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Study of lasing threshold reduction caused by electron spin polarization in the active region of laser diodes

Research Project

Project/Area Number 23310094
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionAoyama Gakuin University (2013)
Nara Institute of Science and Technology (2011-2012)

Principal Investigator

KOH Shinji  青山学院大学, 理工学部, 准教授 (50323663)

Co-Investigator(Renkei-kenkyūsha) KAWAGUCHI Hitoshi  奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (40211180)
IKEDA Kazuhiro  奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (70541738)
Project Period (FY) 2011-04-01 – 2014-03-31
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2011: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
Keywords円偏光レーザ発振 / スピン注入 / 半導体量子井戸 / GaAs(110) / InP(110) / スピン偏極 / スピン緩和 / スピン半導体レーザ / 低消費電力化 / 量子井戸
Research Abstract

Vertical cavity surface emitting lasers (VCSELs) driven by electrical spin injection have been investigated. We focused on the circularly polarized lasing and lasing threshold reduction caused by spin polarization in the active region of the VCSELs. We have investigated molecular beam epitaxy growth of Fe and FePt layers on GaAs(110) surfaces for the spin injection electrodes, and characterized the structures and magnetic properties of the layers. We succeeded in the spin injection into GaAs(110) quantum wells at low temperature. However, the degree of the circular polarization of the emission observed was about 5% which was unexpectedly low. A high degree of circular polarization, which was expected because of the long spin relaxation time of the electrons in GaAs(110) quantum wells, was not observed.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • Research Products

    (20 results)

All 2013 2012 2011 Other

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (15 results) (of which Invited: 3 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE2013

    • Author(s)
      Y. Yasuda, S. Koh, K. Ikeda, H. Kawaguchi
    • Journal Title

      J. Cryst. Growth

      Volume: 364 Pages: 95-100

    • DOI

      10.1016/j.jcrysgro.2012.11.039

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Circularly polarized lasing over wide wavelength range in spin-controlled Absorption [103/cm] (110) vertical-cavity surface-emitting laser2012

    • Author(s)
      S. Iba, S. Koh, and H. Kawaguchi
    • Journal Title

      Solid State Commun.

      Volume: 152 Issue: 16 Pages: 1518-1521

    • DOI

      10.1016/j.ssc.2012.06.009

    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of Electron Spin Relaxation Dynamics and Circularly Polarized Lasing in Semiconductor Lasers2011

    • Author(s)
      黄晋二、揖場聡、池田和浩、河口仁司
    • Journal Title

      Hyomen Kagaku

      Volume: 32 Issue: 12 Pages: 755-760

    • DOI

      10.1380/jsssj.32.755

    • NAID

      130004486621

    • ISSN
      0388-5321, 1881-4743
    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Correlation between Morphology and Electron Spin relaxation Time in GaAs/AlGaAs Quantum Wells on Slightly Misoriented GaAs(110) substrates2011

    • Author(s)
      S. Koh, K. Ikeda, and H. Kawaguchi
    • Journal Title

      J. Appl. Phys.

      Volume: 110 Issue: 4 Pages: 43516-43516

    • DOI

      10.1063/1.3622586

    • Related Report
      2013 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] Circularly Polarized Lasing in Spin-Controlled Vertical-Cavity Surface-Emitting Lasers2012

    • Author(s)
      S. Koh, S. Iba, K. Ikeda and H. Kawaguchi
    • Organizer
      International Conference of the Asian Union Magnetic Society (ICAUMS 2012)
    • Place of Presentation
      Nara, Japan
    • Year and Date
      2012-10-04
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] MBE法による InP(110)基板上 InGaAs/InAlAs量子井戸の結晶成長2012

    • Author(s)
      安田祐介、黄晋二、河口仁司
    • Organizer
      第73回応用物理学会学術講演会講演予稿集
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-11
    • Related Report
      2013 Final Research Report
  • [Presentation] GaAs(110)基板上の Fe及び FePtの成長2012

    • Author(s)
      阿野浩一郎、黄晋二、河口仁司
    • Organizer
      第73回応用物理学会学術講演会講演予稿集
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-11
    • Related Report
      2013 Final Research Report
  • [Presentation] Circularly polarized lasing in (110) quantum well based spin-laser2012

