| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2013: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2012: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2011: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Research Abstract |
Hexagonal boron nitride (h-BN), which has a 2D-plane layered structure composed of nitrogen and boron atoms in sp2 bonding, is a proven and effective substrate for atomic layer materials including graphene, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps.However, to realize atomic layer devices, the single-crystalline growth technique for hBN is of great importance. In this study, we achieved high quality h-BN homoepitaxial growth on the bulk h-BN substrate by employing chemical vapor deposition methods with high-growth temperature.
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