • Peer Reviewed
• [Journal Article] Boundary Scattering in Ballistic Graphene (2012)
  • Author(s): S. Masubuchi, K. Iguchi, T. Yamaguchi, M. Onuki, M. Arai, K. Watanabe, T. Taniguchi and T. Machida
  • Journal Title: Phys. Rev. Lett. Volume: 109 Issue: 3 Pages: 36601-1
  • DOI: 10.1103/physrevlett.109.036601
  • Peer Reviewed
• [Journal Article] Negligible Environmental Sensitivity of Graphene in a Hexagonal Boron Nitride/Graphene/h-BN Sandwich Structure (2012)
  • Author(s): L. Wang, Z. Chen, C. R. Dean, T. Taniguchi, K. Watanabe, L. E. Brus and J. Hone
  • Journal Title: ACS Nano Volume: ACS Nano Issue: 9 Pages: 9314-9319
  • DOI: 10.1021/nl301986q
  • Peer Reviewed
• [Journal Article] Synthesis of rhenium nitride crystals with MoS2 structure (2012)
  • Author(s): F. Kawamura, H. Yusa, T. Taniguchi
  • Journal Title: Applied Physics Letters Volume: 100 Issue: 25 Pages: 251910-251910
  • DOI: 10.1063/1.4729586
  • Peer Reviewed
• [Journal Article] Hunting for Monolayer Boron Nitride : Optical and Raman Signatures (2011)
  • Author(s): R.V.Gorbachev, I.Riaz, R.R.Nair, R.Jalil, L.Britnell, B.D.Belle, E.W.Hill, K.S.Novoselov, K.Watanabe, T.Taniguchi, A.K.Geim and P.Blake
  • Journal Title: Small Volume: 7[4] Issue: 4 Pages: 465-468
  • DOI: 10.1002/smll.201001628
  • Peer Reviewed
• [Journal Article] Exciton optical transitions in a hexagonal boron nitride single crystal (2011)
  • Author(s): Luc Museur
  • Journal Title: physica status solidi (RRL), Rapid Research Letters Volume: 5 Issue: 5-6 Pages: 214-216
  • DOI: 10.1002/pssr.201105190
  • Peer Reviewed
• [Journal Article] Tunable metal-insulator transition in double-layer graphene heterostructures (2011)
  • Author(s): L.A.Ponomarenko
  • Journal Title: Nature Physics Volume: 7 Issue: 12 Pages: 958-961
  • DOI: 10.1038/nphys2114
  • Peer Reviewed
• [Journal Article] Hot Carrier-Assisted Intrinsic Photoresponse in Graphene (2011)
  • Author(s): N.M.Gabor
  • Journal Title: Science Volume: 344 Issue: 6056 Pages: 648-652
  • DOI: 10.1126/science.1211384
  • Peer Reviewed
• [Journal Article] BN/Graphene/BN Transistors for RF Applications (2011)
  • Author(s): H.Wang
  • Journal Title: IEEE Electron Dvice Letters Volume: 32 Issue: 9 Pages: 1209-1211
  • DOI: 10.1109/led.2011.2160611
  • Peer Reviewed
• [Journal Article] Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride (2011)
  • Author(s): Jiamin Xue
  • Journal Title: Nature Materials Volume: 10 Issue: 4 Pages: 282-285
  • DOI: 10.1038/nmat2968
  • Peer Reviewed
• [Journal Article] Multicomponent fractional quantum Hall effect in grapheme (2011)
  • Author(s): C.R.Dean
  • Journal Title: Nature Physics Volume: 7 Issue: 9 Pages: 693-696
  • DOI: 10.1038/nphys2007
  • Peer Reviewed
• [Journal Article] Boron Nitride Substrates for High Mobility CVD Graphene (2011)
  • Author(s): W.Gannett
  • Journal Title: Appl.Phys.Lett Volume: 98 Issue: 24 Pages: 242105-3
  • DOI: 10.1063/1.3599708
  • Peer Reviewed