    • Author(s)
      S. Iba, S. Koh, K. Ikeda and H. Kawaguchi
    • Organizer
      SPIE NanoScience and Engineering
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2012-08-16
    • Related Report
      2013 Final Research Report 2012 Annual Research Report
    • Invited
  • [Presentation] (110)スピン面発光半導体レーザの室温円偏光発振特性2011

    • Author(s)
      揖場聡, 黄晋二, 池田和浩, 河口仁司
    • Organizer
      第16回半導体スピン工学の基礎と応用(PASPS-16)
    • Place of Presentation
      東京工業大学
    • Year and Date
      2011-11-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaAs/AlGaAs MQWの電子スピン緩和時間測定法に関する検討2011

    • Author(s)
      横田信英、池田和浩、片山健夫、黄晋二、河口仁司
    • Organizer
      秋季、第72回応用物理学会学術講演会講演予稿集
    • Place of Presentation
      山形
    • Year and Date
      2011-09-01
    • Related Report
      2013 Final Research Report
  • [Presentation] (110)スピン面発光半導体レーザの広帯域円偏光発振2011

    • Author(s)
      揖場聡、黄晋二、池田和浩、河口仁司
    • Organizer
      秋季、第72回応用物理学会学術講演会講演予稿集
    • Place of Presentation
      山形
    • Year and Date
      2011-09-01
    • Related Report
      2013 Final Research Report
  • [Presentation] GaAs/AlGaAs MQWの電子スピン緩和時間測定法に関する検討2011

    • Author(s)
      横田信英、池田和浩、片山健夫、黄晋二、河口仁司
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] (110)スピン面発光半導体レーザの広帯域円偏光発振2011

    • Author(s)
      揖場聡、黄晋二、池田和浩、河口仁司
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optically-pumped circularly polarized lasing in a (110) VCSEL with GaAs/AlGaAs QWs at room temperature2011

    • Author(s)
      S. Iba, S. Koh, K. Ikeda and H. Kawaguchi
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO 2011), JTuI92
    • Place of Presentation
      Baltimore Convention Center
    • Year and Date
      2011-05-03
    • Related Report
      2013 Final Research Report
  • [Presentation] Optically-pumped circularly polarized lasing in a (110) VCSEL with GaAs/AlGaAs QWs at room temperature2011

    • Author(s)
      S.Iba, S.Koh, K.Ikeda, H.Kawaguchi
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO2011)
    • Place of Presentation
      ボルチモア(米国)
    • Year and Date
      2011-05-03
    • Related Report
      2011 Annual Research Report
  • [Presentation] 光スピン注入 (110)GaAs量子井戸面発光半導体レーザの室温円偏光発振2011

    • Author(s)
      揖場聡、黄晋二、池田和浩、河口仁司
    • Organizer
      2011年(平成23年)春季、第58回応用物理学会関係連合講演会講演予稿集、27a-KM-7,p.10-124
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-27
    • Related Report
      2013 Final Research Report
  • [Presentation] Circularly Polarized Lasing in Spin-Controlled Vertical-Cavity Surface-Emitting Lasers

    • Author(s)
      S. Koh, S. Iba, K. Ikeda and H. Kawaguchi
    • Organizer
      International Conference of the Asian Union Magnetic Society
    • Place of Presentation
      奈良県奈良市
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] MBE法によるInP(110)基板上InGaAs/InAlAs量子井戸の結晶成長

    • Author(s)
      安田祐介、黄晋二、河口仁司
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAs(110)基板上のFe及びFePtの成長

    • Author(s)
      阿野浩一郎、黄晋二、河口仁司
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 不揮発性光メモリ、光記憶装置、ネットワークルータ2011

    • Inventor(s)
      河口仁司、池田和浩、黄晋二
    • Industrial Property Rights Holder
      河口仁司、池田和浩、黄晋二
    • Industrial Property Rights Type
      特許
    • Filing Date
      2011
    • Related Report
      2013 Final Research Report

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Published: 2011-04-06   Modified: 2019-07-29  

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