Fundamental study on uniform mixed semiconductor crystal by external force application and control of solid-liquid intercial instability
Project/Area Number |
23360343
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Properties in chemical engineering process/Transfer operation/Unit operation
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Research Institution | Osaka University |
Principal Investigator |
OKANO Yasunori 大阪大学, 基礎工学研究科, 教授 (90204007)
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Co-Investigator(Kenkyū-buntansha) |
TAKAGI Youhei 大阪大学, 基礎工学研究科, 助教 (40435772)
HAYAKAWA Yasuhiro (MINAKUCHI Hisashi) 静岡大学, 電子工学研究所, 教授 (00115453)
水口 尚 琉球大学, 工学部, 助教 (70432200)
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Project Period (FY) |
2011-04-01 – 2014-03-31
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Project Status |
Completed (Fiscal Year 2013)
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Budget Amount *help |
¥11,050,000 (Direct Cost: ¥8,500,000、Indirect Cost: ¥2,550,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2011: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
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Keywords | 結晶成長 / 数値解析 / 物質移動 / 界面 / 半導体 / 外力印加 |
Research Abstract |
Solid-liquid interfacial instability during growth of mixed crystal suchi as IngaSb and Si/Ge was experimentally and numerically investigated. Effect of gravity and intefacial kinetics on the interfacial instability during growth by the temperature gradient methid was clarified, and numerical simulation code, which can take into acount of such effects, was developed. In the crystal growth of Si/Ge by the floating zone method, Marangoni convection in the melt was clarified, and effect of crystal rotation and horizontal/vertical magnetic field application effect on the suppression of Marangoni convection was clarified by using numerical simulation.
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Report
(4 results)
Research Products
(42 results)
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[Journal Article] Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities2014
Author(s)
M. Omprakash, M. Arivanandhan, R. Arun Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, S. Moorthy Babu, Y. Inatomi and Y. Hayakawa
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Journal Title
J. Alloy and Compounds
Volume: 590
Pages: 96-101
DOI
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Peer Reviewed
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[Journal Article] Effects of Solutal Convection on the Dissolution of GaSb into InSb Melt and Solute Transport Mechanism in InGaSb Solution: Numerical Simulations and In-situ Oobservation Experiments2011
Author(s)
G. Rajesh, M. Arivanandhan, N. Suzuki, A. Tanaka, H. Morii, T. Aoki, T. Koyama, Y. Momose, T. Ozawa, Y. Inatomi, Y. Takagi, Y. Okano and Y. Hayakawa
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Journal Title
Journal of Crystal Growth
Volume: 324
Issue: 1
Pages: 157-162
DOI
Related Report
Peer Reviewed
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[Presentation] Effect of solute transport on dissolution of Si into Ge melt and growth of SiGe2013
Author(s)
M.Omprakash, M.Arivanandhan, R. Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
第60回応用物理学関係連合講演会
Place of Presentation
(神奈川工科大学)(神奈川県厚木市)
Year and Date
2013-03-29
Related Report
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[Presentation] X線透過法によるGe融液中へのSi溶解過程のその場観察2012
Author(s)
Omprakash Muthusamy, Arivanandhan Mukannan, 森井久史, 青木徹, 小山忠信, 百瀬与志美, 田中昭, 池田浩也, 立岡浩一, 岡野泰則, 小澤哲夫, 稲富裕光, Sridharan Moorthy Babu, 早川泰弘
Organizer
第59回応用物理学関係連合講演会
Place of Presentation
早稲田大学(東京都)
Year and Date
2012-03-17
Related Report
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[Presentation] 混晶半導体バルク結晶の溶質輸送に対する重力効果(30分)2012
Author(s)
早川泰弘, Arivanandhan Mukannan, Rajesh Govindasamy, 小山忠信, 百瀬与志美, 森井久史, 青木徹, 田中昭, 岡野泰則, 高木洋平, 小澤哲夫, 阪田薫穂, 稲富裕光
Organizer
第59回応用物理学関係連合講演会
Place of Presentation
早稲田大学(東京都)
Year and Date
2012-03-15
Related Report
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[Presentation] Growth of homogeneous Si_<1-x>Ge_x and Mg_2Si<1-x>Ge_x for thermoelectric application2012
Author(s)
Hayakawa, M. Arivanandhan, M.Omprakash, T.Koyama, Y.Momose, H.Ikeda, A.Tanaka, H.Tatsuoka, A.Ishida, Y.Okano, Y.Inatomi, D.K.Aswal, S.Bhattacharya, D.Thangaraju, S.Moorthy Babu
Organizer
Int.Conf.Recent Trend in Adv.Materials
Place of Presentation
Vellore, India(招待講演)
Related Report
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[Presentation] X線その場観察実験と数値解析によるIn-Ga-Sb溶液中の溶質輸送機構の研究2011
Author(s)
Rajesh Govindasamy, Arivanandhan Mukannan, 鈴木那津輝, 森井久史, 青木徹, 小山忠信, 百瀬与志美, 田中昭, 高木洋平, 岡野泰則, 小澤哲夫, 稲富裕光, 早川泰弘
Organizer
第72回応用物理学会学術講演会
Place of Presentation
山形大学(山形県)
Year and Date
2011-09-01
Related Report
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[Presentation] Current state of alloy semiconductor crystal growth project under microgravity2011
Author(s)
Y.Inatomi, K.Sakata, Y.Hayakawa, A.Tanaka, T.Ozawa, Y.Okano, T.Ishikawa, M.Takayanagi, S.Yoda, Y.Yoshimura
Organizer
The 28th Int.Symp.Space Tech.Sci.(28th ISTS)
Place of Presentation
Okinawa, Japan
Related Report
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