Research on interface stabilization of diamond junction for developing practical device applications

• Project/Area Number: 23360143
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: TOKUYUKI Teraji 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (50332747)
• Project Period (FY): 2011-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000); Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2012: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000); Fiscal Year 2011: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
• Keywords: ダイヤモンド / ショットキーダイオード / 高耐圧 / 高温耐性 / 界面輸送特性 / 電子・電気材料 / 低消費電力 / ダイオード

Research Abstract

Device fabrication procedure of diamond Schottky barrier diodes (SBD) for high voltage operation was investigated. By utilizing tungsten carbide as SBD metal, thermally stable device operation was obtained in the temperature range below 600K. Post annealing of SBD metals is found to be efficient for stabilizing the interface.For the purpose of improving SBD performance, growth condition that satisfies both higher crystalline quality and thicker diamond film growth was explored. Then suppression of substrate etching is crucial for diamond growth on highly boron doped substrate using higher microwave power density.

Research Products

• [Journal Article] Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces (2014)
  • Author(s): J. Michl, T. Teraji, S. Zaiser, I. Jakobi, G. Waldherr, F. Dolde, P. Neumann, M. W. Doherty, N. B. Manson, J. Isoya, J. Wrachtrup
  • Journal Title: App. Phys. Lett Volume: 104 Issue: 10 Pages: 102407-102407
  • DOI: 10.1063/1.4868128
  • Peer Reviewed
• [Journal Article] Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces (2014)
  • Author(s): T. Teraji, Y. Koide, and T. Ito
  • Journal Title: Thin Solid Films Volume: 557 Pages: 241-241
  • DOI: 10.1016/j.tsf.2013.11.132
  • Peer Reviewed
• [Journal Article] Isotopic enrichment of diamond by microwave plasma chemical vapor deposition with high carbon conversion efficiency (2014)
  • Author(s): T. Teraji
  • Journal Title: Thin Solid Films Volume: 557 Pages: 231-231
  • DOI: 10.1016/j.tsf.2014.01.018
  • Peer Reviewed
• [Journal Article] Improved depth resolution of secondary ion mass spectrometry profiles in diamond : A quantitative analysis of the delta-doping (2014)
  • Author(s): A. Fiori, F. Jomard, T. Teraji, G. Chicot, and E. Bustarret
  • Journal Title: Thin Solid Films Volume: 557 Pages: 222-226
  • DOI: 10.1016/j.tsf.2013.10.076
  • Peer Reviewed
• [Journal Article] Strongly coupled diamond spin qubits by molecular nitrogen implantation (2013)
  • Author(s): T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, and J. Isoya
  • Journal Title: Phys. Rev. B Volume: 88 Issue: 20 Pages: 201201-201201
  • DOI: 10.1103/physrevb.88.201201
  • Peer Reviewed
• [Journal Article] Extending spin coherence times of diamond qubits by high-temperature annealing (2013)
  • Author(s): T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, and J. Isoya
  • Journal Title: Phys. Rev. B Volume: 88 Issue: 7 Pages: 75206-75206
  • DOI: 10.1103/physrevb.88.075206
  • Peer Reviewed
• [Journal Article] Detecting and Polarizing Nuclear Spins with Double Resonance on a Single Electron Spin (2013)
  • Author(s): P. London, J. Scheuer, J.-M. Cai, I. Schwarz, A. Retzker, M. B. Plenio, M. Katagiri, T. Teraji, S. Koizumi, J. Isoya, R. Fischer, L. P. McGuinness, B. Naydenov, and F. Jelezko
  • Journal Title: Phys. Rev. Lett Volume: 111 Issue: 6 Pages: 67601-67601
  • DOI: 10.1103/physrevlett.111.067601
  • Peer Reviewed
• [Journal Article] Experimental Implementation of Assisted QuantumAdiabatic Passage in a Single Spin (2013)
  • Author(s): J. Zhang, J. H. Shim, I. Niemeyer, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and D. Suter
