| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Research Abstract |
Photocarrier injection to transition metal oxide thin films and the electronic states of the films are investigated. We have observed an insulator-to-metal transition of VO2 thin films induced by soft X-ray irradiation. Electron carriers are injected into the V 3d band upon soft-X ray irradiation. We propose a simple model where the transition is driven by desorption of oxygen from the films. The Fermi surface topology of a metallic VO2 thin film is studied by angle-resolved photoemission spectroscopy (ARPES) and the nesting vector is found to be present. Near topmost layer of CrO2 thin films are revealed to be metallic by surface sensitive PES. Also, a single-phase TaO2 thin film and spinodally decomposed (V,Ti)O2 thin film are developed.
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