Si/Geコアシェルナノワイヤへの位置制御ドーピングによる高移動度チャネルの形成

• Project/Area Number: 23360015
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: 深田 直樹 National Institute for Materials Science, 研究員 (90302207)
• Project Period (FY): 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2011: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)