  • Journal Title: Phys. Rev. Lett Volume: 110 Issue: 24 Pages: 240501-240501
  • DOI: 10.1103/physrevlett.110.240501
  • Peer Reviewed
• [Journal Article] Effective use of source gas for diamond growth with isotopic enrichment (2013)
  • Author(s): T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya
  • Journal Title: Appl. Phys. Exp Volume: 6 Issue: 5 Pages: 55601-55601
  • DOI: 10.7567/apex.6.055601
  • NAID: 10031174340
  • Peer Reviewed
• [Journal Article] Synchronized B and 13C Diamond Delta Structures for an Ultimate In-depth Chemical Characterization (2013)
  • Author(s): A. Fiori, F. Jomard, T. Teraji, S. Koizumi, J. Isoya, E. Gheeraert, and E. Bustarret
  • Journal Title: Appl. Phys. Exp. Volume: 6 Issue: 4 Pages: 45801-45801
  • DOI: 10.7567/apex.6.045801
  • NAID: 10031166438
  • Peer Reviewed
• [Journal Article] Broadband Excitation by Chirped Pulses : Application to Single Electron Spins in Diamond (2013)
  • Author(s): I. Niemeyer, J. H Shim, J. Zhang, D. Suter, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and F. Jelezko
  • Journal Title: New Journal of Physics Volume: 15 Issue: 3 Pages: 33027-33027
  • DOI: 10.1088/1367-2630/15/3/033027
  • Peer Reviewed
• [Journal Article] High quality p-type chemical vapor deposited {111}-oriented diamonds : Growth and fabrication of related electrical devices (2012)
  • Author(s): A. Lazea, Y. Garino, T. Teraji, S. Koizumi
  • Journal Title: phys. stat. sol. (a) Volume: 209 Issue: 10 Pages: 1978-1981
  • DOI: 10.1002/pssa.201228162
  • Peer Reviewed
• [Journal Article] Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors (2012)
  • Author(s): M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez and Y. Koide
  • Journal Title: Jpn. J. Appl. Phys Volume: 51 Issue: 9R Pages: 90115-90115
  • DOI: 10.1143/jjap.51.090115
  • Peer Reviewed
• [Journal Article] Chemical Vapor Deposition of 12c Isotopically Enriched Polycrystalline Diamond (2012)
  • Author(s): T. Teraji, K. Watanabe, T. Taniguchi 他4名
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51巻 Issue: 9R Pages: 90104-90104
  • DOI: 10.1143/jjap.51.090104
  • NAID: 210000072771
  • Peer Reviewed
• [Journal Article] Localized mid-gap-states limited reverse current of diamond Schottky diodes (2012)
  • Author(s): T. Teraji, M.Y. Liao and Y. Koide
  • Journal Title: J. Appl. Phys Volume: 111 Issue: 10 Pages: 1045031-7
  • DOI: 10.1063/1.4712437
  • Peer Reviewed
• [Journal Article] Long coherence time of spin qubits in 12C enriched polycrystalline chemical vapor deposition diamond (2012)
  • Author(s): K.D. Jahnke, B. Naydenov, T. Teraji, S. Koizumi, T. Umeda, J. Isoya, and F. Jelezko
  • Journal Title: Appl. Phys. Lett Volume: 101 Issue: 1 Pages: 0124051-5
  • DOI: 10.1063/1.4731778
  • Peer Reviewed
• [Journal Article] Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamond (2012)
  • Author(s): Y. Kato, H. Umezawa, T. Teraji, S. Shikata
  • Journal Title: Diamond Relat. Mater Volume: 23 Pages: 109-111
  • DOI: 10.1016/j.diamond.2012.01.024
  • Peer Reviewed
• [Journal Article] Forward tunneling current in {111}-oriented homoepitaxial diamond p-n junction (2012)
  • Author(s): Yiuri Garino
  • Journal Title: Diamond & Related Materials Volume: 21 Pages: 33-36
  • DOI: 10.1016/j.diamond.2011.10.007
  • Peer Reviewed
• [Journal Article] Non-destructive detection of killer defects of diamond Schottky barrierdiode (2011)
  • Author(s): Shinya Ohmagari, Tokuyuki Teraji, Yasuo Koide
  • Journal Title: Journal of Applied Physics Volume: 110 Issue: 5 Pages: 0561051-3
  • DOI: 10.1063/1.3626791
  • Peer Reviewed
• [Journal Article] CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping (2011)
  • Author(s): Y. Kato, H. Umezawa, H. Yamaguchi, T. Teraji, and S. Shikata
