| Project/Area Number |
23360164
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Toyota Technological Institute |
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Principal Investigator |
SAKAKI Hiroyuki 豊田工業大学, 工学(系)研究科(研究院), 教授 (90013226)
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| Co-Investigator(Kenkyū-buntansha) |
OHMORI Masato 豊田工業大学, 大学院・工学研究科, 嘱託研究員 (70454444)
VITUSHINSKIY Pavel 豊田工業大学, 大学院・工学研究科, 研究補助者 (30545330)
AKIYAMA Yoshihiro 豊田工業大学, 大学院・工学研究科, 研究補助者 (60469773)
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| Co-Investigator(Renkei-kenkyūsha) |
NODA Takeshi 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門 太陽光発電材料ユニット 超高効率太陽電池グループ, グループリーダー (90251462)
KAWAZU Takuya 独立行政法人物質・材料研究機構, 先端的共通技術部門 先端フォトニクス材料ユニット 量子ナノ構造グループ, 主任研究員 (00444076)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2013: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2012: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2011: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
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| Keywords | 光検出器 / 三角障壁 / 量子ドット / 量子ロッド / 分子線エピタキシー / 単一光子検出 / 光検出 / GaAs / GaSb / 光通信波長 |
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| Research Abstract |
In triangular barrier (TB) diodes, formed by placing acceptors in the middle part of an undoped GaAs layer between a pair of n-type electrodes, electrons are normally blocked by the barrier. Electrons can flow, however, if a sufficiently high voltage is applied to offset the barrier effect. Such diodes work also as photo-detectors, as photo-generated holes get accumulated in the vicinity of acceptors and lower the barrier.
In this work, we have formed by molecular beam epitaxy novel TB diodes, in which type-II GaSb quantum dots are embedded near the acceptor layer. We have shown that their detector performances are greatly improved because photo-generated holes are mostly trapped by GaSb dots and locally reduce the barrier height. We made also TB diodes in which InGaAs quantum rods are embedded across GaAs TB diodes to show that photo-responses are further enhanced, as the electron flow is allowed only through the rods and greatly affected by photo-holes trapped in the rods.
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