High-Quality Formation of Strained-Ge-on-Insulator for Ultrahigh-Speed Transistor Application

• Project/Area Number: 23360138
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: SADOH Taizoh 九州大学, システム情報科学研究科(研究院, 准教授 (20274491)
• Co-Investigator(Kenkyū-buntansha): MIYAO Masanobu 九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000); Fiscal Year 2013: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000); Fiscal Year 2012: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000); Fiscal Year 2011: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
• Keywords: 集積回路 / 結晶成長 / トランジスタ / 半導体 / 溶融成長

Research Abstract

To achieve ultrahigh-speed transistors, which can be merged with large-scale integrated circuits (LSIs), techniques for formation of high-quality strained Ge on insulator has been developed. Here, SiGe-mixing-triggered rapid-melting growth, insulating-film-induced local-strain introduction, and impurity-doping processes are investigated. These techniques facilitate formation of ultrahigh-sped Ge-on-insulator transistors for advanced LSIs.

Research Products

• [Journal Article] (111)-oriented large-grain (≥50 μm) Ge crystals directly formed on flexible plast ic substrate by gold-induced layer-exchange crystallization (2014)
  • Author(s): J. -H. Park, M. Miyao, T. Sadoh
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 2 Pages: 020302-020302
  • DOI: 10.7567/jjap.53.020302
  • Peer Reviewed
• [Journal Article] Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization (2014)
  • Author(s): T. Sadoh, M. Kurosawa, K. Toko, and M. Miyao
  • Journal Title: Thin Solid Films Volume: 557 Pages: 135-138
  • DOI: 10.1016/j.tsf.2013.08.127
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Laterally-Graded Doping into Ge-on-Insulator by Combination of Ion-Implantation and Rapid-Melting Growth (2013)
  • Author(s): R. Matsumura, Mohammad Anisuzzaman, H. Yokoyama, T. Sadoh, and M. Miyao
  • Journal Title: ECS Solid State Letters Volume: Vol.2, No.7 Issue: 7 Pages: 58-60
  • DOI: 10.1149/2.002307ssl
  • Peer Reviewed
• [Journal Article] Orientation-Control of Ge-Stripes-on-Insulator by Narrowing in Rapid-Melting Growth from Si(111) Seed (2013)
  • Author(s): M. Anisuzzaman, S. Muta, M. Takahashi, Abdul Manaf Hashim, and T. Sadoh
  • Journal Title: ECS Solid State Letters Volume: Vol.2, No.9 Issue: 9 Pages: 76-78
  • DOI: 10.1149/2.008309ssl
  • Peer Reviewed
• [Journal Article] Atomically-Coherent-Coalescence of Two Growth-Fronts in Ge Stripes on Insulator by Rapid-Melting Lateral- Crystallization (2013)
  • Author(s): M. Kurosawa, K. Toko, T. Sadoh, I. Mizushima, and M. Miyao
  • Journal Title: ECS Journal of Solid State Science and Technology Volume: Vol.2, No.3 Issue: 3 Pages: 54-57
  • DOI: 10.1149/2.005303jss
  • Peer Reviewed
• [Journal Article] Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (～ 250℃) (2013)
  • Author(s): J. -H. Park, T. Suzuki, M. Kurosawa, M. Miyao, T. Sadoh
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 8
  • DOI: 10.1063/1.4819015
  • Peer Reviewed
• [Journal Article] Effects of dose on activation characteristics of P in Ge (2012)
  • Author(s): M. Anisuzzaman and T. Sadoh
  • Journal Title: Thin Solid Films Volume: Vol.520 Issue: 8 Pages: 3255-3258
  • DOI: 10.1016/j.tsf.2011.10.076
  • Peer Reviewed
• [Journal Article] Enhancement of SiN-Induced Compressive and Tensile Strains in Si Free-Standing Microstructures by Modulation of SiN Network Structures (2012)
  • Author(s): T.Sadoh, M.Kurosawa, A.Heya, N.Matsuo, M.Miyao
  • Journal Title: Thin Solid Films Volume: 520 Issue: 8 Pages: 3276-3278
  • DOI: 10.1016/j.tsf.2011.10.088
  • Peer Reviewed
• [Journal Article] Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template (2012)
  • Author(s): H. Yokoyama, K. Toko, T. Sadoh, and M. Miyao
  • Journal Title: Applied Physics Letters Volume: Vol.100 Issue: 9
  • DOI: 10.1063/1.3691258
  • Peer Reviewed
• [Journal Article] Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth (2012)
  • Author(s): M. Kurasawa, et al.
  • Journal Title: Applied Physics Letters Volume: 100 Issue: 17
  • DOI: 10.1063/1.4705733
  • Peer Reviewed
• [Journal Article] Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform (2012)
  • Author(s): Abdul Manaf Hashim, Mohamad Anisuzzaman, S. Muta, T. Sadoh, and M. Miyao
  • Journal Title: Japanese Journal of Applied Physics Volume: Vol.51 Issue: 6S Pages: 06FF04-06FF04
  • DOI: 10.1143/jjap.51.06ff04
  • NAID: 210000140769
  • Peer Reviewed
• [Journal Article] Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template (2012)