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1282 Pages: 73-77
  • DOI: 10.1557/opl.2011.446
  • Peer Reviewed
• [Journal Article] Local Stress-strain Structure in CVD Diamond Observed by Raman Peak-shift Mapping (2011)
  • Author(s): Y. Kato, H. Umezawa, T. Teraji, and S. Shikata
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1282 Pages: 61-65
  • DOI: 10.1557/opl.2011.440
  • Peer Reviewed
• [Journal Article] Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers (2011)
  • Author(s): P. Muret, P.-N. Volpe, T.-N. Tran-Thi, J. Pernot, C. Hoarau, F. Omnès, and T. Teraji
  • Journal Title: Diamond Relat. Mater Volume: 20 Issue: 3 Pages: 285-289
  • DOI: 10.1016/j.diamond.2011.01.008
  • Peer Reviewed
• [Journal Article] CVD Diamond Dislocations Observed by X-ray Topography, Birefrengence Image and Cathodoluminesence mapping (2011)
  • Author(s): Y.Kato, H.Umezawa, T.Teraji, S.Shikata
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1,282 Pages: 61-65
  • Peer Reviewed
• [Journal Article] Non-destructive detection of killer defects of diamond Schottky barrier diodes (2011)
  • Author(s): Y.Kato, H.Umezawa, H.Yamaguchi, T.Teraji S.Shikata
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1,282 Pages: 73-77
  • Peer Reviewed
• [Journal Article] Extreme dielectric strength in boron doped homoepitaxial diamond (2010)
  • Author(s): P.N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholz
  • Journal Title: Appl. Phys. Lett Volume: 97 Issue: 22 Pages: 2235011-3
  • DOI: 10.1063/1.3520140
  • Peer Reviewed
• [Journal Article] High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer (2010)
  • Author(s): P.N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholz
  • Journal Title: phys. status solide Volume: 207 Issue: 9 Pages: 2088-2092
  • DOI: 10.1002/pssa.201000055
  • Peer Reviewed
• [Journal Article] Abnormal current increases induced under high electric fields in asymmetrical graphite-intrinsic-diamond-graphite structures fabricated with high-quality homoepitaxial chemical-vapor-deposited diamond layers (2010)
  • Author(s): M. Hamada, T. Teraji, and T. Ito
  • Journal Title: J. Appl. Phys Volume: 107 Issue: 6 Pages: 0637081-6
  • DOI: 10.1063/1.3327439
  • Peer Reviewed
• [Journal Article] Hall hole mobility in boron-doped homoepitaxial diamond (2010)
  • Author(s): J. Pernot, P. N. Volpe, F. Omnès, P. Muret, V. Mortet, K. Haenen, and T. Teraji
  • Journal Title: Phys. Rev. B Volume: 81 Issue: 20 Pages: 2052031-6
  • DOI: 10.1103/physrevb.81.205203
  • Peer Reviewed
• [Journal Article] Light intensity dependence of photocurrent gain in single-crystal diamond detectors (2010)
  • Author(s): M. Liao, X. Wang, T. Teraji, S. Koizumi, and Y. Koide
  • Journal Title: Phys. Rev. B Volume: 81 Issue: 3 Pages: 333041-4
  • DOI: 10.1103/physrevb.81.033304
  • Peer Reviewed
• [Journal Article] Effects of shallow traps on the reverse current of diamond Schottky diode : An electrical transient study (2010)
  • Author(s): Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito
  • Journal Title: phys. stat. sol Volume: 207 Issue: 6 Pages: 1460-1463
  • DOI: 10.1002/pssa.200925448
  • Peer Reviewed
• [Presentation] WC/p-diamond Schottky Diode Behaviour at High Temperature (2014)
  • Author(s): A. Fiori, T. Teraji, Y. Koide
  • Organizer: 第61回応用物理学関係連合講演会
  • Place of Presentation: 青山学院大学，相模原市
• [Presentation] Homoepitaxial Growth of High-Quality Diamond Films and Their Semiconducting Properties (2013)
  • Author(s): T. Teraji
  • Organizer: Workshop on Strategic Japanese-Croatian Cooperative Program 2013
  • Place of Presentation: Todaiji Culture Center, Nara
  • Year and Date: 2013-11-14
  • Invited
• [Presentation] ダイヤモンド高耐圧ダイオードの現状と課題 (2013)
  • Author(s): 寺地徳之
