| Budget Amount *help |
¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
Fiscal Year 2014: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2013: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2012: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2011: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Outline of Final Research Achievements |
We realized photonic crystals based on silicon carbide that is a wide gap semiconductor, and succeeded in expanding the application area of conventional photonic crystal made of silicon: (A) A photonic device that can process very high intensity light which is 100 times stronger than that can be processed in silicon device has been demonstrated because of complete suppression of two photon absorption. (B)A photonic circuit that can process a wide wavelength range of light from infrared to visible on a same chip has been achieved. In addition, temperature stability of SiC phtonic device has been demonstrated to be about 1/3 of silicon. The Q factor of the photonic crystal nanocavity realized in this study is still 14,000, but it is not limited by the original characteristics of the SiC material. I believe the Q factor can be improved in the future study.
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