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Development of solar cells with high stability at elevated temperatures

Research Project

Project/Area Number 23360163
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

HORIKOSHI Yoshiji  早稲田大学, 理工学術院, 教授 (60287985)

Co-Investigator(Renkei-kenkyūsha) KAWAHARAZUKA Atsushi  早稲田大学, 理工学術院, 准教授 (40329082)
FUJITA Miki  早稲田大学, 理工学術院, 次席研究員 (60386729)
NISHINAGA Jiro  早稲田大学, 理工学術院, 准教授 (90454058)
Project Period (FY) 2011-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2011: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
Keywords太陽電池 / 温度安定性 / 励起子吸収効果 / 分子線エピタキシー / 超格子太陽電池 / AlGaAs/GaAs超格子 / Si/SiO2超格子 / スパッタリング / 超格子 / タンデム太陽電池 / 励起子吸収 / AlGaAs/GaAs / 解放電圧 / Si/SiO2 / 半導体 / 薄膜・量子構造 / 作成・評価技術 / 表面 / 界面 / エピタキシャル成長 / 結晶評価 / ヘテロ構造
Outline of Final Research Achievements

One of the most serious problems of solar cells is the degradation of solar cell efficiency(η) at elevated temperatures. This effect is probably caused by the bandgap(Eg) shrinkage at elevated temperatures. The shrinkage of Eg decreases Voc, and as a result, lowers η.In semiconductor superlattices(SLs), effective Eg includes an increment by quantum confinement effect which is rather temperature insensitive. Therefore, temperature stable solar cells could be achieved by using SL absorption layers.
We have fabricated AlGaAs/GaAs SL solar cells by using an optimized SL structure grown by MBE. Both Voc andη are found to be more temperature-stable compared with GaAs bulk solar cells with an equivalent solar cell structure. Even at 100℃, dη/dT is as low as 0.22%/deg which is the lowest ever reported. In addition, in SL solar cells, the excitonic absorption is found to be operative even at elevated temperatures which lead to the higher efficiency compared to bulk solar cells.

Report

(5 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • Research Products

    (51 results)

All 2015 2014 2013 2012 2011 Other

All Journal Article (18 results) (of which Peer Reviewed: 18 results,  Open Access: 6 results,  Acknowledgement Compliant: 6 results) Presentation (27 results) (of which Invited: 2 results) Book (3 results) Patent(Industrial Property Rights) (3 results) (of which Overseas: 1 results)

  • [Journal Article] Optical properties of AlxGa1-xAs/GaAs superlattice solar cells2015

    • Author(s)
      40.Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto and Yoshiji Horikoshi
    • Journal Title

      Journal of Crystal Growth

      Volume: in print Pages: 22770-22770

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Effects of surface barrier layer in AlGaAs/GaAs solar cells2015

    • Author(s)
      39.Hiroyuki Urabe, Makoto Kuramoto, Tomohiro Nakano, Atsushi Kawaharazuka, Toshiki Makimoto, Yoshiji Horikoshi
    • Journal Title

      Journal of Crystal Growth

      Volume: in print Pages: 22742-22742

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] High absorption efficiency of AlGaAs/GaAs superlattice solar cells2015

    • Author(s)
      Jiro Nishinaga, Atsushi Kawaharazuka and Yoshiji. Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54

    • NAID

      210000145127

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy2015

    • Author(s)
      .Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto and Yoshiji Horikoshi
    • Journal Title

      Journal of Crystal Growth

      Volume: in print Pages: 203-206

    • DOI

      10.1016/j.jcrysgro.2015.02.059

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy2015

    • Author(s)
      athiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi,
    • Journal Title

      AIP Advances

      Volume: 5 Pages: 027120-1

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Optical Properties of Amorphous and Nanostructure Si/SiO2 Quantum Wells2014

    • Author(s)
      30.T. Takeuchi, M. Kondo, M. Fujuta, A. Kawaharazuka, and Y. Horikoshi
    • Journal Title

      J. Nano. Res.

      Volume: 26 Pages: 59-62

    • DOI

      10.4028/www.scientific.net/jnanor.26.59

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Crystalline and electrical characteristics of C60 uniformly doped GaAs layers2013

    • Author(s)
      J. Nishinaga and Y. Horikoshi
    • Journal Title

      J. Cryst. Growth

      Volume: 378 Pages: 81-84

    • DOI

      10.1016/j.jcrysgro.2012.12.044

    • Related Report
      2013 Annual Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of CuGaSe2 layers grown on GaAs substrates2013

    • Author(s)
      M.Fujita, A. Kawaharazuka, and Y. Horikoshi
    • Journal Title

      J. Cryst. Growth

      Volume: 378 Pages: 154-157

    • DOI

      10.1016/j.jcrysgro.2012.12.171

    • Related Report
      2013 Annual Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Selective area growth of InAs nanostructures on faceted GaAs microstructure by migration enhanced epitaxy2013

