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Theory of atom diffusion and structural stability of metal/semiconductor interfaces: from inorganic to organic systems

Research Project

Project/Area Number 23540361
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Condensed matter physics I
Research InstitutionChiba University

Principal Investigator

NAKAYAMA Takashi  千葉大学, 理学(系)研究科(研究院), 教授 (70189075)

Project Period (FY) 2011 – 2013
Project Status Completed (Fiscal Year 2013)
Budget Amount *help
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Keywords金属/半導体界面 / 第一原理計算 / 原子拡散 / 混晶化 / 構造安定性 / 界面欠陥 / 金属誘起ギャップ状態 / 有機半導体 / 金属/半導体界面 / 混晶過程 / 有機分子半導体 / 偏析界面層 / 電場下イオン化 / 界面制御 / 化合物化 / 有機分子固体 / 巨大歪環境 / 電場環境 / 金属クラスター / シリサイド / ショットキーバリア / イオン結合 / 共有結合
Research Abstract

Atom diffusion and structural stability of metal/inorganic and organic semiconductor interfaces have been studied by using the first-principles quantum mechanical calculations. This project has clarified what causes the atom diffusion, what is the important factor to classify the interface-atom mixing and the compound formation, and how the Schottky barrier changes by the interface defects. Based on these results, we constructed a new theory connecting the stability of interface and the origin of Schottky barrier formation.

Report

(4 results)
  • 2013 Annual Research Report   Final Research Report ( PDF )
  • 2012 Research-status Report
  • 2011 Research-status Report
  • Research Products

    (74 results)

All 2014 2013 2012 2011 Other

All Journal Article (16 results) (of which Peer Reviewed: 15 results) Presentation (49 results) (of which Invited: 1 results) Book (5 results) Remarks (4 results)

  • [Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014

    • Author(s)
      T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Issue: 5 Pages: 058006-058006

    • DOI

      10.7567/jjap.53.058006

    • NAID

      210000143765

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-Principles Study of Schottky Barrier Behavior at Fe3Si/Ge(111) Interfaces2014

    • Author(s)
      K. Kobinata, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Issue: 3 Pages: 035701-035701

    • DOI

      10.7567/jjap.53.035701

    • NAID

      210000143441

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-principles study of Pt-film stability on doped graphene sheets2014

    • Author(s)
      T. Park, Y. Tomita, T. Nakayama
    • Journal Title

      Surf. Sci.

      Volume: 621 Pages: 7-15

    • DOI

      10.1016/j.susc.2013.10.011

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-principles theoretical study of optical properties of oxygen-doped II-VI semiconductors2014

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Phys. Status Solidi C

      Volume: 印刷中 Issue: 7-8 Pages: 1229-1232

    • DOI

      10.1002/pssc.201300557

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014

    • Author(s)
      T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 印刷中

    • NAID

      210000143765

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] First-principles study of oxygen-doping states in II-VI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Physica Stat. Sol

      Volume: 10 Issue: 11 Pages: 1385-1388

    • DOI

      10.1002/pssc.201300249

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon2013

    • Author(s)
      M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
    • Journal Title

      J. Appl. Phys

      Volume: 114 Issue: 6

    • DOI

      10.1063/1.4817432

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach2013

    • Author(s)
      Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
    • Journal Title

      Materials 2013

      Volume: 6 Issue: 8 Pages: 3309-3361

    • DOI

      10.3390/ma6083309

    • Related Report
      2013 Annual Research Report 2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-principles Calculations of Metal-atom Diffusion in Oligoacene Molecular Semiconductor Systems2012

    • Author(s)
      Y. Tomita, T. Nakayama
    • Journal Title

      Organic Electr

      Volume: 13 Issue: 9 Pages: 1487-1498

    • DOI

      10.1016/j.orgel.2012.04.019

    • Related Report
      2013 Final Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Theoretical study of Si-based ionic switch2012

    • Author(s)
      T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Appl. Phys. Lett

