High-Quality Formation of Strained-Ge-on-Insulator for Ultrahigh-Speed Transistor Application
| Project/Area Number |
23360138
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
SADOH Taizoh 九州大学, システム情報科学研究科(研究院, 准教授 (20274491)
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| Co-Investigator(Kenkyū-buntansha) |
MIYAO Masanobu 九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
Fiscal Year 2013: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2012: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2011: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
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| Keywords | 集積回路 / 結晶成長 / トランジスタ / 半導体 / 溶融成長 |
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| Research Abstract |
To achieve ultrahigh-speed transistors, which can be merged with large-scale integrated circuits (LSIs), techniques for formation of high-quality strained Ge on insulator has been developed. Here, SiGe-mixing-triggered rapid-melting growth, insulating-film-induced local-strain introduction, and impurity-doping processes are investigated. These techniques facilitate formation of ultrahigh-sped Ge-on-insulator transistors for advanced LSIs.
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Report
(4 results)
Research Products
(28 results)
