| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2013: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2012: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2011: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
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| Research Abstract |
Poly-Si thin films with large crystal grains were formed by continuous-wave laser lateral crystallization with Gaussian laser spot. Strain effects on electron mobility were investigated with tri-gate poly-Si TFTs. Highly bi-axially oriented poly-Si thin films with very long grains were successfully formed by double-line beam continuous wave laser crystallization. High performance TFTs with this well-crystal oriented poly-Si thin films were also fabricated.
As one example of principal elemental circuit of "Green LSI" with advanced TFT technology, a photovoltaic (PV)-assisted high-frequency rectifier has been fabricated with bulk CMOS technology and its performance has been evaluated. It has been found that the TFT technology, which uses a transparent dielectric substrate, has superiority in hybrid integration of PV technology.
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