| Project/Area Number |
23540383
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | High Energy Accelerator Research Organization |
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Principal Investigator |
HIRANO Keiichi 大学共同利用機関法人高エネルギー加速器研究機構, 物質構造科学研究所, 准教授 (40218798)
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| Co-Investigator(Kenkyū-buntansha) |
SUGIYAMA Hiroshi 高エネルギー加速器研究機構, 物質構造科学研究所, 助教 (80222058)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | X線光学 / X線多波回折 / X線検光子 / X線トポグラフィー / 偏光 / 検光子 / X線 / 多波回折 / Ｘ線 |
|---|
| Research Abstract |
In materials research using synchrotron x-rays, x-ray polarization analyzer is quite useful for the investigations of strongly correlated systems and magnetism. However, the conventional x-ray analyzer has two disadvantages: 1) the available wavelength is limited and 2) it is insensitive to the helicity of the photons. In order to solve these problems, we have developed and improved the x-ray MBD analyzer which makes use of x-ray-multiple-diffraction by a crystal. Further, we have developed polarization-controlled glancing-angle x-ray topography and observed defects and strain fields located in the surface layer of an epitaxial 4H-SiC wafer.
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