      Volume: 100 Issue: 20

    • DOI

      10.1063/1.4718758

    • Related Report
      2013 Final Research Report 2012 Research-status Report
    • Peer Reviewed
  • [Journal Article] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study2012

    • Author(s)
      T. Nakayama
    • Journal Title

      Thin Solid Films

      Volume: 520 Pages: 3374-3378

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] Optical Response Spectra of Surfaces and Interfaces2011

    • Author(s)
      T. Nakayama, K. Kobinata
    • Journal Title

      Journal of the Vacuum Society of Japan

      Volume: 54 Issue: 10 Pages: 529-536

    • DOI

      10.3131/jvsj2.54.529

    • NAID

      130002116993

    • ISSN
      1882-2398, 1882-4749
    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] N-doping induced band-gap reduction in III-V semiconductors : First-principles calculations2011

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Phys. Stat. Sol. C

      Volume: 8 Pages: 352-355

    • Related Report
      2013 Final Research Report
  • [Journal Article] Optical Response Spectra of Surfaces and Interfaces2011

    • Author(s)
      T. Nakayama
    • Journal Title

      J. Vac.Soc.Jpn

      Volume: 54 Issue: 8 Pages: 529-536

    • DOI

      10.1016/j.tsf.2011.10.091

    • NAID

      10029840009

    • Related Report
      2013 Final Research Report
    • Peer Reviewed
  • [Journal Article] N-doping induced band-gap reduction in III-V semiconductors: First-principles calculations2011

    • Author(s)
      M. Ishikawa
    • Journal Title

      Phys. Status Solidi C

      Volume: 8 Issue: 2 Pages: 352-355

    • DOI

      10.1002/pssc.201000578

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Journal Article] 表面界面の光学応答スペクトル2011

    • Author(s)
      中山隆史
    • Journal Title

      真空

      Volume: 54 Pages: 529-536

    • NAID

      10029840009

    • Related Report
      2011 Research-status Report
    • Peer Reviewed
  • [Presentation] 第一原理計算によるSn/Ge界面の構造とSBH変調の関係2014

    • Author(s)
      小日向恭祐, 中山隆史
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大
    • Related Report
      2013 Annual Research Report
  • [Presentation] 第一原理計算によるII-VI族化合物半導体の酸素ドープの光学特性の解析2014

    • Author(s)
      石川真人、中山隆史
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大
    • Related Report
      2013 Annual Research Report
  • [Presentation] 金属/半導体界面における拡散過程の理論検討2014

    • Author(s)
      平松智記, 中山隆史
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大
    • Related Report
      2013 Annual Research Report
  • [Presentation] Physics of Interface Segregation; What Determine Schottky Barrier at Metal/Semiconductor Interfaces ?2013

    • Author(s)
      T. Nakayama
    • Organizer
      2013 JSAP-MRS (Japan-USA) Joint Symposia
    • Place of Presentation
      Kyoto Japan
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
  • [Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013

    • Author(s)
      T. Nakayama, K. Sato
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A
    • Related Report
      2013 Final Research Report
  • [Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013

    • Author(s)
      Y. Tomita, T. Park, T. Nakayama
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A
    • Related Report
      2013 Final Research Report
  • [Presentation] Quantum processes of Exciton dissociation at Organic Semiconductor Interfaces2013

    • Author(s)
      K. Sato, T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Fukuoka Japan
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
  • [Presentation] Firstprinciples study of oxygen-doping states in IIVI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      40th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Kobe Japan
    • Related Report
      2013 Final Research Report
  • [Presentation] Firstprinciples study of oxygen-doping electric optical states in II-VI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    • Place of Presentation
      Matsue, Japan
    • Related Report
      2013 Final Research Report
  • [Presentation] FirstPrinciples Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      16th Int. Conf. II-VII Compound and Related Materials
    • Place of Presentation
      Nagahama, Japan
    • Related Report
      2013 Final Research Report
  • [Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013

    • Author(s)
      T. Nakayama and K. Sato
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A.
    • Related Report
      2013 Annual Research Report
  • [Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013