  • Organizer: ニューダイヤモンドフォーラム平成25年度第1回研究会
  • Place of Presentation: 東京大学,目黒
  • Year and Date: 2013-06-27
  • Invited
• [Presentation] Diamond Schottky Barrier Diodes : Current Transport Mechanisms and Thermal Stability (2013)
  • Author(s): T. Teraji
  • Organizer: 1st French-Japanese Workshop on Diamond Power Devices
  • Place of Presentation: Majestic congress center, Chamonix, France
  • Year and Date: 2013-06-20
  • Invited
• [Presentation] p-Type Diamond Schottky Interfaces - Current Transport Mechanisms and Thermal Stability (2013)
  • Author(s): T. Teraji
  • Organizer: 6th Int. Symp. on Control of Semiconductor Interfaces
  • Place of Presentation: Kyushu Univ., Fukuoka
  • Year and Date: 2013-06-05
  • Invited
• [Presentation] p-Type Diamond Schottky Interfaces - Current Transport Mechanisms and Thermal Stability (2013)
  • Author(s): T. Teraji
  • Organizer: 6th Int. Symp. on Control of Semiconductor Interfaces
  • Place of Presentation: Fukuoka
  • Invited
• [Presentation] Diamond Schottky Barrier Diodes: Current Transport Mechanisms and Thermal Stability (2013)
  • Author(s): T. Teraji
  • Organizer: 1st French-Japanese workshop on diamond power devices
  • Place of Presentation: Chamonix, France
  • Invited
• [Presentation] ダイヤモンド高耐圧ダイオードの現状と課題 (2013)
  • Author(s): 寺地徳之
  • Organizer: ニューダイヤモンドフォーラム平成25年度第1回研究会
  • Place of Presentation: 東京大学，目黒
  • Invited
• [Presentation] Inhomogeneous Schottky barrier height at metal/diamond interfaces (2013)
  • Author(s): T. Teraji, A. Fiori, Y. Koide
  • Organizer: International Conference on Diamond, and Carbon Materials 2013
  • Place of Presentation: Riva del Garda, Itary
• [Presentation] Models and parameters study for diamond electronic devices simulations (2013)
  • Author(s): A. Marechal, N. Rouger, J.-C. Crebier, J. Pernot, S. Koizumi, T. Teraji and E. Gheeraert
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisya Univ., Kyoto
• [Presentation] Reverse current transport at diamond Schottky barrier interfaces (2013)
  • Author(s): T. Teraji, A. Fiori, Y. Koide,
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: Doshisya Univ., Kyoto
• [Presentation] “Homogeneity of WC p-type diamond Schottky interfaces” (2013)
  • Author(s): A. Fiori, T. Teraji, Y. Koide
  • Organizer: 第74回応用物理学関係連合講演会
  • Place of Presentation: 同志社大学，京都市
• [Presentation] 炭化タングステン／p型ダイヤモンドショットキー界面の熱的安定性 (2013)
  • Author(s): A. Fiori, T. Teraji, Y. Koide
  • Organizer: 第27回ダイヤモンドシンポジウム
  • Place of Presentation: 日本工業大学，南埼玉郡
• [Presentation] Effective use of methane for isotopic enriched diamond growth (2013)
  • Author(s): T.Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya
  • Organizer: SBDD XVIII
  • Place of Presentation: Hasselt, Belgium
• [Presentation] Synchronized B and 13C diamond delta structures - An ultimate thickness characterization tool (2013)
  • Author(s): A. Fiori, F. Jomard, T. Teraji, S. Koizumi, J. Isoya, E. Gheeraert, and E. Bustarret
  • Organizer: SBDD XVIII
  • Place of Presentation: Hasselt, Belgium
• [Presentation] Isotopically-enriched 12C diamond films grown by chemical vapor deposition (2013)
  • Author(s): T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, Y. Koide, T. Yamamoto, S. Onoda, T. Ohshima, B. Naydenov, F. Jelezko, and J. Isoya
  • Organizer: SBDD XVIII
  • Place of Presentation: Hasselt, Belgium
• [Presentation] Parameter adjustment for diamond electronic devices simulation (2013)
  • Author(s): A. Marechal, N. Rouger, J.-C. Crebier, J. Pernot, S. Koizumi, T. Teraji, and E. Gheeraert
  • Organizer: SBDD XVIII
  • Place of Presentation: Hasselt, Belgium
• [Presentation] p-type diamond Schottky diodes -current transport mechanisms and defects (2012)
  • Author(s): T. Teraji and Y. Koide
  • Organizer: IUMRS-ICEM2012
