Development of novel plasma-enhanced processes for low-temperature formation of high quality oxide semiconductor films
| Project/Area Number |
23360325
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
TAKENAKA Kosuke 大阪大学, 接合科学研究所, 助教 (60432423)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2013: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2012: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2011: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
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| Keywords | プラズマ加工 / 低損傷プロセス / 反応性製膜 / 半導体薄膜 / 低温形成 / 酸化物半導体 |
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| Research Abstract |
This research project has been carried out for development of novel plasma-enhanced processes to form high quality oxide semiconductor films at low substrate temperature using inductively coupled high-density low-damage plasma sources sustained with low-inductance antenna. The results of the present project have exhibited that good quality semiconductor films can be successfully formed at substrate temperatures as low as or lower than those acceptable for processing of a variety of polymers.
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Report
(4 results)
Research Products
(48 results)