    • Author(s)
      Y. Tomita, T. Park, and T. Nakayama
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A.
    • Related Report
      2013 Annual Research Report
  • [Presentation] First-principles study of oxygen-doping states in II VI semiconductors2013

    • Author(s)
      M. Ishikawa and T. Nakayama
    • Organizer
      ISCS 2013 - 40th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Kobe Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] First-principles study of oxygen-doping electric optical states2013

    • Author(s)
      M. Ishikawa and T. Nakayama
    • Organizer
      18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    • Place of Presentation
      Matsue, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] First-Principles Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013

    • Author(s)
      M. Ishikawa and T. Nakayama
    • Organizer
      16th Int. Conf. II-VI Compound and Related Materials (II-VI 2013)
    • Place of Presentation
      Nagahama, Japan
    • Related Report
      2013 Annual Research Report
  • [Presentation] 3サイト分子架橋系におけるループ電流の過渡特性に関する理論研究2013

    • Author(s)
      飯塚秀行,中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Related Report
      2013 Annual Research Report
  • [Presentation] 界面における電子正孔対の解離シミュレーション2013

    • Author(s)
      佐藤紅介、中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Related Report
      2013 Annual Research Report
  • [Presentation] 自己組織化単分子膜における金属原子の拡散2013

    • Author(s)
      吉田一行、中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Related Report
      2013 Annual Research Report
  • [Presentation] 分子架橋系における分子-電極接合の幾何と過渡電流2013

    • Author(s)
      佃真吾, 中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Related Report
      2013 Annual Research Report
  • [Presentation] 第一原理計算によるFe3Si/Geにおける界面構造とSBH変調の関係2013

    • Author(s)
      小日向恭祐
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 界面における電子正孔対の解離シミュレーション2013

    • Author(s)
      佐藤紅介
    • Organizer
      日本物理学会
    • Place of Presentation
      広島大学
    • Related Report
      2012 Research-status Report
  • [Presentation] First-principles Study of Atomic Impurity States in Organic Semiconductors : Their Chemical Classification2012

    • Author(s)
      Y. Tomita, T. Nakayama, S. Okada
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Related Report
      2013 Final Research Report
  • [Presentation] Disorderinduced Schottky-barrier Changes at Metal/Semiconductor Interfaces; Firstprinciples Calculations2012

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Related Report
      2013 Final Research Report
  • [Presentation] Dopingenhanced Stability of Catalytic Pt Ultrathin Films on Graphene Sheet : First-principles Calculations2012

    • Author(s)
      T. Park, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond
    • Place of Presentation
      Zurich Switzerland
    • Related Report
      2013 Final Research Report
  • [Presentation] Oxygendoping-induced Band-gap Reduction in II-VI Semiconductors; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Related Report
      2013 Final Research Report
  • [Presentation] Firstprinciples study of band-gap reduction of II-VI semiconductors by Oxygen dopings; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      17th Int. Conf. Superlattices, Nanostructures, Nanodevices
    • Place of Presentation
      Dresden Germany
    • Related Report
      2013 Final Research Report
  • [Presentation] Chemical Trend of Atomic Impurity States in Organic Semiconductor Films; Theoretical Investigation2012

    • Author(s)
      Y. Tomita
    • Organizer
      The 2012 International Conference on Solid State Devices and Materials (SSDM2012)
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2012 Research-status Report
  • [Presentation] First-principles Study of Atomic Impurity States in Organic Semiconductors: Their Chemical Classification2012

    • Author(s)
      Y. Tomita
    • Organizer
      The 31st International Conference on the Physics of Semiconductors (ICPS2012)
    • Place of Presentation
      Zurich, Switzerland
    • Related Report
      2012 Research-status Report
  • [Presentation] Disorder-induced Schottky-barrier Changes at Metal/Semiconductor Interfaces; First-principles Calculations2012

