シリコン上縦型発光素子を目指した導電性バッファ層上窒化物薄膜の高品質化

Research Project

Project/Area Number	23360320
Research Category	Grant-in-Aid for Scientific Research (B)
Allocation Type	Single-year Grants
Section	一般
Research Field	Material processing/treatments
Research Institution	Japan Advanced Institute of Science and Technology
Principal Investigator	高村由起子 (山田由起子) Japan Advanced Institute of Science and Technology, マテリアルサイエンス研究科, 講師 (90344720)
Project Period (FY)	2011
Project Status	Completed (Fiscal Year 2011)
Budget Amount *help	¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000) Fiscal Year 2011: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)