| Project/Area Number |
23310097
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | NTT Basic Research Laboratories |
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Principal Investigator |
GOTOH Hideki 日本電信電話株式会社ＮＴＴ物性科学基礎研究所, 量子光物性研究部, 主幹研究員 (10393795)
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| Co-Investigator(Kenkyū-buntansha) |
TATENO Kouta 日本電信電話株式会社NTT 物性科学基礎研究所, 量子光物性研究部, 主任研究員 (20393796)
ONOMITSU Koji 日本電信電話株式会社NTT 物性科学基礎研究所, 機能物質科学研究部, 主任研究員 (30350466)
TAWARA Takehiko 日本電信電話株式会社NTT 物性科学基礎研究所, 量子光物性研究部, 主任研究員 (40393798)
SANADA Haruki 日本電信電話株式会社NTT 物性科学基礎研究所, 量子光物性研究部, 主任研究員 (50417094)
ZHANG Goquiang 日本電信電話株式会社NTT 物性科学基礎研究所, 量子光物性研究部, 主任研究員 (90402247)
SOGAWA Tetsuomi 日本電信電話株式会社NTT 物性科学基礎研究所, 所長 (70211993)
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| Co-Investigator(Renkei-kenkyūsha) |
YAMAGUCHI Hiroshi 日本電信電話株式会社NTT 物性科学基礎研究所, 量子電子物性研究部, 主幹研究員 (60374071)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2011: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
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| Keywords | 量子ドット / 量子コンピュータ / 弾性フォノン / 量子相関 / スピン光学 / メゾスコピック系 / 光物性 |
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| Research Abstract |
The purpose of this research project is to demonstrate spatially-distinguishable spin qubits in ordered semiconductor macro-atoms. The specific research subjects as follows: (1) Initialization, rotation and observation for spins (2) Transport of excitons with ballistic phonon waves (3) Fabricate highly-tailorable macro-atoms. First, we have achieved spin initialization using the polarization pumping method and polarization anisotropy in charged excitons in single macroatoms. Next, we have accomplished the spin rotation of arbitral direction utilizing an electron spin transport technique by ballistic phonon waves. No external magnetic fields were employed, which are completely different from previous conventional methods. We have also fabricated InP/InAs hetero-nanowires having very sharp heterointerfaces. Moreover, we have developed a technique to create high-purity nanowires with an original self-catalyst method.
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