  • Author(s): H.Yokoyama, rt al
  • Journal Title: Applied Physics Letters Volume: 100
  • Peer Reviewed
• [Journal Article] Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100),(110) and (111) Ge networks on insulators (2011)
  • Author(s): I. Mizushima, K.Toko, Y. Ohta, T. Sakane, T. Sadoh, and M. Miyao
  • Journal Title: Applied Physics Letters Volume: Vol. 98, No.182107-1-3 Issue: 18
  • DOI: 10.1063/1.3586259
  • Peer Reviewed
• [Journal Article] Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (111) micro-seeds (2011)
  • Author(s): T. Sakane, K. Toko, T. Tanaka, T. Sadoh, M. Miyao
  • Journal Title: Solid-State Electronics Volume: Vol.60 Issue: 1 Pages: 22-25
  • DOI: 10.1016/j.sse.2011.01.037
  • Peer Reviewed
• [Journal Article] Growth-direction-dependent characteristics of Ge-on-insulator by Si - Ge mixing triggered melting growth (2011)
  • Author(s): Y. Ohta, T. Tanaka, K. Toko, T. Sadoh, M. Miyao
  • Journal Title: Solid-State Electronics Volume: Vol.60 Issue: 1 Pages: 18-21
  • DOI: 10.1016/j.sse.2011.01.039
  • Peer Reviewed
• [Journal Article] Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization (2011)
  • Author(s): M.Kurosawa, N.Kawabata, R.Kato, T.Sadoh, M.Miyao
  • Journal Title: ECS Transactions Volume: 35 Issue: 5 Pages: 51-54
  • DOI: 10.1149/1.3570776
  • Peer Reviewed
• [Journal Article] Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth (2011)
  • Author(s): H. Yokoyama, Y. Ohta, K. Toko, T. Sadoh, and M. Miyao
  • Journal Title: ECS Transactions, The Electrochemical Society Volume: Vol.35, No.5 Issue: 5 Pages: 55-60
  • DOI: 10.1149/1.3570777
  • Peer Reviewed
• [Journal Article] Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth (2011)
  • Author(s): K. Toko, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao
  • Journal Title: Applied Physics Letters Volume: Vol.99 Issue: 3
  • DOI: 10.1063/1.3611904
  • NAID: 120005133110
  • Peer Reviewed
• [Journal Article] Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators (2011)
  • Author(s): I.Mizushima, et al
  • Journal Title: Applied Physics Letters Volume: 98
  • Peer Reviewed
• [Journal Article] Chip-size formation of high-mobility Ge strips on SiN films by coolingrate controlled rapid-melting growth (2011)
  • Author(s): K.Toko, et al
  • Journal Title: Applied Physics Letters Volume: 99
  • Peer Reviewed
• [Presentation] (Invited) Orientation-Controlled Large-Grain SiGe Crystal on Flexible Substrate by Low -Temperature Metal-Induced Crystallization (2014)
  • Author(s): T. Sadoh, J.-H. Park, and M. Miyao
  • Organizer: 7th International WorkShop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: 仙台
  • Invited
• [Presentation] Recent Progress of Rapid- Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator (2013)
  • Author(s): T. Sadoh and M. Miyao
  • Organizer: 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
  • Place of Presentation: Sendai
  • Invited
• [Presentation] (Invited) Low-Temperature Metal-Induced Crystallization of Orientation-Controlled SiGe on Insulator for Flexible Electronics (2013)
  • Author(s): T. Sadoh, J.-H. Park, M. Kurosawa, and M. Miyao
  • Organizer: The Electrochemical Society, 224th ECS Meeting
  • Place of Presentation: San Francisco, USA
  • Invited
• [Presentation] Formation of Orientation-Controlled Thin (~50 nm) Ge(111)-on-Insulator by Rapid- Melting Growth Combined with Narrow-Striping (2013)
  • Author(s): S. Muta, M. Anisuzzaman, .M.Hashim, and T. Sadoh
  • Organizer: 26th International Microprocesses and Nanotechnology Conference
  • Place of Presentation: 札幌
• [Presentation] Narrowing-Induced Orientation-Stabilization in Rapid-Melting Growth of Ge-on- Insulator (2013)
  • Author(s): S. Muta, M. Anisuzzaman, A.M.Hashim, and T. Sadoh
  • Organizer: International Conference in Asia 2013, IUMRS-ICA
  • Place of Presentation: Bangalore, India
• [Presentation] Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator (2013)
  • Author(s): T. Sadoh
  • Organizer: 6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
  • Place of Presentation: 仙台
  • Invited
• [Presentation] Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform (2011)
  • Author(s): M.Kurosawa, et al
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Advanced Hetero-epitaxial Growth based on SiGe for Multifunctional Devices (2011)
  • Author(s): M. Miyao, T. Sadoh, and K. Hamaya
  • Organizer: 15th International Conference on Thin Films 2011, ICTF-15, 11/8
  • Place of Presentation: Kyoto
  • Invited