| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Outline of Final Research Achievements |
Purpose of this work was to clarify distance distributions between trapped electrons and holes which are going to emit recombination luminescence, by using advanced pulse EPR method. Selecting an appropriate system of doped semiconductor, aluminum doped titanium oxide crystal, modulation signals due to spin dipole interaction between electron and hole were successfully observed at the temperature below 40 K. This is a remarkable observation for a semiconductor. From the analysis of the signal, the modulation was better fitted by a function assuming spin interactions in the distance range of 2~4 nm. This means that spins of electron and hole trapped in an individual crystal unit cell interact over 8~9 unit cells before recombination.
|
