Development of spintronics devices with using negative spin polarization materials

• Project/Area Number: 23360130
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tohoku University
• Principal Investigator: TSUNODA Masakiyo 東北大学, 工学(系)研究科(研究院), 准教授 (80250702)
• Co-Investigator(Kenkyū-buntansha): KOKADO Satoshi 静岡大学, 工学研究科, 准教授 (50377719)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000); Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2012: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000); Fiscal Year 2011: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
• Keywords: スピントロニクス / 磁性材料 / 磁気抵抗効果 / スピン分極 / 磁性 / 金属物性 / スピンエレクトロニクス

Research Abstract

We succeeded for the single phase synthesis of Mn4N and Co3FeN thin films that have isomorphic structure to Fe4N showing negative spin polarization. The Mn4N thin films exhibited perpendicular magnetic anisotropy. We constructed a theory for anisotropic magnetoresistance (AMR) effects, which takes into account the spin-orbit interaction and the crystal field splitting. Negative AMR ratio observed for the Co3FeN thin films indicated a possibility of them to be half-metals. Inverse tunnel magnetoresistance effects were observed for Fe4N-based magnetic tunnel junctions with a spinel tunnel barrier. High efficiency for spin current generation under ferromagnetic resonance was suggested for Fe4N/Pt bilayers by their large inverse spin Hall signals.

Research Products

• [Journal Article] Annealing Effects on Nitrogen Site Ordering and Anisotropic Magnetoresistance in Pseudo-Single-Crystal γ'-Fe_4N Films (2014)
  • Author(s): K. Kabara, M. Tsunoda, and S. Kokado
  • Journal Title: Applied Physics Express Volume: (in press) Pages: 7-7
  • Peer Reviewed
• [Journal Article] Anisotropic magnetoresistance effect of a strong ferromagnet : magnetization direction dependence in a model with crystal field (2014)
  • Author(s): S. Kokado and M. Tsunoda
  • Journal Title: Phys. Status Solidi C Volume: 11 Issue: 5-6 Pages: 1026-1032
  • DOI: 10.1002/pssc.201300736
  • Peer Reviewed
• [Journal Article] Determination of Thermal Stability of Magnetic Tunnel Junction Using Time-Resolved Single-Shot Measurement (2014)
  • Author(s): C. T. Chao, C. Y. Kuo, L. Horng, M. Tsunoda, M. Takahashi, and J. C. Wu
  • Journal Title: IEEE Transaction on Magnetics Volume: 50 Issue: 1 Pages: 1-4
  • DOI: 10.1109/tmag.2013.2276418
  • Peer Reviewed
• [Journal Article] Studies on Spintronics-Related Thin Films Using Synchrotron-Radiation-Based Mossbauer Spectroscopy (2013)
  • Author(s): K. Mibu, M. Seto, T. Mitsui, Y. Yoda, R. Masuda, S. Kitao, Y. Kobayashi, E. Suharyadi, M. A. Tanaka, M. Tsunoda, H. Yanagihara, and E. Kita
  • Journal Title: Hyperfine Interactions Volume: 217 Issue: 1-3 Pages: 127-135
  • DOI: 10.1007/s10751-012-0734-0
  • Peer Reviewed
• [Journal Article] Anisotropic Magnetoresistance Effect : General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio (2013)
  • Author(s): S. Kokado and M. Tsunoda
  • Journal Title: Advanced Materials Research Volume: 750-752 Pages: 750-752
  • DOI: 10.4028/www.scientific.net/amr.750-752.978
  • NAID: 120005317559
  • Peer Reviewed
• [Journal Article] Enhancement of Spin Pumping Efficiency in Fe_4N/Pt Bilayer Films (2013)
  • Author(s): S. Isogami, M. Tsunoda, M. Oogane, A. Sakuma, and M. Takahashi