    • Author(s)
      M. Zander, J. Nishinaga, and Y. Horikoshi
    • Journal Title

      J. Cryst. Growth

      Volume: 378 Pages: 480-484

    • DOI

      10.1016/j.jcrysgro.2012.12.089

    • Related Report
      2013 Annual Research Report 2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Absorption Efficiency Superlattice Solar Cells by Excitons2013

    • Author(s)
      J. Nishinaga, A. Kawaharazuka, K. Onomitsu, and Y. Horikoshi
    • Journal Title

      J. Appl. Phys. 52

      Volume: 52 Issue: 11R Pages: 112302-112302

    • DOI

      10.7567/jjap.52.112302

    • NAID

      40019883484

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Controlled nucleation and optical properties of InAs quantum dots grown on faceted GaAs microstructures2013

    • Author(s)
      M. Zander, J. Nishinaga, H. Gotoh, and Y. Horikoshi
    • Journal Title

      Phys. Status Solidi

      Volume: C 10, Issue: 11 Pages: 1500-1504

    • DOI

      10.1002/pssc.201300274

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe22013

    • Author(s)
      S. Thiru, M. Fujita, A. Kawaharazuka, and Y. Horikoshi
    • Journal Title

      Appl. Phys. A

      Volume: 113 Issue: 2 Pages: 257-261

    • DOI

      10.1007/s00339-013-7951-5

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Successful growth of Cu2Se-free CuGa2Se2 by Migration-Enhanced Epitaxy2012

    • Author(s)
      M.Fujita, T.Sato, T.Kitada, A.Kawaharazuka, Y.Horikoshi
    • Journal Title

      J.Vac.Sci.Technol.B

      Volume: 30 Issue: 2

    • DOI

      10.1116/1.3690456

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of excitons in AlGaAs/GaAs superlattice solar cells2011

    • Author(s)
      J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50 Issue: 5R Pages: 052302-052302

    • DOI

      10.1143/jjap.50.052302

    • NAID

      40018812632

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs2011

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Journal Title

      J.Cryst.Growth

      Volume: 323 Issue: 1 Pages: 135-139

    • DOI

      10.1016/j.jcrysgro.2010.11.068

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy2011

    • Author(s)
      A.Kawaharazuka, K.Onomitsu, J.Nishinaga, Y.Horikoshi
    • Journal Title

      J.Cryst.Growth

      Volume: 323 Issue: 1 Pages: 504-507

    • DOI

      10.1016/j.jcrysgro.2010.12.051

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2011

    • Author(s)
      J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
    • Journal Title

      Physica Status solidi

      Volume: C9(2) Pages: 330-333

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy2011

    • Author(s)
      M.FUJITA, A.KAWAHARAZUKA, J.NISHINAGA, K.H.PLOOG, Y.HORIKOSHI
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50 Issue: 12R Pages: 125502-125502

    • DOI

      10.1143/jjap.50.125502

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Presentation] GaAs(111)B面上のGaの挙動2014

    • Author(s)
      河原塚篤,堀越佳治
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] MEE法を用いたGaAs (001)基板上へのCIS-CGS低温成長2014

    • Author(s)
      谷口龍希、サティアバマ ティル、堀越佳治、牧本俊樹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] AlxGa1-xAs/GaAs超格子太陽電池における障壁層厚さの効果2014

    • Author(s)
      20.倉本真,浦部宏之,中野朋洋,河原塚篤,西永慈郎,牧本俊樹,堀越佳治
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] AlGaAs/GaAs太陽電池における表面再結合制御2014

    • Author(s)
      19.浦部宏之,倉本真,中野朋洋,河原塚篤,牧本俊樹,堀越佳治
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Optical and Electrical properties of CuInSe2/(CuGaSe2:Ge) Superlattice grown on GaAs(001)2014

    • Author(s)
      S. Thiru, A. Kawaharazuka, and Y. Horikoshi
    • Organizer
      The 41st International Symposium on Compound Semiconductors
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2014-05-11 – 2014-05-15
    • Related Report
      2014 Annual Research Report
  • [Presentation] Electrical properties of fullerene doped GaAs pin diodes grown by MBE2013

    • Author(s)
      . J. Nishinaga
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Cancun, Mexico
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Effect of excitonic absorption on the efficiency of AlGaAs/GaAs solar cells2013

    • Author(s)
      . Y. Horikoshi
    • Organizer
      JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013

    • Author(s)
      J. Nishinaga
    • Organizer
      40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe, JapanMay
    • Related Report
      2013 Annual Research Report
  • [Presentation] Si/SiOx Superlattice Growth by Molecular Beam Epitaxy2013

