| Project/Area Number |
23360008
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOUKITU Akinori 東京農工大学, 工学(系)研究科(研究院), 教授 (10111626)
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| Co-Investigator(Kenkyū-buntansha) |
KUMAGAI Yoshinao 東京農工大学, 大学院工学研究院, 教授 (20313306)
MURAKAMI Hisashi 東京農工大学, 大学院工学研究院, 准教授 (90401455)
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| Co-Investigator(Renkei-kenkyūsha) |
TOGASHI Rie 東京農工大学, 大学院工学研究院, 助教
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2011: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Keywords | 窒化ガリウム / 窒化物 / エピタキシャル成長 / 自立基板結晶 / HVPE / THVPE / 窒化物半導体 / 気相成長 / HVPE成長 / バルク結晶 / 原料分子制御 |
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| Research Abstract |
High quality crystal of GaN is a key material promising for energy-saving light emitting and high-power devices. In the study, a new source molecule, which was found out by the thermocynamic analysis and first principle calculation, was used as precursor for hydride vapoe phase epitaxy. Actually, the growth of GaN occured at 1200 C and the growth rate became more than 200 micron-m/hr.
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