| Project/Area Number |
23510147
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tohoku University |
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Principal Investigator |
KUMASHIRO Ryotaro 東北大学, 原子分子材料科学高等研究機構, 助教 (00396417)
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| Co-Investigator(Kenkyū-buntansha) |
HEGURI Satoshi 東北大学, 原子分子材料科学高等研究機構, 助教 (70611648)
XU Jingtao 東北大学, 原子分子材料科学高等研究機構, 助手 (40571097)
LIU Fucai 東北大学, 原子分子材料科学高等研究機構, 助手 (60644797)
THANGAVEL Kanagasekaran 東北大学, 原子分子材料科学高等研究機構, 助手 (40644802)
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| Co-Investigator(Renkei-kenkyūsha) |
IKEDA Susumu 東北大学, 原子分子材料科学高等研究機構, 准教授 (20401234)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 有機半導体 / ナノ構造 / FET / 光共振器 / 有機単結晶 / レーザー発振 / 電子線リソグラフィー |
|---|
| Research Abstract |
From a study of the photoluminescence characteristics using novel organic semiconductor single crystal, material design guidelines based on the crystal structure and molecular shape is shown. On the basis of the metal-semiconductor interface state, we have succeeded in the development of FET shown a stable light emission operation in the atmosphere. Characterization method and conditions optimization of lithography technology were developed through the evaluation of physical properties of semiconductor single crystal.
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