| Budget Amount *help |
¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
Fiscal Year 2013: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2012: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2011: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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| Research Abstract |
To understand influence of electric charge and ultraviolet photons in plasma etching, investigation was performed by separating different types of incident particles. Without charged particles or UV photons, etching profile was found to be determined by angular distribution of incident beam. In case of etching with charged particles, it is important to understand trajectory bending of ion. Such bending occurs by electric field of ion sheath. We developed a method to measure sheath condition and predict ion trajectory based on the measurement. Effect of UV irradiation from plasma was investigated as etching damage using on-wafer UV sensor. Surface reaction simulation was developed considering electric charge and excited states.
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