The study on human monitoring chip and multi-physics simulation technology
Project/Area Number |
23360149
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
MACHIDA KATSUYUKI 東京工業大学, 総合理工学研究科(研究院), 連携教授 (90597676)
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Co-Investigator(Renkei-kenkyūsha) |
TOSHIYOSHI Hiroshi 東京大学, 先端科学技術センター, 教授 (50282603)
MASU Kazuya 東京工業大学, ソリューション研究機構, 教授 (20157192)
ISHIHARA Noboru 東京工業大学, ソリューション研究機構, 特任教授 (20396641)
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Project Period (FY) |
2011-04-01 – 2014-03-31
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Project Status |
Completed (Fiscal Year 2013)
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Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2013: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2011: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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Keywords | 統合設計 / CMOS / MEMS / 加速度センサ / センサ回路 / CMOS-MEMS / 異種機能集積 / 人体検知 / 異種機能集積化 |
Research Abstract |
The research was performed to investigate multi-physics simulation, MEMS design, and CMOS sensor circuit technology for a new human monitoring CMOS-MEMS device. The results are as follows; i) the multi-physics simulation platform for the technology was developed to understand simultaneously both the mechanical and electrical behaviors of MEMS stacked on LSI for the first time. ii)the proposed MEMS structure by the post-CMOS process on CMOS circuit and the proposed arrayed CMOS-MEMS accelerometer with a wide detection range were developed. iii)we confirmed the realization of the sub-1G MEMS accelerometer. iv) the versatile capacitive CMOS-MEMS sensor circuit to a MEMS sensor was proposed. Using our simulation platform and fabrication trials, we cofirmed the validity of the technical concept. v) the proposed equivelent circuit model for vibration device was confirmed by simulation. As a result, it is confirmed that the basic technology for the integrated CMOS-MEMS device was established.
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Report
(4 results)
Research Products
(108 results)
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[Journal Article] Novel Sensor Structure and its Evaluation for Integrated Complementary Metal Oxide Semiconductor Microelectromechanical Systems Accelerometer2013
Author(s)
Toshifumi Konishi, Daisuke Yamane, Takaaki Matsushima, Gou Motohashi, Ken Kagaya, Hiroyuki Ito, Noboru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, and Kazuya Masu
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Journal Title
Japanese Journal of Applied Physics(special issue on MNC 2012)
Volume: vol. 52, no. 6
Issue: 6S
Pages: 06GL04-06GL04
DOI
NAID
Related Report
Peer Reviewed
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[Presentation] アレイ型MEMS 加速度センサの基本特性評価2013
Author(s)
山根 大輔, 小西 敏文, 松島 隆明, 加賀谷賢, 佃 真文, 伊藤 浩之, 石原 昇, 年吉 洋, 町田 克之, 益 一哉
Organizer
第74回応用物理学会秋季学術講演会
Place of Presentation
同志社大学
Year and Date
2013-09-18
Related Report
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[Presentation] エネルギーハーベストデバイスの検討(1)2013
Author(s)
加賀谷 賢, 小西 敏文, 山根 大輔, 松島 隆明, 佃 真文, 伊藤 浩之, 石原 昇, 年吉 洋, 町田 克之, 益 一哉
Organizer
第74回応用物理学会秋季学術講演会
Place of Presentation
同志社大学
Year and Date
2013-09-18
Related Report
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[Presentation] アレイ型MEMS 加速度センサの基礎検討2013
Author(s)
佃 真文, 山根 大輔, 小西 敏文, 松島 隆明, 加賀谷 賢, 伊藤 浩之, 石原 昇, 年吉 洋, 町田克之, 益 一哉
Organizer
平成25年度電気学会総合研究会
Place of Presentation
東京工科大学
Year and Date
2013-08-08
Related Report
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[Presentation] アレイ型MEMS 加速度センサの設計2013
Author(s)
小西敏文, 山根大輔, 本橋剛, 加賀谷賢, 松島隆明, 伊藤浩之, 石原昇, 年吉洋, 町田克之, 益一哉
Organizer
第60回応用物理学会春季学術講演会・合同セッションL
Place of Presentation
神奈川工科大学
Year and Date
2013-03-29
Related Report
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[Presentation] アレイ型MEMS 加速度センサの検討2013
Author(s)
山根大輔, 小西敏文, 松島隆明, 本橋剛, 加賀谷賢, 伊藤浩之, 石原昇, 年吉洋, 町田克之, 益一哉
Organizer
第60回応用物理学会春季学術講演会・合同セッションL
Place of Presentation
神奈川工科大学
Year and Date
2013-03-29
Related Report
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[Presentation] 集積化CMOS-MEMS 技術の検討2013
Author(s)
町田克之, 小西敏文, 山根大輔, 年吉洋, 益一哉
Organizer
平成25年度電気学会全国大会・シンポジウムS24 ワイヤレス通信応用RF-MEMS 技術
Place of Presentation
名古屋大学
Year and Date
2013-03-22
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[Presentation] Sub-1G MEMS Accelerometer2013
Author(s)
Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Gou Motohashi, Ken Kagaya, Hiroyuki Ito, Noboru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, and Kazuya Masu
Organizer
Proc. IEEE SENSORS 2013
Place of Presentation
USA
Related Report
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[Presentation] Novel Sensor Circuits Design Using Multi-physics Simulation for CMOS-MEMS Technology2013
Author(s)
Toshifumi Konishi, Daisuke Yamane, Takaaki Matsushima, Satoshi Maruyama, Ken Kagaya, Hiroyuki Ito, Noboru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, and Kazuya Masu
Organizer
2013 Int. Conf. on Solid State Devices and Materials (SSDM 2013)
Place of Presentation
Fukuoka, Japan
Related Report
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[Presentation] AN ARRAYED MEMS ACCELEROMETER WITH A WIDE RANGE OF DETECTION2013
Author(s)
Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Gou Motohashi, Ken Kagaya, Hiroyuki Ito, Noboru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, and Kazuya Masu
Organizer
Proc. 17th Int. Conf on Solid-State Sensors, Actuators and Microsystems (Transducers 2013)
Place of Presentation
Barcelona, Spain
Related Report
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[Presentation] A Novel Sensor Structure and its Fabrication Process for Integrated CMOS-MEMS Accelerometer2012
Author(s)
Daisuke Yamane, Takaaki Matsushima, Toshifumi Konishi, Gou Motohashi, Hiroyuki Ito, Noboru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, and Kazuya Masu
Organizer
2012 Int. Conf. on Solid State Devices and Materials (SSDM 2012)
Place of Presentation
Kyoto Int. Conf. Center, Kyoto, Japan
Related Report
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[Presentation] A CMOS-MEMS Design Technique based on an Electrical Circuit Simulator with Hardware Description Language2012
Author(s)
Toshifumi Konishi, Satoshi Maruyama, Makoto Mita, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Noboru Ishihara, Kazuya Masu, Hiroyuki Fujita, and Hiroshi Toshiyoshi
Organizer
2012 Int. Conf. on Solid State Devices and Materials (SSDM 2012)
Place of Presentation
Kyoto Int. Conf. Center, Kyoto, Japan
Related Report
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[Presentation] ハードウェハ記述言語を用いた集積化CMOS-MEMS 統合設計技術2012
Author(s)
小西敏文, 丸山智史, 三田信, 山根大輔, 伊藤浩之, 町田克之, 石原昇, 益一哉, 藤田博之, 年吉洋
Organizer
応用物理学会第4回集積化MEMS シンポジウム, IM1-4
Place of Presentation
北九州国際会議場
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