| Budget Amount *help |
¥20,150,000 (Direct Cost: ¥15,500,000、Indirect Cost: ¥4,650,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2011: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
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| Research Abstract |
In this study, the condensation control of polymer aggregate in resist micro pattern is carried out in order to clarify the LER(line edge roughness) mechanism by using an atomic force microscope (AFM). The condensation of polymer aggregate affects strongly to the decrease of LER in resist pattern side-wall. From the DPAT (direct peeling by using AFM tip) results of resist pattern adhesion, the polymer aggregate condensation at the pattern bottom is one important control factor. The intrusion experiments indicate similar tendency of resist-substrate interface stability. In this regard, Zeta-potential of polymer aggregate surface should affect to LER control of resist pattern during pattern development. In conclusion, in this study, the important design rules in LER decrease of resist pattern of 15nm size are indicated.
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