• [Journal Article] Quantum Hall Effect and Landau level crossing of Dirac fermions in trilayer graphene (2011)
  • Author(s): T.Taychatanapat
  • Journal Title: Nature Physics Volume: 7 Issue: 8 Pages: 621-624
  • DOI: 10.1038/nphys2008
  • Peer Reviewed
• [Journal Article] 窒化ホウ素単結晶の高圧合成 (2011)
  • Author(s): 谷口尚
  • Journal Title: 日本結晶成長学会誌 Volume: 38 Pages: 19-26
  • NAID: 10017094008
  • Peer Reviewed
• [Journal Article] Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application (2011)
  • Author(s): 渡邊賢司
  • Journal Title: International Journal of Applied Ceramic Technology Volume: 8 Issue: 5 Pages: 977-989
  • DOI: 10.1111/j.1744-7402.2011.02626.x
  • Peer Reviewed
• [Journal Article] Hexagonal boron nitride as a new ultraviolet luminescent material and its application-Fluorescence properties of hBN single-crystal powder (2011)
  • Author(s): 渡邊賢司
  • Journal Title: Diamond and Related Materials Volume: 20 Issue: 5-6 Pages: 849-852
  • DOI: 10.1016/j.diamond.2011.04.002
  • Peer Reviewed
• [Presentation] Band alignment of zinc-blende and chalcopyrite semiconductors : Effects of misfit dislocations (2014)
  • Author(s): F.Oba
  • Organizer: APS March Meeting 2014
  • Place of Presentation: Denver
  • Year and Date: 2014-03-03
  • Invited
• [Presentation] グラフェン/h-BNからの電界電子放出特性 (2014)
  • Author(s): 山田貴壽、増澤智昭、胡谷大志、岡野健、谷口尚
  • Organizer: 第11回真空ナノエレクトロニクスシンポジウム
  • Place of Presentation: 大阪大学
  • Invited
• [Presentation] Point defects in oxide and nitride semiconductors : Understanding and prediction toward material screening (2013)
  • Author(s): F.Oba
  • Organizer: MRS Fall Meeting
  • Place of Presentation: Boston
  • Year and Date: 2013-12-03
  • Invited
• [Presentation] 高圧合成法による高純度窒化ホウ素単結晶研究の現状と新しい応用展開 (2013)
  • Author(s): 渡邊賢司
  • Organizer: 第15回応用物理学会プラズマエレクトロニクス分科会新領域研究会
  • Place of Presentation: 名古屋
  • Year and Date: 2013-11-22
  • Invited
• [Presentation] Complex behavior of defects in oxide semiconductors : Insights from first-principles calculations (2013)
  • Author(s): F.Oba
  • Organizer: International Symposium on Compound Semiconductors 2013 (ISCS2013)
  • Place of Presentation: Kobe
  • Year and Date: 2013-05-21
  • Invited
• [Presentation] Synthesis of high purity hBN single crystals by using solvent growth process (2013)
  • Author(s): T.Taniguchi, K.Watanabe
  • Organizer: 5th Inter. Conf on Recent Progress in Graphene Res
  • Place of Presentation: Tokyo
  • Invited
• [Presentation] Luminescence image of cleaved crystal in hexagonal boron nitride grown by temperature gradient method (2013)
  • Author(s): 渡邊賢司
  • Organizer: 第32回電子材料シンポジウム
  • Place of Presentation: 滋賀県守山市
  • Invited
• [Presentation] Optical Properties of Boron Nitride Single Crystals (2013)
  • Author(s): K.Watanabe
  • Organizer: CLEO-PR 2013
  • Place of Presentation: 京都
  • Invited
• [Presentation] Synthesis of high purity hBN single crystals by using solvent growth process (2013)
  • Author(s): T.Taniguchi and K.Watanabe