  • Journal Title: Applied Physics Express Volume: 6 Issue: 6 Pages: 063004-063007
  • DOI: 10.7567/apex.6.063004
  • Peer Reviewed
• [Journal Article] The Enhancement of Magnetic Damping in Fe_4N Films with Increasing Thickness (2013)
  • Author(s): S. Isogami, M. Tsunoda, M. Oogane, A. Sakuma, and M. Takahashi
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 7R Pages: 073001-073003
  • DOI: 10.7567/jjap.52.073001
  • Peer Reviewed
• [Journal Article] Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N and Half-Metallic Ferromagnet : A Systematic Analysis (2012)
  • Author(s): Satoshi Kokado, Masakiyo Tsunoda, Kikuo Harigaya, Akimasa Sakuma
  • Journal Title: Journal of The Physical Society of Japan Volume: 81 Issue: 2 Pages: 024705-024705
  • DOI: 10.1143/jpsj.81.024705
  • Peer Reviewed
• [Journal Article] Negative Anisotropic Magnetoresistance in γ'-Fe_4N Epitaxial Films on SrTiO_s(OOl) Grown by Molecular Beam Epitaxy (2012)
  • Author(s): K. Ito, K. Kabara, H. Takahashi, T. Sanai, K. Toko, T. Suemasu, and M. Tsunoda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 6R Pages: 680011-680012
  • DOI: 10.1143/jjap.51.068001
  • Peer Reviewed
• [Journal Article] Coupling strength with off-axial external field in magnetic tunnel junction cells (2011)
  • Author(s): C. T. Chao, C. Y. Kuo, C. C. Chen, L. Horng, Y. J. Chang, T. Wu, S. Isogmi, M. Tsunoda, M. Takahashi, and J. C. Wu
  • Journal Title: Journal of Applied Physics Volume: 109 Issue: 7
  • DOI: 10.1063/1.3560047
  • Peer Reviewed
• [Journal Article] Uncompensated antiferromagnetic moments in Mn-Ir/FM (FM=Ni-Co, Co-Fe, Fe-Ni) bilayers : Compositional dependence and its origin (2011)
  • Author(s): Hirokazu Takahashi, Yohei Kota, Masakiyo Tsunoda, Tetsuya Nakamura, Kenji Kodama, Akimasa Sakuma, Migaku Takahashi
  • Journal Title: Journal of Applied Physics Volume: 110 Issue: 12
  • DOI: 10.1063/1.3672450
  • Peer Reviewed
• [Presentation] 強磁性体の異方性磁気抵抗効果 : 結晶場を考慮に入れた模型での磁化方向依存性 (2013)
  • Author(s): 古門聡士, 角田匡清
  • Organizer: 日本物理学会2013年秋季大会
  • Place of Presentation: 徳島
  • Year and Date: 2013-09-25
• [Presentation] Theoretical Study of Anisotropic Magnetoresistance Effect : Magnetization Direction Dependence in A System with Crystal Field (2013)
  • Author(s): S. Kokado and M. Tsunoda
  • Organizer: Donostia International Conference on Nanoscaled Magnetism and Applications
  • Place of Presentation: San Sebastian, Spain
  • Year and Date: 2013-09-09
• [Presentation] スピネル障壁層を用いたFe 4N基強磁性トンネル接合膜の作製 (2013)
  • Author(s): 角田匡清, 千葉亮一
  • Organizer: 日本磁気学会 第37回学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2013-09-03
• [Presentation] 擬単結晶(Fe,Co)_4N薄膜の作製とその異方性磁気抵抗効果 (2013)
  • Author(s): 角田匡清, 鹿原和樹
  • Organizer: 日本磁気学会 第37回学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2013-09-03
• [Presentation] 擬単結晶Fe_4N膜における磁気緩和の温度および結晶方位依存性 (2013)
  • Author(s): 磯上慎二, 角田匡清, 大兼幹彦, 佐久間昭正, 高橋 研
  • Organizer: 日本磁気学会 第37回学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2013-09-03
• [Presentation] Anisotropic Magnetoresistance Effect : General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio (2013)
  • Author(s): S. Kokado and M. Tsunoda
  • Organizer: The 3rd International Conference on Advanced Engineering Materials and Technology
  • Place of Presentation: Zhangjiajie, China
  • Year and Date: 2013-05-11
