Semiconductor Materials for Infra-Red Region using Band-Gap Bowing.
| Project/Area Number |
23510133
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Kagawa University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | ナノ機能材料 / エピタキシャル成長 / III-V化合物半導体 / 窒化物半導体 / GaNAs / 室温発光 / 化合物半導体 / ヘテロ構造 / RF-MBE / Nitride / nano structure |
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| Research Abstract |
We have investigated the electrical and optical properties of p–i–n junction structures in which undoped GaNAs/GaAs multiple quantum wells (MQWs) were sandwiched by p- and n-doped GaAs layers. The samples were formed on the GaAs (001) substrates by plasma assisted molecular beam epitaxy (RF-MBE) using the modulated N radical beam method. We prepared several samples for various GaNAs MQW structures. The result of I-V characterization showed lower threshold voltages of GaNAs/GaAs p-i-n junctions. The photovoltaic effects were also observed under 1 SUN by solar simulator. The conversion efficiency was slightly improved by insertion of the GaNAs/GaAs MQWs, which was confirmed by photo current measurements. The electroluminescence (EL) measurements showed slightly different spectra to those of photoluminescence (PL) and the EL intensities were almost proportional to the applied currents. The room temperature EL measurement revealed strong electron confinement of GaNAs/GaAs MQW.
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Report
(4 results)
Research Products
(12 results)
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[Journal Article] Electroluminescence of GaNAs/GaAs MQWs p-i-n Junctions Grown by RF-MBE using Modulated Nitrogen Radical Beam Source2013
Author(s)
N. Ohta, K. Arimoto, M. Shiraga, K. Ishii, M. Inada, S. Yanai, Y. Nakai, H. Akiyama, T. Mochizuki, T. Takahashi, N. Takahashi, H. Miyagawa, N. Tsurumachi, S. Nakanishi, and S.Koshiba
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Journal Title
J. Cryst. Growth
Volume: (in press)
Pages: 150-153
DOI
Related Report
Peer Reviewed
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[Presentation] Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junctions2011
Author(s)
Kohei Arimoto; Masahiro Shiraga; Hideto Shirai; Shunsuke Takeda; Masato Ohmori; Hidefumi Akiyama; Toshimitu Mochizuki; Kenzo Yamaguchi; Hayato Miyagawa; Noriaki Tsurumachi; Shunsuke Nakanishi; Shyun Koshiba
Organizer
The 21st MRS-Japan Academic Symposium, Material Research Society of Japan (MRS-Japan)
Place of Presentation
Yokohama, Kanagawa (国内会議)
Related Report
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[Presentation] InGaNAs 系量子構造の光学特性評価2011
Author(s)
中森 章絵; 福村 博信; 矢内 俊輔; 白神 昌明; 戎 麻里; 宮川 勇人; 鶴町 徳昭; 中西 俊介; 小柴 俊
Organizer
応用物理学会中国四国支部・日本物理学会四国支部・物理教育学会中国支部 2011年度 学術講演会,応用物理学会,日本物理学会,物理教育学会
Place of Presentation
鳥取大学鳥取キャンパス (国内会議)
Related Report
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[Presentation] GaP 基板上におけるGaNAs/AlNAs 超格子の作製2011
Author(s)
矢内 俊輔; 中井 裕子; 伊藤寛; 宮川 勇人; 鶴町 徳昭; 中西 俊介; 高橋 尚志;高橋 敏男; 小柴 俊
Organizer
応用物理学会中国四国支部・日本物理学会四国支部・物理教育学会中国支部 2011年度 学術講演会,応用物理学会,日本物理学会、物理教育学会
Place of Presentation
鳥取大学鳥取キャンパス (国内会議)
Related Report
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