Growth of highly oriented h-BN single crystal by chemical vapor deposition method
| Project/Area Number |
23310096
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
WATANABE Kenji 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主席研究員 (20343840)
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|---|
| Co-Investigator(Renkei-kenkyūsha) |
TANIGUCHI Takashi 独立行政法人物質・材料研究機構, ナノスケール物質萌芽ラボ, グループリーダー (80354413)
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|---|
| Project Period (FY) |
2011-04-01 – 2014-03-31
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2013: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2012: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2011: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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|---|
| Keywords | 結晶工学 / 六方晶窒化ホウ素 / グラフェン / 原子層科学 / 結晶成長 / 気相成長 / 格子欠陥 / 電子デバイス / 原子層物理 / 配向性基板 / 気相成長法 |
|---|
| Research Abstract |
Hexagonal boron nitride (h-BN), which has a 2D-plane layered structure composed of nitrogen and boron atoms in sp2 bonding, is a proven and effective substrate for atomic layer materials including graphene, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps.However, to realize atomic layer devices, the single-crystalline growth technique for hBN is of great importance. In this study, we achieved high quality h-BN homoepitaxial growth on the bulk h-BN substrate by employing chemical vapor deposition methods with high-growth temperature.
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Report
(4 results)
Research Products
(80 results)
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[Journal Article] Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal2014
Author(s)
R.Ishikawa, A.R.Lupini, F.Oba, S.D.Findlay, N.Shibata, T.Taniguchi, K.Watanabe, H.Hayashi, T.Sakai, I.Tanaka, Y.Ikuhara, and S.J.Pennycook
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Journal Title
Scientific Reports
Volume: 4
Issue: 1
Pages: 3778-3778
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] One-dimensional electrical contact to a two-dimensional material2013
Author(s)
L.Wang, I.Meric, P.Huang, Q.Gao, Y.Gao, H.Tran, T.Taniguchi, K.Watanabe, L.M.Campos, D.Muller, J.Guo, P.Kim, J.Hone, K.Shepard, C.Dean
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Journal Title
Science
Volume: 342
Issue: 6158
Pages: 614-617
DOI
Related Report
Peer Reviewed
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[Journal Article] Epitaxial growth of single-domain graphene on hexagonal boron nitride2013
Author(s)
W. Yang, G. Chen, Z. Shi, C.-C. Liu, L. Zhang, G. Xie, M. Cheng, D. Wang, R. Yang, D. Shi, K. Watanabe, T. Taniguchi, Y. Yao, Y. Zhang, and G. Zhang
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Journal Title
Nat. Mater
Volume: 12
Issue: 9
Pages: 792-797
DOI
Related Report
Peer Reviewed
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[Journal Article] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices2013
Author(s)
C.R.Dean, L.Wang, P.Maher, C.Forsythe, F.Ghahari, Y.Gao, J.Katoch, M.Ishigami, P.Moon, M.Koshino, T.Taniguchi, K.Watanabe, K.L.Shepard, J.Hone, and P.Kim
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Journal Title
Nature
Volume: 497
Issue: 7451
Pages: 598-602
DOI
Related Report
Peer Reviewed
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