| Budget Amount *help |
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2013: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2012: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2011: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Research Abstract |
We focused on mechanisms of process-induced defect generation and the recovery dynamics, which lead to power-consumption increase in a future electronic system. By employing a novel photoreflectance spectroscopy capable for micro-scale analysis and a capacitance-voltage technique, we clarified the plasma process-induced defect generation in crystalline Si and the recovery processes. Combined with classical molecular dynamics simulations and quantum mechanical calculations, we addressed critical process-related issues in designing present-day three-dimensional devices. Thermal annealing of the created defects was also studied for various plasma conditions such as gas chemistry. We proposed a framework of power-consumption-aware process design with respect to "defects and the behavior in a material" for future ultimately low power electronic systems.
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