• [Presentation] Theoretical Study of Anisotropic Magnetoresistance Effect : Magnetization Direction Dependence in Ferromagnet with Crystal Field of Cubic Symmetry (2013)
  • Author(s): S. Kokado, M. Tsunoda, F. Yang, Y. Sakuraba, K. Takanashi, K. Harigaya, A. Sakuma
  • Organizer: American Physical Society March Meeting 2013
  • Place of Presentation: ボルチモア(米国)
  • Year and Date: 2013-03-18
• [Presentation] AnisotropicMagnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio (2013)
  • Author(s): S. Kokado and M. Tsunoda
  • Organizer: The 3rd International Conference on Advanced Engineering Materials and Technology
  • Place of Presentation: Zhangjiajie, China
• [Presentation] スピネル障壁層を用いたFe4N基強磁性トンネル接合膜の作製 (2013)
  • Author(s): 角田匡清，千葉亮一
  • Organizer: 日本磁気学会 第37回学術講演会
  • Place of Presentation: 札幌
• [Presentation] 擬単結晶(Fe,Co)4N薄膜の作製とその異方性磁気抵抗効果 (2013)
  • Author(s): 角田 匡清，鹿原 和樹
  • Organizer: 日本磁気学会 第37回学術講演会
  • Place of Presentation: 札幌
• [Presentation] 擬単結晶Fe4N膜における磁気緩和の温度および結晶方位依存性 (2013)
  • Author(s): 磯上慎二, 角田匡清, 大兼幹彦, 佐久間昭正, 高橋 研
  • Organizer: 日本磁気学会 第37回学術講演会
  • Place of Presentation: 札幌
• [Presentation] 強磁性体の異方性磁気抵抗効果：結晶場を考慮に入れた模型での磁化方向依存性 (2013)
  • Author(s): 古門聡士，角田匡清
  • Organizer: 日本物理学会 2013年秋季大会
  • Place of Presentation: 徳島
• [Presentation] Theoretical Study of Anisotropic Magnetoresistance Effect: Magnetization Direction Dependence in A System with Crystal Field (2013)
  • Author(s): S. Kokado and M. Tsunoda
  • Organizer: Donostia International Conference on Nanoscaled Magnetism and Applications
  • Place of Presentation: San Sebastian, Spain
• [Presentation] Theoretical Study of Anisotropic Magnetoresistance Effect: Magnetization Direction Dependence in Ferromagnet with Crystal Field of Cubic Symmetry (2013)
  • Author(s): S. Kokado, M. Tsunoda, F. Yang, Y. Sakuraba, K. Takanashi, K. Harigaya, A. Sakuma
  • Organizer: American Physical Society March Meeting 2013
  • Place of Presentation: ボルチモア（米国）
• [Presentation] 3d-Metal Nitrides for Spintronics (2012)
  • Author(s): M. Tsunoda
  • Organizer: The 2nd International Conference of AUMS
  • Place of Presentation: 奈良
  • Year and Date: 2012-10-02
  • Invited
• [Presentation] Fe_4N based magnetic tunnel junctions with Cu 3N barrier (2012)
  • Author(s): M. Tsunoda and R. Chiba
  • Organizer: The 2nd International Conference of AUMS
  • Place of Presentation: 奈良
  • Year and Date: 2012-10-02
• [Presentation] "Growth and Magnetic Properties of Pseudo-Single-Crystal Mn 4N Films (2012)
  • Author(s): M. Tsunoda and K. Kabara
  • Organizer: 2nd International Conference of AUMS
  • Place of Presentation: 奈良
  • Year and Date: 2012-10-02
• [Presentation] Generation of spin current from γ'-Fe_4N film (2012)
  • Author(s): S. Isogami, M. Oogane, A. Sakuma, and M. Tsunoda
  • Organizer: 2nd International Conference of AUMS
  • Place of Presentation: 奈良
  • Year and Date: 2012-10-02
• [Presentation] 強磁性体の異方性磁気抵抗効果の理論的研究 : 立方対称結晶場での磁化方向依存性 (2012)
  • Author(s): 古門聡士,角田匡清,Fujun Yang,桜庭裕弥, 高梨弘毅, 針谷喜久雄, 佐久間昭正
  • Organizer: 日本物理学会2012年秋季大会
  • Place of Presentation: 横浜
  • Year and Date: 2012-09-18
• [Presentation] Negative AMR : a necessary condition for half-metallicity (2012)
  • Author(s): S. Kokado, M. Tsunoda, K. Harigaya, and A. Sakuma
  • Organizer: IEEE International Magnetics Conference
  • Place of Presentation: バンクーバー(カナダ)
  • Year and Date: 2012-05-07