  • Organizer: 5th International Conf on Recent Progress in Graphene Res
  • Place of Presentation: 東京工業大学
  • Invited
• [Presentation] Optical Properties of Boron Nitride Single Crystals (2013)
  • Author(s): K.Watanabe and T.Taniguchi
  • Organizer: CLEO-PR 2013
  • Place of Presentation: Kyoto international conferene center
  • Invited
• [Presentation] Synthesis of hBN single crystals at high pressure and ambient pressure, and their properties (2013)
  • Author(s): T.Taniguchi
  • Organizer: 17th International Symposium on Intercalation Compounds
  • Place of Presentation: Sendai International Center
• [Presentation] Pressure-induced structural-change in hBN coexisting with hydrogen gas at room temperature (2013)
  • Author(s): Atsuko Nakayama, Shotaro Taguchi, Shohei Mitsuya, Takashi Taniguchi, Satoshi Nakano, Ayako Ohmura, Fumihiro Ishikawa, Yuh Yamada
  • Organizer: 17th International Symposium on Intercalation Compounds
  • Place of Presentation: Sendai International Center
• [Presentation] 高純度窒化ホウ素単結晶の高圧下フラックス成長 (2012)
  • Author(s): 谷口 尚
  • Organizer: 第7回日本フラックス成長研究発表会
  • Place of Presentation: つくば
  • Year and Date: 2012-12-07
  • Invited
• [Presentation] Complex behavior of point defects in oxide and nitride semiconductors : Insights from density functional calculations (2012)
  • Author(s): F.Oba
  • Organizer: The 5th International Symposium on Designing, Processing and Properties of Advanced Engineering Materials (ISAEM-2012)
  • Place of Presentation: Toyohashi
  • Year and Date: 2012-11-08
  • Invited
• [Presentation] 酸化物・窒化物半導体における点欠陥の電子構造と機能 (2012)
  • Author(s): 大場史康
  • Organizer: 日本金属学会2012年秋期講演大会
  • Place of Presentation: 松山市
  • Year and Date: 2012-09-19
  • Invited
• [Presentation] 窒化ホウ素単結晶の高圧合成 (2012)
  • Author(s): 谷口 尚
  • Organizer: 第36回結晶成長討論会,日本結晶成長学会
  • Place of Presentation: 佐賀
  • Invited
• [Presentation] 高純度窒化ホウ素単結晶の高圧下フラックス成長 (2012)
  • Author(s): 谷口 尚
  • Organizer: 第7回日本フラックス成長研究発表会
  • Place of Presentation: 物質・材料研究機構（つくば市）
  • Invited
• [Presentation] 窒化ホウ素単結晶の高圧合成 (2012)
  • Author(s): 谷口 尚
  • Organizer: 第36回結晶成長討論会
  • Place of Presentation: 虹の松原ホテル （佐賀県、唐津市）
  • Invited
• [Presentation] 高純度超微粒cBN焼結体の高圧合成と切削工具への応用 (2012)
  • Author(s): 谷口 尚
  • Organizer: cBN&ダイヤモンド先進加工研究会専門委員会 第2回研究講演会
  • Place of Presentation: 埼玉大学東京ステーションカレッジ(東京）
  • Invited
• [Presentation] 窒化ホウ素単結晶の高圧合成と不純物制御 (2012)
  • Author(s): 谷口 尚
  • Organizer: 第53回高圧討論会
  • Place of Presentation: 大阪大学(豊中市）
• [Presentation] Impurity cotrol in high pressure synthesis of single crystals of boron nitride and diamond (2012)
  • Author(s): T.Taniguchi
  • Organizer: 50th European High Pressure Research Group Meeting
  • Place of Presentation: Tessaloniki (Greece)
• [Presentation] Near-band edge optical properties of hexagonal boron nitride (2012)
  • Author(s): A. Pierret,J. Barjon, L. Museur, A. Kanaev, T. Taniguchi, K. Watanabe, F. Ducastelle, A. Loiseau
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Hokkaido Univ. (Sapporo)