  • Place of Presentation: PACIFICO YOKOHAMA, Kanagawa, Japan
  • Year and Date: 2012-09-25
  • Invited
• [Presentation] ヘテロエピタキシャルダイヤモンドの横方向成長過程における応力変化(「講演奨励賞受賞記念講演」) (2012)
  • Author(s): 鷲山瞬, 吉川太朗, 児玉英之, 寺地徳之, 鈴木一博, 古滝敏郎, 河野省三, 澤邊厚仁
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学,新宿
  • Year and Date: 2012-03-18
  • Invited
• [Presentation] ヘテロエピタキシャルダイヤモンドの横方向成長過程における応力変化 (2012)
  • Author(s): 鷲山瞬, 吉川太朗, 児王英之, 寺地徳之, 鈴木一博, 古滝敏郎, 河野省三, 澤邊厚仁
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学,新宿
  • Year and Date: 2012-03-18
• [Presentation] Isotopically-enriched 12C diamond films (2012)
  • Author(s): T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, Y. Koide, Y. Yamamoto, S. Onoda, T. Ohshima, B. Naydenov, F. Jelezko, J. Isoya
  • Organizer: IUMRS-ICEM2012
  • Place of Presentation: Yokohama, Japan
• [Presentation] p-type diamond Schottky diodes -current transport mechanisms and defects (2012)
  • Author(s): T. Teraji and Y. Koide
  • Organizer: IUMRS-ICEM2012
  • Place of Presentation: Yokohama, Japan
  • Invited
• [Presentation] Thermally-stable tungsten carbide/p-diamond Schottky diodes (2012)
  • Author(s): T. Teraji, M.Y. Liao, Y. Koide
  • Organizer: International Conference on Diamond, and Carbon Materials 2012
  • Place of Presentation: Granada, Spain
• [Presentation] Isotopically-enriched 12C diamond films grown by chemical vapor deposition (2012)
  • Author(s): T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, Y. Koide, Y. Yamamoto, S. Onoda, T. Ohshima, B. Naydenov, F. Jelezko, J. Isoya
  • Organizer: International Conference on Diamond, and Carbon Materials 2012
  • Place of Presentation: Granada, Spain
• [Presentation] Fabrication of the Ordered Array of Optical Centers in Diamond by Low Energy Ion Implantation (2012)
  • Author(s): A. Komatsubara, T. Teraji, M. Hori, K. Kumagai, S. Tamura,,T. Ohshima, S. Onoda, T. Yamamoto, C. Muller, B. Naydenov, L. McGuinness, F. Jelezko, T. Tanii, T. Shinada, J. Isoya
  • Organizer: International Microprocesses and nanotechnology Conference 2012
  • Place of Presentation: Kobe, Japan
• [Presentation] 金属/ダイヤモンド界面の不完全性とショットキーダイオード特性 (2011)
  • Author(s): 寺地徳之, FIORI Alexandre, 大曲新矢, 小出康夫
  • Organizer: 第25回ダイヤモンドシンポジウム
  • Place of Presentation: 産業技術総合研究所,つくば
  • Year and Date: 2011-12-07
• [Presentation] 種々ダイヤモンド膜厚を持つダイヤモンド紫外線センサーの光応答特性 (2011)
  • Author(s): 廖梅勇, M.Allouche, 寺地徳之, 井村将隆, 小出康夫
  • Organizer: 第25回ダイヤモンドシンポジウム
  • Place of Presentation: 産業技術総合研究所,つくば
  • Year and Date: 2011-12-07
• [Presentation] 選択成長によるヘテロエピタキシャルダイヤモンド放射線検出器の特性向上 (2011)
  • Author(s): 永井克将, 児玉英之, 寺地徳之, 鈴木一博, 河野省三, 澤邊厚仁
  • Organizer: 第25回ダイヤモンドシンポジウム
  • Place of Presentation: 産業技術総合研究所,つくば
  • Year and Date: 2011-12-07
• [Presentation] Imperfections for diamond Schottky diodes (2011)
  • Author(s): T.Teraji, A.Fiori, N.Kiritani, S.Tanimoto, S.Ohmagari, Y.Koide
  • Organizer: 22th European Conference on Diamond, Diamond-Like Materials Carbon Nanotubes and Nitrides
  • Place of Presentation: Garmisch-Partenkirchen, Germany
  • Year and Date: 2011-09-07
• [Presentation] 炭化タングステン/p型ダイヤモンドショットキーダイオードの漏れ電流特性 (2011)
  • Author(s): 寺地徳之, 小出康夫
  • Organizer: 第72回応用物理学関係連合講演会
  • Place of Presentation: 山形大学,山形
  • Year and Date: 2011-08-30
• [Book] 物質・材料研究機構監修 (2011)
  • Author(s): 寺地徳之
  • Total Pages: 859
  • Publisher: オーム社
• [Patent(Industrial Property Rights)] ダイヤモンド半導体デバイス (2013)
  • Inventor(s): 寺地 徳之, 小泉 聡, 小出 康夫
  • Industrial Property Rights Holder: 独立行政法人物質・材料研究機構
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-09-13
  • Overseas
• [Patent(Industrial Property Rights)] ダイヤモンド結晶成長方法及びダイヤモンド結晶成長装置 (2011)
  • Inventor(s): 寺地 徳之
  • Industrial Property Rights Holder: 独立行政法人物質・材料研究機構
  • Industrial Property Rights Type: 特許
  • Filing Date: 2011-06-16