| Project/Area Number |
23246116
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TANIGUCHI Takashi 独立行政法人物質・材料研究機構, 先端材料プロセスユニット, グループリーダー (80354413)
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| Co-Investigator(Kenkyū-buntansha) |
WATANABE Kenji 物質・材料研究機構, 光・電子材料ユニット 光電機能グループ, 主席研究員 (20343840)
KAWAMURA Fumio 物質・材料研究機構, 先端材料プロセスユニット 超高圧グループ, 主任研究員 (80448092)
MIYAKAWA Masashi 物質・材料研究機構, 超伝導物性ユニット強相関物質探索グループ, 主任研究員 (40552667)
OBA Fumiyasu 京都大学, 大学院工学研究科 材料工学専攻, 准教授 (90378795)
YAMADA Takatoshi (独)産業技術総合研究所, ナノチューブ応用研究センター, 主任研究員 (30306500)
NAKAYAMA Atsuko 新潟大学, 研究推進機構 超域学術院, 准教授 (50399383)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥49,530,000 (Direct Cost: ¥38,100,000、Indirect Cost: ¥11,430,000)
Fiscal Year 2013: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2012: ¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2011: ¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
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| Keywords | 六方晶窒化ホウ素単結晶 / 遠紫外線発光 / グラフェン基板 / 六方晶窒化ホウ素 / 高圧合成 / グラフェンデバイス用基板 / フラックス法 / 結晶成長 / 反応性溶媒 |
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| Research Abstract |
Purposes of this study are synthesis of high purity hBN crystals and realization for their new functions. Band gap of hBN crystal and effect of carbon impurity on intense band edge far-ultraviolet emission of hBN were experimentally clarified. For applications as substrates for graphene, function of hBN graphene layered structure as well as hBN MoS2 structures were investigated on the basis with international collaborations. Fundamental research to understand doping mechanism of large size mismatch system were carried out in the system of Ce doped cBN and AlN.
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