Application of surface modified colloidal nano-dots for organic memory transistors
| Project/Area Number |
23510132
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Wakayama University |
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Principal Investigator |
TANAKA Ichiro 和歌山大学, システム工学部, 教授 (60294302)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | コロイダルナノドット / 配位子 / ペンタセン / 有機メモリトランジスタ / しきい値シフト / トンネル効果 / 有機薄膜トランジスタ / フローティングゲート / 有機メモリ素子 / エネルギー移動 / メモリ |
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| Research Abstract |
We found that the large threshold voltage shift in the transfer characteristics were obtained when semiconductor colloidal nano-dots were used as floating gates of pentacene memory transistors. With those memory transistors, it was confirmed that the minimum writing voltage of the memory effect was larger for smaller nano-dots. This result supports the model that the memory effect is caused by electrons which tunneled from the pentacene molecules into the nano-dots. Furthermore, based on the above-mentioned model, we improved the writing characteristics of the memory transistors by removing the organic ligand molecules of the nano-dots. As the result, the writing time has become ~1/3 of that for the memory transistors without removing the ligand molecules.
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Report
(4 results)
Research Products
(17 results)
