Semiconductor Materials for Infra-Red Region using Band-Gap Bowing.

• Project/Area Number: 23510133
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: Kagawa University
• Principal Investigator: KOSHIBA Shyun 香川大学, 工学部, 教授 (80314904)
• Project Period (FY): 2011 – 2013
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000); Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2011: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
• Keywords: ナノ機能材料 / エピタキシャル成長 / III-V化合物半導体 / 窒化物半導体 / GaNAs / 室温発光 / 化合物半導体 / ヘテロ構造 / RF-MBE / Nitride / nano structure

Research Abstract

We have investigated the electrical and optical properties of p–i–n junction structures in which undoped GaNAs/GaAs multiple quantum wells (MQWs) were sandwiched by p- and n-doped GaAs layers. The samples were formed on the GaAs (001) substrates by plasma assisted molecular beam epitaxy (RF-MBE) using the modulated N radical beam method. We prepared several samples for various GaNAs MQW structures. The result of I-V characterization showed lower threshold voltages of GaNAs/GaAs p-i-n junctions. The photovoltaic effects were also observed under 1 SUN by solar simulator. The conversion efficiency was slightly improved by insertion of the GaNAs/GaAs MQWs, which was confirmed by photo current measurements. The electroluminescence (EL) measurements showed slightly different spectra to those of photoluminescence (PL) and the EL intensities were almost proportional to the applied currents. The room temperature EL measurement revealed strong electron confinement of GaNAs/GaAs MQW.