• [Presentation] Synthesis of hBN single crystals under high pressure and high temperature (2011)
  • Author(s): T.Taniguchi
  • Organizer: 日米セミナーNanoscale Transport Phenomena
  • Place of Presentation: Ise-Shima、Japan(招待講演)
  • Year and Date: 2011-12-14
• [Presentation] 高純度窒化ホウ素単結晶及び焼結体の高圧合成と機能発現 (2011)
  • Author(s): 谷口 尚
  • Organizer: 先進セラミックス第124委員会 第136回会議,日本学術振興会
  • Place of Presentation: 東京
  • Year and Date: 2011-06-02
  • Invited
• [Presentation] High purity boron nitride : synthesis under high pressure and latm, and their properties (2011)
  • Author(s): T.Taniguchi
  • Organizer: NDNC2011
  • Place of Presentation: Kunibiki Messe, Matsue, Japan(招待講演)
  • Year and Date: 2011-05-17
• [Presentation] 六方晶窒化ホウ素単結晶の光学特性とその応用 (2011)
  • Author(s): 渡邊賢司
  • Organizer: 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会
  • Place of Presentation: キャンパスイノベーションセンター(東京都)(招待講演)
  • Year and Date: 2011-04-22
• [Presentation] Synthesis of hBN single crystals under high pressure and high temperature (2011)
  • Author(s): T.Taniguchi
  • Organizer: 第7回日米セミナー Nanoscale Transport Phenomena, JSPS(Japan), NSF(USA), ONR (USA)
  • Place of Presentation: Ise,Shima
  • Invited
• [Presentation] High purity boron nitride : synthesis under high pressure and 1atm, and their properties (2011)
  • Author(s): T.Taniguchi
  • Organizer: NDNC2011
  • Place of Presentation: Matsue
  • Invited
• [Presentation] 高圧合成法による高純度窒化ホウ素単結晶研究の現状と新しい応用展開
  • Author(s): 渡邊賢司 谷口 尚
  • Organizer: 第15回応用物理学会プラズマエレクトロニクス分科会新領域研究会
  • Place of Presentation: KDX 名古屋駅前ビル名城大学名駅サテライト
  • Invited
• [Presentation] Band alignment of zinc-blende and chalcopyrite semiconductors: Effects of misfit dislocations
  • Author(s): F. Oba
  • Organizer: APS March Meeting 2014
  • Place of Presentation: Denver. USA
  • Invited
• [Presentation] Point defects in oxide and nitride semiconductors: Understanding and prediction toward material screening
  • Author(s): F.Oba
  • Organizer: MRS Fall Meeting
  • Place of Presentation: Boston USA
  • Invited
• [Presentation] 六方晶窒化ホウ素の単結晶高圧合成と光機能
  • Author(s): 谷口 尚
  • Organizer: 日本表面科学会 第79回表面科学研究会
  • Place of Presentation: 東京工業大学すずかけ台大学会館
  • Invited
• [Book] "Synthesis and Properties of Single Crystalline cBN and Its Sintered Body, In V.K.Sarin (Editor-in-Chief) & C.E. Nebel (Vol.Ed.), Comprehensive Hard Materials (vol.3) (ISBN: 9780080965277) (2014)
  • Author(s): T.Taniguchi
  • Publisher: Elsevier
• [Remarks]
  • URL: http://www.nims.go.jp/personal/BN_research/index-j_BNR.html
• [Remarks]
  • URL: http://www.nims.go.jp/personal/BN_research/
• [Patent(Industrial Property Rights)] 紫外線発光六方晶窒化ホウ素結晶体の製造方法 (2013)
  • Inventor(s): 谷口 尚、渡邊賢司、窪田陽一、津田 統
  • Industrial Property Rights Holder: 潮田資勝
  • Industrial Property Rights Type: 特許
  • Acquisition Date: 2013-05-02
• [Patent(Industrial Property Rights)] 高窒素含有遷移金属窒化物の製造方法及び高窒素含有 (2011)
  • Inventor(s): 川村史朗, 他
  • Industrial Property Rights Holder: 物質・材料研究機構
  • Industrial Property Number: 2011-155185
  • Filing Date: 2011-07-13