Generation and detection of nuclear spin entanglement in semiconductor quantum dots
Project/Area Number |
23340091
|
Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Condensed matter physics I
|
Research Institution | The Institute of Physical and Chemical Research |
Principal Investigator |
ONO Keiji 独立行政法人理化学研究所, 河野低温物理研究室, 専任研究員 (00302802)
|
Co-Investigator(Renkei-kenkyūsha) |
AMAHA Shinichi 独立行政法人理化学研究所, 創発物性科学研究センター, 研究員 (90587924)
|
Project Period (FY) |
2011-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥20,670,000 (Direct Cost: ¥15,900,000、Indirect Cost: ¥4,770,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
|
Keywords | 半導体 / 量子ドット / スピン / 核スピン / エンタングルメント |
Research Abstract |
We observe a singlet spin blockade (SSB) in two-electron vertical double quantum dots where the single-electron transport is blocked for spin singlet electrons. In contrast to the conventional Pauli spin blockade with spin triplet electrons, this singlet spin blockade is observed under high magnetic field, where the doubly occupied states in one of the dots go beyond the singlet-triplet ground-state transition. The SSB region in Coulomb diamond measurements is in agreement with the two-electron excitation spectrum. A leakage current of 10 pA order is observed in SSB, consistent with the spin singlet lifetime due to random nuclear spin fluctuations. This results are published in Appl.Phys.Lett
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Report
(4 results)
Research Products
(48 results)
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[Presentation] Rashba spin-orbit interaction due to wavefunction penetration in In0.05Ga0.95As/GaAs quantum dots2011
Author(s)
S.M.Huang, A.O.Badrutdinov, L.Serra, T.Kodera, T.Nakaoka, N.Kumagai, Y.Arakawa, D.A.Tayurskii, K.Kono, K.Ono
Organizer
2011 International Conference on Solid State Devices and Materials (SSDM 2011)
Place of Presentation
Aichi Industry & Labor Center (WINC AICHI), Nagoya
Year and Date
2011-09-30
Related Report
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