Research Products

• [Journal Article] GaNAs/GaAs MQWs p-i-n junctions grown by RF-MBE using modulated nitrogen radical beam source (2013)
  • Author(s): N. Ohta; K. Arimoto; M. Shiraga; K. Ishii; M. Inada; S. Yanai; Y. Nakai; H. Akiyama; T. Mochizuki; N. Takahashi; H. Miyagawa; N. Tsurumachi; S. Nakanishi; S. Koshiba
  • Journal Title: J. Cryst. Growth Volume: 378 Pages: 150-153
  • Peer Reviewed
• [Journal Article] Electroluminescence of GaNAs/GaAs MQWs p-i-n Junctions Grown by RF-MBE using Modulated Nitrogen Radical Beam Source (2013)
  • Author(s): N. Ohta, K. Arimoto, M. Shiraga, K. Ishii, M. Inada, S. Yanai, Y. Nakai, H. Akiyama, T. Mochizuki, T. Takahashi, N. Takahashi, H. Miyagawa, N. Tsurumachi, S. Nakanishi, and S.Koshiba
  • Journal Title: J. Cryst. Growth Volume: (in press) Pages: 150-153
  • DOI: 10.1016/j.jcrysgro.2013.01.034
  • Peer Reviewed
• [Journal Article] Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junctions (2012)
  • Author(s): K. Arimoto; M. Shiraga; H. Shirai; S. Takeda; M. Ohmori; H. Akiyama; T. Mochizuki; K. Yamaguchi; H. Miyagawa; N. Tsurumachi; S. Nakanishi; S. Koshiba
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: 37, 2 Pages: 193-196
  • Peer Reviewed
• [Presentation] GaNAs/GaAs Nano Structures Grown by Modulated Nitrogen Beam Epitaxy and their Optical and Electrical Properties (2012)
  • Author(s): Shyun Koshiba
  • Organizer: BIT Congress Inc., 2nd Annual Nano-S&T-2012
  • Place of Presentation: Quingdao China (国内会議)
  • Invited
• [Presentation] Electroluminescence of GaNAs/GaAs MQWs p-i-n Junctions Grown by RF-MBE using Modulated Nitrogen Radical Beam Source (2012)
  • Author(s): Natsumi Ohta; Kohei Arimoto; Masahiro Shiraga; Kenta Ishii; Masatoshi Inada; Shunnsuke Yanai; Yuuko Nakai; Hidefumi Akiyama; Toshimitsu Mochizuki; Toshio Takahashi; Naoshi Takahashi; Hayato Miyagawa; Noriaki Tsurumachi; Shunsuke Nakanishi; Shyun Koshiba
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy-MBE2012 Material Research Society of Japan (MRS-Japan)
  • Place of Presentation: Nara (国内会議)
• [Presentation] Electroluminescence of GaNAs/GaAs MQWs p-i-n Junctions Grown by RF-MBE using Modulated Nitrogen Radical Beam Source (2012)
  • Author(s): N. Ohta; K. Arimoto; M. Shiraga; K. Ishii; M. Inada; S. Yanai; Y. Nakai; H. Akiyama; T. Mochizuki; T. Takahashi; N. Takahashi; H. Miyagawa; N. Tsurumachi; S. Nakanishi; S. Koshiba
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy-MBE2012
  • Place of Presentation: Nara, Japan
• [Presentation] GaNAs/GaAs Nano Structures Grown by Modulated Nitrogen Beam Epitaxy and their Optical and Electrical Properties (2012)
  • Author(s): S. Koshiba
  • Organizer: BIT Congress Inc., 2nd Annual Nano-S&T-2012, Nanoscience & Nanotechnology
  • Place of Presentation: Quingdao, China
  • Invited
• [Presentation] Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junctions (2011)
  • Author(s): Kohei Arimoto; Masahiro Shiraga; Hideto Shirai; Shunsuke Takeda; Masato Ohmori; Hidefumi Akiyama; Toshimitu Mochizuki; Kenzo Yamaguchi; Hayato Miyagawa; Noriaki Tsurumachi; Shunsuke Nakanishi; Shyun Koshiba
  • Organizer: The 21st MRS-Japan Academic Symposium, Material Research Society of Japan (MRS-Japan)
  • Place of Presentation: Yokohama, Kanagawa (国内会議)
• [Presentation] InGaNAs 系量子構造の光学特性評価 (2011)
  • Author(s): 中森 章絵; 福村 博信; 矢内 俊輔; 白神 昌明; 戎 麻里; 宮川 勇人; 鶴町 徳昭; 中西 俊介; 小柴 俊
  • Organizer: 応用物理学会中国四国支部・日本物理学会四国支部・物理教育学会中国支部 2011年度 学術講演会,応用物理学会,日本物理学会,物理教育学会
  • Place of Presentation: 鳥取大学鳥取キャンパス (国内会議)
• [Presentation] ドープしたGaAs/GaNAs ヘテロpn 接合の作製および電気特性評価 (2011)
  • Author(s): 有本 昂平; 戎 麻里; 矢内 俊輔; 福村 博信; 白井 英登; 中西 俊介; 鶴町 徳昭; 宮川 勇人; 小柴 俊
  • Organizer: 応用物理学会中国四国支部・日本物理学会四国支部・物理教育学会中国支部 2011年度学術講演会,応用物理学会,日本物理学会,物理教育学会
  • Place of Presentation: 鳥取大学鳥取キャンパス (国内会議)
• [Presentation] GaP 基板上におけるGaNAs/AlNAs 超格子の作製 (2011)
  • Author(s): 矢内 俊輔; 中井 裕子; 伊藤寛; 宮川 勇人; 鶴町 徳昭; 中西 俊介; 高橋 尚志;高橋 敏男; 小柴 俊
  • Organizer: 応用物理学会中国四国支部・日本物理学会四国支部・物理教育学会中国支部 2011年度 学術講演会,応用物理学会,日本物理学会、物理教育学会
  • Place of Presentation: 鳥取大学鳥取キャンパス (国内会議)
• [Presentation] Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junctions (2011)
  • Author(s): K, Arimoto; M. Shiraga; H. Shirai; S. Takeda; M. Ohmori; H. Akiyama; T. Mochizuki; K. Yamaguchi; H. Miyagawa; N. Tsurumachi; S. Nakanishi; S. Koshiba
  • Organizer: The 21st MRS-Japan Academic Symposium
  • Place of Presentation: 横浜