    • Author(s)
      K. Kobinata
    • Organizer
      The 31st International Conference on the Physics of Semiconductors (ICPS2012)
    • Place of Presentation
      Zurich, Switzerland
    • Related Report
      2012 Research-status Report
  • [Presentation] Oxygen-doping-induced Band-gap Reduction in II-VI Semiconductors; Comparison to III-V Systems2012

    • Author(s)
      M.Ishikawa
    • Organizer
      The 31st International Conference on the Physics of Semiconductors (ICPS2012)
    • Place of Presentation
      Zurich, Switzerland
    • Related Report
      2012 Research-status Report
  • [Presentation] Doping-enhanced Stability of Catalytic Pt Ultrathin Films on Graphene Sheet : First-principles Calculations2012

    • Author(s)
      T.Park
    • Organizer
      The 31st International Conference on the Physics of Semiconductors (ICPS2012)
    • Place of Presentation
      Zurich, Switzerland
    • Related Report
      2012 Research-status Report
  • [Presentation] First-principles study of band-gap reduction of II-VI semiconductors by Oxygen dopings; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa
    • Organizer
      the 17th International Conference of Superlattices, Nanostructures and Nanodevices (ICSNN 2012)
    • Place of Presentation
      Dresden,Germany
    • Related Report
      2012 Research-status Report
  • [Presentation] 金属/有機分子界面における金属拡散2012

    • Author(s)
      吉田一行
    • Organizer
      第32回表面科学学術講演会
    • Place of Presentation
      東北大学
    • Related Report
      2012 Research-status Report
  • [Presentation] 第一原理計算による金属/Si界面の乱れとSBH変調の関係2012

    • Author(s)
      小日向恭祐
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Research-status Report
  • [Presentation] Schottkybarrier change by structural disorders at metal/Si interfaces2011

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      Simulation of Semiconductor Processes and Devices (SISPAD)
    • Place of Presentation
      Osaka Japan
    • Year and Date
      2011-09-10
    • Related Report
      2013 Final Research Report
  • [Presentation] Physics of Schottkybarrier change by segregation and structural disorder at metal/Si interfaces : First-principles study2011

    • Author(s)
      T. Nakayama
    • Organizer
      ICSI-72011 (7th Int. Conf. Si Epitaxy and Heterostructures)
    • Place of Presentation
      Leuven Belgium
    • Related Report
      2013 Final Research Report
    • Invited
  • [Presentation] How and why loop currents are generated in molecular bridge systems : density-matrix calculation of time evolustion2011

    • Author(s)
      T. Nakayama, H. Iizuka, G. Anagama, Y. Tomita
    • Organizer
      ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
    • Place of Presentation
      Maui USA
    • Related Report
      2013 Final Research Report
  • [Presentation] Firstprinciples study of metal-atom diffusion in graphene and organic solids : intrinsic difference from inorganic systems2011

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
    • Place of Presentation
      Maui USA
    • Related Report
      2013 Final Research Report
  • [Presentation] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study2011

    • Author(s)
      T. Nakayama
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures(招待講演)
    • Place of Presentation
      Leuven, Belgium
    • Related Report
      2011 Research-status Report
  • [Presentation] Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study2011

    • Author(s)
      K. Kobinata
    • Organizer
      Simulation of Semiconductor Processes and Devices (SISPAD)
    • Place of Presentation
      Osaka, Japan
    • Related Report
      2011 Research-status Report
  • [Presentation] How and why loop currents are generated in molecular bridge systems: density-matrix calculation of time evolustion2011

    • Author(s)
      T. Nakayama
    • Organizer
      International Symposium on Advanced Nanostructures and Nano-Devices
    • Place of Presentation
      Maui, USA
    • Related Report
      2011 Research-status Report
  • [Presentation] First-principles study of metal-atom diffusion in graphene and organic solids: intrinsic difference from inorganic systems2011

    • Author(s)
      Y. Tomita
    • Organizer
      International Symposium on Advanced Nanostructures and Nano-Devices
    • Place of Presentation
      Maui, USA
    • Related Report
      2011 Research-status Report
  • [Presentation] Enhanced Stability of Catalytic Pt Ultrathin Films on Doped Graphene Sheets: First-principles Study2011