    • Author(s)
      M. Fujita
    • Organizer
      30th North American Molecular Beam Epitaxy Conference
    • Place of Presentation
      Banff, Canada
    • Related Report
      2013 Annual Research Report
  • [Presentation] Crystalline and electrical characteristics of C60 doped GaAs layers2013

    • Author(s)
      J. Nishinaga
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      滋賀
    • Related Report
      2013 Annual Research Report
  • [Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013

    • Author(s)
      J. Nishinaga
    • Organizer
      30th North American Molecular Beam Epitaxy Conference
    • Place of Presentation
      Banff, Canada
    • Related Report
      2013 Annual Research Report
  • [Presentation] Photoluminescence of single crystal thin film chalcopyrite CuGaSe2 grown on GaAs(001)2013

    • Author(s)
      S. Thiru
    • Organizer
      40th International Symposium on Compound Semiconductors,
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] GaAs基板上にMEE成長したCuGaSe2の電気的特性(17pC1-8)2012

    • Author(s)
      藤田実樹, 佐藤友博, 北田剛, 堀越佳治
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] CuInSe2/CuGaSe2超格子の吸収効率(17pC1-3)2012

    • Author(s)
      河原塚篤, 藤田実樹, 堀越佳治
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] Excitonic Effect on the Semiconductor Solar-Cells with AlGaAs/GaAs Superlattices2011

    • Author(s)
      A.Kawaharazuka, J.Nishinaga, Y.Horikoshil
    • Organizer
      21st International Photovoltaic Science and Engineering Conference (PVSEC-21)
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2011-12-02
    • Related Report
      2011 Annual Research Report
  • [Presentation] AlGaAs/GaAs超格子太陽電池の吸収効率の評価(31pH-12)2011

    • Author(s)
      河原塚篤、西永慈郎、堀越佳治
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] 励起子吸収を利用したAlGaAs/GaAs超格子太陽電池(31pH-11)2011

    • Author(s)
      西永慈郎、河原塚篤、小野満恒二、クラウスプローク、堀越佳治
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] MEE法によるGaAs基板上CuGaSe2薄膜の界面特性(30aH-7)2011

    • Author(s)
      佐藤友博、藤田実樹、北田剛、堀越佳治
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Electrical properties of C60 and Si codoped GaAs layers2011

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Organizer
      28th North American Molecular Beam Epitaxy
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2011-08-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Successful growth of Cu2Se-free CuGaSe2 by Migration-Enhanced Epitaxy2011

    • Author(s)
      M.Fujita, T.Sato, T.Kitada, Y.Horikoshi
    • Organizer
      28th North American Molecular Beam Epitaxy
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2011-08-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2011

    • Author(s)
      J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
    • Organizer
      38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] Structural properties of InAs-basad nanostructures on GaAs(001) and GaAs(111) A grown by area selective epitaxy2011

    • Author(s)
      M.Zander, J.Nishinaga, K.Iga, Y.Horikoshi
    • Organizer
      38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaAs(001)上に成長したCuGaSe2単結晶薄膜のフォトルミネセンス

    • Author(s)
      Sathiabama Thiru
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] X電子伝導を用いたAlGaInSb混晶太陽電池

    • Author(s)
      河原塚篤X電子伝導を用いたAlGaInSb混晶太陽電池
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] フラーレン添加GaAs pinダイオードの電気的特性

    • Author(s)
      西永慈郎
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] Magnetron sputtering 法で製作したSi/SiO2薄膜の基礎特性

    • Author(s)
      竹内登志男
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] MBE法により成長したSiOx膜の電気的特性

    • Author(s)
      藤田実樹
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Book] 超格子構造太陽電池の開発2012

    • Author(s)
      河原塚篤
    • Total Pages
      20
    • Publisher
      株式会社NTS
    • Related Report
      2012 Annual Research Report
  • [Book] Molecular beam epitaxy2012

    • Author(s)
      Yoshiji Horikoshi
    • Total Pages
      7
    • Publisher
      Migration enhanced epitaxy for low dimensional structures
    • Related Report
      2012 Annual Research Report
  • [Book] Molecular beam epitaxy2012

    • Author(s)
      Jiro Nishinaga
    • Total Pages
      19
    • Publisher
      Growth and characterization of fullerene/GaAs interfaces and C60 doped GaAs and AlGaAs layers
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 太陽電池2013

    • Inventor(s)
      堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
    • Industrial Property Rights Holder
      堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-03-18
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] CIS-CGS 太陽電池2013

    • Inventor(s)
      堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
    • Industrial Property Rights Holder
      堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-03-25
    • Related Report
      2012 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 太陽電池2012

    • Inventor(s)
      堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
    • Industrial Property Rights Holder
      堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
    • Industrial Property Rights Type
      特許
    • Filing Date
      2012-07-27
    • Related Report
      2012 Annual Research Report

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Published: 2011-04-06   Modified: 2019-07-29  

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