| Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2011: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
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| Research Abstract |
In this study, step-edge vertical-channel field-effect transistors (SVC-OFETs) were fabricated by nanoimprinting and wet printing processes and SVC-OFETs showed high cutoff frequencies of approximately 2 MHz by optimizing the device structure. This high performance of SVC-OFET is suitable to the manufacture of radio-frequency identification (RFID) tags. We demonstrate new active antenna elements for RFID tags in RF (raid frequency 13.56 MHz) region. High modulation more than 10 % was estimated by simulation and the fabricated RF-ID tags on a flexible substrate showed modulation factor of 5.6 %. Furthermore, we demonstrate that the SVC-OFET has advantages for wearable sensors for the future application fields.
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