    • Author(s)
      T. Park
    • Organizer
      6th International Symposium on Surface Science (ISSS-6)
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2011 Research-status Report
  • [Presentation] How and Why Loop Currents Are Generated in Molecular Bridge Systems: Density-Matrix Calculation of Time Evolution2011

    • Author(s)
      H. Iizuka
    • Organizer
      6th International Symposium on Surface Science (ISSS-6)
    • Place of Presentation
      Tokyo, Japan
    • Related Report
      2011 Research-status Report
  • [Presentation] 3サイト分子架橋系におけるループ電流の過渡特性2011

    • Author(s)
      飯塚秀行
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学
    • Related Report
      2011 Research-status Report
  • [Presentation] Stability and Schottky Barrier of Spin-polarized Fe3Si/Ge Interfaces; First-Principles Study

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      8th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-8)
    • Place of Presentation
      Fukuoka, Japan
    • Related Report
      2013 Annual Research Report 2013 Final Research Report
  • [Presentation] Chemical Trend of Atomic Impurity States in Organic Semiconductor Films; Theoretical Investigation

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      2012 Int. Conf. on Solid State Devices and Materials (SSDM2012)
    • Place of Presentation
      Kyoto Japan
    • Related Report
      2013 Final Research Report
  • [Presentation] Enhanced Stability of Catalytic Pt Ultrathin Films on Doped Graphene Sheets : Firstprinciples Study

    • Author(s)
      T. Park, T. Nakayama
    • Organizer
      6th Int. Symp. Surface Science (ISSS-6)
    • Place of Presentation
      Tokyo Japan
    • Related Report
      2013 Final Research Report
  • [Presentation] How and Why Loop Currents Are Generated in Molecular Bridge Systems : Density-Matrix Calculation of Time Evolution

    • Author(s)
      H. Iizuka, T. Nakayama, G. Anagama
    • Organizer
      6th Int. Symp. Surface Science(ISSS-6)
    • Place of Presentation
      Tokyo Japan
    • Related Report
      2013 Final Research Report
  • [Book] "計算科学に基づく半導体ナノ界面構造と電子物性の評価", 「ポストシリコン半導体-ナノ成膜ダイナミックスと基板・界面効果」4編1章2節2013

    • Author(s)
      中山隆史, 小日向恭祐
    • Publisher
      (株)NTS出版
    • Related Report
      2013 Final Research Report
  • [Book] ポストシリコン半導体 --ナノ成膜ダイナミクスと基板・界面効果-- 第4編1章2節2013

    • Author(s)
      中山隆史、小日向恭祐
    • Total Pages
      10
    • Publisher
      NTS出版
    • Related Report
      2013 Annual Research Report
  • [Book] 次世代結晶性半導体におけるナノ成膜ダイナミックスと界面量子効果2013

    • Author(s)
      中山隆史
    • Publisher
      (株)NTS出版
    • Related Report
      2012 Research-status Report
  • [Book] "Atomic Structures and Electronic Properties of Semiconductor Interfaces", in "Comprehensive Semiconductor Science and Technology", Eds. Mahajan, Kamimura, and Bhattacharya2011

    • Author(s)
      T. Nakayama, Y. Kangawa, K. Shiraishi
    • Publisher
      Elsevier B.V.
    • Related Report
      2013 Final Research Report
  • [Book] Comprehensive Semiconductor Science and Technology2011

    • Author(s)
      T. Nakayama
    • Publisher
      Elsevier B.V., Amsterdam
    • Related Report
      2011 Research-status Report
  • [Remarks]

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2013 Final Research Report
  • [Remarks] Nakayama Lab's Homepage(中山研究室HP)

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2013 Annual Research Report
  • [Remarks] Nakayama Lab's Homepage

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2012 Research-status Report
  • [Remarks]

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2011 Research-status Report

URL: 

Published: 2011-08-05   Modified: 2020-05-15  

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