• [Presentation] Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet : A Systematic Analysis (2012)
  • Author(s): S. Kokado, M. T sunoda, K. Harigaya, and A. Sakuma
  • Organizer: American Physical Society March Meeting 2012
  • Place of Presentation: ボストン(米国)
  • Year and Date: 2012-02-29
• [Presentation] Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet : A Systematic Analysis (2012)
  • Author(s): S. Kokado, M. T sunoda, K. Harigaya, and A. Sakuma
  • Organizer: International Workshop for Group-IV Spintronics
  • Place of Presentation: 大阪
  • Year and Date: 2012-01-20
• [Presentation] Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet : A Systematic Analysis (2012)
  • Author(s): S.Kokado, M.Tsunoda, K.Harigaya, A.Sakuma
  • Organizer: International Workshop for Group-IV Spintronics
  • Place of Presentation: 大阪大学(大阪府)
  • Year and Date: 2012-01-20
• [Presentation] Negative AMR: a necessary condition for half-metallicity (2012)
  • Author(s): S. Kokado, M. Tsunoda, K. Harigaya, and A. Sakuma
  • Organizer: IEEE International Magnetics Conference
  • Place of Presentation: バンクーバー（カナダ）
• [Presentation] 強磁性体の異方性磁気抵抗効果の理論的研究：立方対称結晶場での磁化方向依存性 (2012)
  • Author(s): 古門聡士，角田匡清，Fujun Yang，桜庭裕弥，高梨弘毅，針谷喜久雄，佐久間昭正
  • Organizer: 日本物理学会2012年秋季大会
  • Place of Presentation: 横浜国立大学（神奈川県）
• [Presentation] 3d-Metal Nitrides for Spintronics (2012)
  • Author(s): M. Tsunoda
  • Organizer: The 2nd International Conference of AUMS
  • Place of Presentation: 奈良県新公会堂（奈良県）
  • Invited
• [Presentation] Fe4N based magnetic tunnel junctions with Cu3N barrier (2012)
  • Author(s): M. Tsunoda and R. Chiba
  • Organizer: The 2nd International Conference of AUMS
  • Place of Presentation: 奈良県新公会堂（奈良県）
• [Presentation] Growth and Magnetic Properties of Pseudo-Single-Crystal Mn4N Films (2012)
  • Author(s): M. Tsunoda and K. Kabara
  • Organizer: The 2nd International Conference of AUMS
  • Place of Presentation: 奈良県新公会堂（奈良県）
• [Presentation] Generation of spin current from γ'-Fe4N film (2012)
  • Author(s): S. Isogami, M. Oogane, A. Sakuma, and M. Tsunoda
  • Organizer: The 2nd International Conference of AUMS
  • Place of Presentation: 奈良県新公会堂（奈良県）
• [Presentation] γ'-Fe_4N 基強磁性トンネル接合用 Cu 3N 障壁膜の作製 (2011)
  • Author(s): 角田匡清, 稲葉竜也, 高橋研
  • Organizer: 日本磁気学会第35回学術講演会
  • Place of Presentation: 新潟
  • Year and Date: 2011-09-28
• [Presentation] 負のスピン分極を有するγ'-Fe 4N薄膜の磁気緩和定数 (2011)
  • Author(s): 磯上慎二, 角田匡清, 大兼幹彦, 佐久間昭正, 高橋研
  • Organizer: 日本磁気学会第35回学術講演会
  • Place of Presentation: 新潟
  • Year and Date: 2011-09-28
• [Presentation] γ'-Fe_4N基強磁性トンネル接合用Cu_3N障壁膜の作製 (2011)
  • Author(s): 角田匡清, 稲葉竜也, 高橋研
  • Organizer: 日本磁気学会第35回学術講演会
  • Place of Presentation: ときメッセ(新潟県)
  • Year and Date: 2011-09-28
• [Presentation] 負のスピン分極を有するγ'-Fe_4N薄膜の磁気緩和定数 (2011)
  • Author(s): 磯上慎二,角田匡清, 大兼幹彦, 佐久間昭正, 高橋研
  • Organizer: 日本磁気学会第35回学術講演会
  • Place of Presentation: ときメッセ(新潟県)
  • Year and Date: 2011-09-28
• [Presentation] 種々の強磁性体の異方性磁気抵抗効果の理論的研究 (2011)
  • Author(s): 古門聡士, 角田匡清, 針谷喜久雄, 佐久間昭正
  • Organizer: 日本物理学会2011年秋季大会
  • Place of Presentation: 富山
  • Year and Date: 2011-09-21
• [Presentation] 種々の強磁性体の異方性磁気抵抗効果の理論的研究 (2011)
  • Author(s): 古門聡士, 角田匡清, 針谷喜久雄, 佐久間昭正
  • Organizer: 日本物理学会2011年秋季大会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2011-09-21
• [Remarks]
  • URL: http://www.ecei.tohoku.ac.jp/ecei_web/Laboratory/takahashi_j_index.html