New Growth Method for Bulk GaN using molecule-controlling method
| Project/Area Number |
23360008
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOUKITU Akinori 東京農工大学, 工学(系)研究科(研究院), 教授 (10111626)
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| Co-Investigator(Kenkyū-buntansha) |
KUMAGAI Yoshinao 東京農工大学, 大学院工学研究院, 教授 (20313306)
MURAKAMI Hisashi 東京農工大学, 大学院工学研究院, 准教授 (90401455)
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| Co-Investigator(Renkei-kenkyūsha) |
TOGASHI Rie 東京農工大学, 大学院工学研究院, 助教
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2011: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Keywords | 窒化ガリウム / 窒化物 / エピタキシャル成長 / 自立基板結晶 / HVPE / THVPE / 窒化物半導体 / 気相成長 / HVPE成長 / バルク結晶 / 原料分子制御 |
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| Research Abstract |
High quality crystal of GaN is a key material promising for energy-saving light emitting and high-power devices. In the study, a new source molecule, which was found out by the thermocynamic analysis and first principle calculation, was used as precursor for hydride vapoe phase epitaxy. Actually, the growth of GaN occured at 1200 C and the growth rate became more than 200 micron-m/hr.
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Report
(4 results)
Research Products
(69 results)
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[Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N22013
Author(s)
Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi, Murakami, Yoshinao Kumagai, Akinori Koukitu
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Journal Title
Japanese Journal of Applied Physics
Volume: 52
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[Journal Article] Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates2012
Author(s)
Toru Nagashima, Akira Hakomori, Takafumi Shimoda, Keiichiro Hironaka, Yuki Kubota, Toru Kinoshita, Reo Yamamoto, Kazuya Takada, Yoshinao Kumagai, Akinori Koukitu, Hiroyuki Yanagi
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Journal Title
Journal of Crystal Growth
Volume: (印刷中)
Issue: 1
Pages: 75-79
DOI
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Peer Reviewed
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[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications2014
Author(s)
T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Organizer
Conference on LED and Its Industrial Application ’13 (LEDIA ’13)
Place of Presentation
パシフィコ横浜, 神奈川県
Related Report
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[Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates2013
Author(s)
T.Kinoshita, T.Obata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu and Z.Sitar
Organizer
10th International Conference on Nitride Semiconductors (ICNS-10)
Place of Presentation
Washington, D.C., U.S.A.
Year and Date
2013-08-26
Related Report
Invited
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[Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN2013
Author(s)
Benjamin E.Gaddy, Zachary A.Bryan, Isaac S.Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, Ramon Collazo and Douglas L.Irving
Organizer
10th International Conference on Nitride Semiconductors (ICNS-10)
Place of Presentation
Washington, D.C., U.S.A.
Year and Date
2013-08-26
Related Report
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[Presentation] Fabrication of DUV-LEDs on AlN Substrates2013
Author(s)
T.Kinoshita, T. bata, T.Nagashima, H.Yanagi, J.Xie, R.Collazo, S.Inoue, Y.Kumagai, A.Koukitu, and Z.Sitar
Organizer
Conference on LED and Its Industrial Application '13 (LEDIA '13)
Place of Presentation
パシフィコ横浜, 神奈川県
Year and Date
2013-04-25
Related Report
Invited
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[Presentation] AlN/sapphire(0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
Author(s)
添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
Organizer
第72回応用物理学会学術講演会
Place of Presentation
山形大学小白川キャンパス
Year and Date
2011-08-30
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