Generation and detection of spin current in p-type nonmagnetic semiconductors
Project/Area Number |
23360002
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Tohoku University |
Principal Investigator |
|
Project Period (FY) |
2011-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥20,930,000 (Direct Cost: ¥16,100,000、Indirect Cost: ¥4,830,000)
Fiscal Year 2013: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2011: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
|
Keywords | スピントロニクス / 強磁性半導体 / スピン・ポンピング / 逆スピン・ホール効果 / 電流磁気効果 / 結晶成長 / スピンエレクトロニクス / 半導体物性 / MBE |
Research Abstract |
By using a ferromagnetic semiconductor (Ga,Mn)As/nonmagnetic semiconductor p-GaAs, we have succeeded to generate spin current in p-GaAs by spin pumping and to detect it by electrical voltage induced by the inverse spin Hall effect. We have shown that the voltage is also induced by the galvanomagnetic effects in (Ga,Mn)As, and established the method for separating the voltages of different origins. We have shown that the method is applicable to metallic systems such as Py/Pt bilayers.
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Report
(4 results)
Research Products
(29 results)